Abstract: A process for removal of photoresist present on a polymer dielectric on a semiconductor substrate and for removal of photoresist residues on the inside walls of microvias formed in the dielectric layer. The process is conducted by generating a plasma in a plasma generator from a gas comprising one or more fluorine compound containing etchant gases and etching the substrate having a dielectric layer thereon, and a photoresist layer on the dielectric layer and on the inside walls of microvias formed in the dielectric layer. The etching is conducted at a temperature of from about 0° C. to about 90° C. and at a pressure of from about 10 torr or less, to thereby remove the photoresist present on the dielectric layer and on the inside walls of the microvias.