Patents by Inventor Nicolas Chimot

Nicolas Chimot has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10164406
    Abstract: A tunable laser device comprises a multi-section distributed feedback (DFB) laser having a first Bragg section including a waveguide and a Bragg grating, a second Bragg section comprising a waveguide and a Bragg grating, and a phase section being longitudinally located between the first Bragg section and the second Bragg section. The phase section is made of a passive material, and each Bragg section has a first longitudinal end joining the phase section and a second longitudinal end opposed to the phase section. The Bragg grating of at least one Bragg section has a grating coupling coefficient which decreases from the first longitudinal end to the second longitudinal end of the at least one Bragg section.
    Type: Grant
    Filed: February 4, 2015
    Date of Patent: December 25, 2018
    Assignee: ALCATEL LUCENT
    Inventors: Nicolas Chimot, Helene Debregeas-Sillard
  • Patent number: 9929535
    Abstract: An emitting device is intended for delivering photons with a chosen wavelength. This emitting device includes an InP substrate with a directly modulated laser arranged for generating photons modulated by a non-return-to-zero modulation to produce data to be transmitted, a passive ring resonator monolithically integrated with the directly modulated laser and having a resonance amongst several ones that is used for filtering a zero level induced by the data modulation, and a tuning means arranged along the directly modulated laser and/or around the ring resonator to tune the photon wavelength and/or the ring resonator resonance used for filtering.
    Type: Grant
    Filed: April 15, 2015
    Date of Patent: March 27, 2018
    Assignee: Alcatel Lucent
    Inventors: Nicolas Chimot, Francois Lelarge, Siddharth Joshi
  • Publication number: 20170170631
    Abstract: A tunable laser device comprises a multi-section distributed feedback (DFB) laser having a first Bragg section including a waveguide and a Bragg grating, a second Bragg section comprising a waveguide and a Bragg grating, and a phase section being longitudinally located between the first Bragg section and the second Bragg section. The phase section is made of a passive material, and each Bragg section has a first longitudinal end joining the phase section and a second longitudinal end opposed to the phase section. The Bragg grating of at least one Bragg section has a grating coupling coefficient which decreases from the first longitudinal end to the second longitudinal end of the at least one Bragg section.
    Type: Application
    Filed: February 4, 2015
    Publication date: June 15, 2017
    Inventors: Nicolas CHIMOT, Helene DEBRAGEAS-SIL-LARD
  • Publication number: 20170040773
    Abstract: An emitting device (1) is intended for delivering photons with a chosen wavelength. This emitting device (1) comprises an InP substrate (2) with a directly modulated laser (3) arranged for generating photons modulated by a non-return-to-zero modulation to produce data to be transmitted, a passive ring resonator (4) monolithically integrated with the directly modulated laser (3) and having a resonance amongst several ones that is used for filtering a zero level induced by the data modulation, and a tuning means (5) arranged along the directly modulated laser (3) and/or around the ring resonator (4) to tune the photon wavelength and/or the ring resonator resonance used for filtering.
    Type: Application
    Filed: April 15, 2015
    Publication date: February 9, 2017
    Inventors: Nicolas CHIMOT, Francois LEARGE, Siddharth JOSHI
  • Patent number: 9502659
    Abstract: A nanotube-based flexible field effect transistor and its method of manufacture is provided. The field effect transistor according to the invention comprises at least two contact electrodes, respectively drain and source electrodes, an electrical conduction zone connected to the contact electrodes, said zone comprising a plurality of single-wall carbon nanotubes that are substantially aligned, a gate electrode for controlling the electric current circulating in said zone and a flexible substrate on which the contact and gate electrodes are deposited. The nanotube density in the conduction zone is strictly greater than 10 nanotubes per micrometer.
    Type: Grant
    Filed: August 16, 2007
    Date of Patent: November 22, 2016
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE
    Inventors: Jean-Philippe Bourgoin, Marcelo Goffman, Vincent Derycke, Nicolas Chimot
  • Patent number: 9395596
    Abstract: An optical filtering device (1) comprising: a ring resonator (2); and a multimode interference coupler (3) comprising two inputs (4, 7), two outputs (5, 8) and a multimode waveguide (9) connecting the two inputs to the two outputs, the coupler having a first input (4) serving as an input for the filtering device and able to receive an input optical signal (10), and a first output (5) corresponding to the output of the filtering device and able to produce an output optical signal (12), the ring resonator (2) being arranged so as to connect a second output (8) of the coupler to a second input (7) of the coupler, wherein the filtering device comprises a tuning element (6) able to modify locally the refractive index in the coupling zone (11) of said multimode waveguide (9) in order to vary a coupling coefficient between the coupler (3) and the ring resonator (2).
    Type: Grant
    Filed: March 18, 2014
    Date of Patent: July 19, 2016
    Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
    Inventors: Nicolas Chimot, Francois Lelarge
  • Publication number: 20160161824
    Abstract: An optical filtering device (1) comprising: a ring resonator (2); and a multimode interference coupler (3) comprising two inputs (4, 7), two outputs (5, 8) and a multimode waveguide (9) connecting the two inputs to the two outputs, the coupler having a first input (4) serving as an input for the filtering device and able to receive an input optical signal (10), and a first output (5) corresponding to the output of the filtering device and able to produce an output optical signal (12), the ring resonator (2) being arranged so as to connect a second output (8) of the coupler to a second input (7) of the coupler, wherein the filtering device comprises a tuning element (6) able to modify locally the refractive index in the coupling zone (11) of said multimode waveguide (9) in order to vary a coupling coefficient between the coupler (3) and the ring resonator (2).
