Abstract: A substrate to fabricate a photodiode structure has a top layer made from cadmium-doped semiconductor material. A first HgCdTe-base layer is formed by liquid phase epitaxy from the top layer with a bath containing an n-type electrically active dopant to electrically dope the first layer. The cadmium diffuses from the top layer to the first layer to form a decreasing cadmium concentration gradient from the interface with the top layer in a direction away from the interface. The cadmium concentration gradient causes a decreasing band gap width gradient in the first layer from the interface and causes an n-type dopant concentration gradient in the first layer from the interface.

Abstract: A detection device includes an absorbent first stack configured to absorb an electromagnetic radiation in at least a first wavelength range and presenting a first thermal expansion coefficient. It also includes a second stack forming an optical function and presenting a second thermal expansion coefficient. The first thermal expansion coefficient is different from the second thermal expansion coefficient and the detection device further includes a buffer layer separating the first stack and the second stack. The buffer layer presents a thickness included between 0.5 ?m and 50 ?m so as to absorb the mechanical stresses induced by the first stack.

Abstract: The detection device includes first and second photodetectors each sensitive to two different wavelength ranges. The detection device comprises a first filter configured to allow the first wavelength range to pass and to block the second wavelength range. The first filter covers the first photodetector and leaves the second photodetector uncovered. The detection device comprises a second filter located at a distance from the first and second photodetectors and at a distance from the first filter. The second filter is configured to allow the first and the second wavelength ranges to pass. A processing circuit is configured to receive electric signals coming from the first and second photodetectors and to provide data relative to the radiation of the second wavelength range by comparing the first signal with the second signal.

Abstract: A detection device includes an absorbent first stack configured to absorb an electromagnetic radiation in at least a first wavelength range and presenting a first thermal expansion coefficient. It also includes a second stack forming an optical function and presenting a second thermal expansion coefficient. The first thermal expansion coefficient is different from the second thermal expansion coefficient and the detection device further includes a buffer layer separating the first stack and the second stack. The buffer layer presents a thickness included between 0.5 ?m and 50 ?m so as to absorb the mechanical stresses induced by the first stack.

Abstract: The photodetector includes a photon absorbing region formed by a first semiconductor material having a first bandgap energy value. It also includes a blocking region formed by at least second and third semiconductor materials configured to prevent the majority charge carriers from passing between the photon absorbing region and a contact region, the second semiconductor material presenting a second bandgap energy value higher than the first bandgap energy value to form a quantum well with the third semiconductor material. The blocking region is doped.

Abstract: The detection device includes first and second photodetectors each sensitive to two different wavelength ranges. The detection device comprises a first filter configured to allow the first wavelength range to pass and to block the second wavelength range. The first filter covers the first photodetector and leaves the second photodetector uncovered. The detection device comprises a second filter located at a distance from the first and second photodetectors and at a distance from the first filter. The second filter is configured to allow the first and the second wavelength ranges to pass. A processing circuit is configured to receive electric signals coming from the first and second photodetectors and to provide data relative to the radiation of the second wavelength range by comparing the first signal with the second signal.

Abstract: The photodetector includes a photon absorbing region formed by a first semiconductor material having a first bandgap energy value. It also includes a blocking region formed by at least second and third semiconductor materials configured to prevent the majority charge carriers from passing between the photon absorbing region and a contact region, the second semiconductor material presenting a second bandgap energy value higher than the first bandgap energy value to form a quantum well with the third semiconductor material. The blocking region is doped.

Abstract: A method of positioning elements or additional technological levels on the incident surface of an infrared detector of hybridized type, said detector being formed of a detection circuit comprising an array network of photosensitive sites for the wavelength ranges of interest, hybridized on a read circuit, said detection circuit resulting from the epitaxial growth of a detection material on a substrate, comprising forming within the detection circuit indexing patterns by marking of the growth substrate.

Abstract: A method of positioning elements or additional technological levels (1) on the incident surface of an infrared detector of hybridized type, said detector being formed of a detection circuit (1, 10) comprising an array network of photosensitive sites (2) for the wavelength ranges of interest, hybridized on a read circuit (4), said detection circuit resulting from the epitaxial growth of a detection material on a substrate, comprising forming within the detection circuit (1, 10) indexing patterns (7, 14) by marking of the growth substrate.