    Type: Application
    Filed: March 18, 2014
    Publication date: June 9, 2016
    Applicant: Commissariat a I'Engerie Atomique et aux Energies Alternatives
    Inventors: Nicolas CHIMOT, Francois LELARGE
  • Patent number: 9197325
    Abstract: An optical transceiver (1) comprises: a ring resonator (6), a first waveguide (2) comprising, in succession, an input-output section (22), a coupling section (20) coupled to a first portion of the ring resonator and an amplification section (21) coupled to a first optical reflector (4) suitable for reflecting light toward the coupling section, a second waveguide (5) comprising, in succession, a reception section (52), a coupling section (50) coupled to a second portion of the ring resonator and a reflection section coupled to a second optical reflector (4) suitable for reflecting light toward the coupling section, a gain medium (7) arranged in the amplification section of the first waveguide and suitable for producing a stimulated light transmission, and an optical detector (8) coupled to the reception section of the second waveguide.
    Type: Grant
    Filed: February 28, 2014
    Date of Patent: November 24, 2015
    Assignee: Alcatel Lucent and Commissariat A L'Energie Atomique Et Aux Energies Alternatives
    Inventors: Romain Brenot, Nicolas Chimot
  • Patent number: 9160143
    Abstract: A wavelength tunable laser emission device (1) comprises: a first waveguide (31) comprising an optical amplification means for producing a stimulated light emission, the first waveguide extending in a longitudinal direction of the emission device, a second waveguide (5) made of silicon on silicon dioxide and disposed parallel to the first waveguide spaced from the first waveguide in a vertical direction of the emission device so as to allow the existence of a hybrid optical mode coupled at one and the same time to the second waveguide and to the first waveguide, the second waveguide comprising a distributed reflector (9) along the second waveguide, the second waveguide comprising transverse zones (11, 12, 13, 14) doped differently so as to form a polar junction oriented in a transverse direction of the emission device. Electrodes (15, 16) coupled to the doped transverse zones modify an effective index seen by the hybrid optical mode.
    Type: Grant
    Filed: June 4, 2014
    Date of Patent: October 13, 2015
    Assignees: Commissariat a l'Engerie Atomique et aux Energies Alternatives, Alcatel Lucent
    Inventors: Helen Debregeas-Sillard, Badhise B. Bakir, Guang-Hua Duan, Nicolas Chimot
  • Publication number: 20140369700
    Abstract: A wavelength tunable laser emission device (1) comprises: a first waveguide (31) comprising an optical amplification means for producing a stimulated light emission, the first waveguide extending in a longitudinal direction of the emission device, a second waveguide (5) made of silicon on silicon dioxide and disposed parallel to the first waveguide spaced from the first waveguide in a vertical direction of the emission device so as to allow the existence of a hybrid optical mode coupled at one and the same time to the second waveguide and to the first waveguide, the second waveguide comprising a distributed reflector (9) along the second waveguide, the second waveguide comprising transverse zones (11, 12, 13, 14) doped differently so as to form a polar junction oriented in a transverse direction of the emission device. Electrodes (15, 16) coupled to the doped transverse zones modify an effective index seen by the hybrid optical mode.
    Type: Application
    Filed: June 4, 2014
    Publication date: December 18, 2014
    Inventors: Hélèn DEBREGEAS-SILLARD, Badhise Ben BAKIR, Guang-Hua DUAN, Nicolas CHIMOT
  • Publication number: 20140328590
    Abstract: An optical transceiver (1) comprises: a ring resonator (6), a first waveguide (2) comprising, in succession, an input-output section (22), a coupling section (20) coupled to a first portion of the ring resonator and an amplification section (21) coupled to a first optical reflector (4) suitable for reflecting light toward the coupling section, a second waveguide (5) comprising, in succession, a reception section (52), a coupling section (50) coupled to a second portion of the ring resonator and a reflection section coupled to a second optical reflector (4) suitable for reflecting light toward the coupling section, a gain medium (7) arranged in the amplification section of the first waveguide and suitable for producing a stimulated light transmission, and an optical detector (8) coupled to the reception section of the second waveguide.
    Type: Application
    Filed: February 28, 2014
    Publication date: November 6, 2014
    Applicant: Commissariat a I'Energie Atomique et aux Energies Alternatives
    Inventors: ROMAIN BRENOT, NICOLAS CHIMOT
  • Publication number: 20080296563
    Abstract: A nanotube-based flexible field effect transistor and its method of manufacture is provided. The field effect transistor according to the invention comprises at least two contact electrodes, respectively drain and source electrodes, an electrical conduction zone connected to the contact electrodes, said zone comprising a plurality of single-wall carbon nanotubes that are substantially aligned, a gate electrode for controlling the electric current circulating in said zone and a flexible substrate on which the contact and gate electrodes are deposited. The nanotube density in the conduction zone is strictly greater than 10 nanotubes per micrometer.
    Type: Application
    Filed: August 16, 2007
    Publication date: December 4, 2008
    Applicant: Commissariat a l'energie atomique
    Inventors: Jean-Philippe Bourgoin, Marcelo Goffman, Vincent Derycke, Nicolas Chimot