Abstract: A memory device that dynamically adjusts the sense time to read an open block of a memory block is disclosed. The adjusted sense time is based upon various considerations, including the sense time of the closed block equivalent and the openness of the open block. This allows the memory device to maintain a fixed Vt as well as reduce failed bit count, i.e., read errors due to an insufficient sense time. Also, the dynamic adjustment of sense time can optimize system performance and increase efficiency.

Abstract: The memory device that includes a memory block memory cells arranged in word lines. A controller is in electrical communication with the memory cells and is configured to program the memory cells to a first set of data states in a first programming pass and then to a greater second set of data states in a second programming pass. During programming of a first set of memory cells in at least one of the first and second programming passes, the controller is further configured to determine programming statuses of a second set of memory cells that is adjacent the first set of memory cells. The controller is further configured to read the first set of memory cells using a read voltage that is adjusted from a base read voltage based on the determined programming statuses of the second set of memory cells.

Abstract: The present disclosure is a composite phase change material and its method of preparation thereof. The composite phase change material includes a phase change material present in an amount of 50%-80% by weight. The composite phase change material further includes a thermally conductive material present in an amount of 10%-30% by weight. The composite phase change material further includes a flame retardant present in an amount of 0%-10% by weight. The composite phase change material further includes a polymer present in an amount of 0%-15% by weight.

Abstract: A memory device that dynamically adjusts the sense time to read an open block of a memory block is disclosed. The adjusted sense time is based upon various considerations, including the sense time of the closed block equivalent and the openness of the open block. This allows the memory device to maintain a fixed Vt as well as reduce failed bit count, i.e., read errors due to an insufficient sense time. Also, the dynamic adjustment of sense time can optimize system performance and increase efficiency.

Abstract: The present invention relates to a Reinforced Form Stable Phase Change Material (RFSPCM) and product thereof. Reinforcement with chemically treated fibers, of polymer in Phase Change Material (PCM) matrix gives a uniform blend of a stable form. This Reinforced Form Stable Phase Change Material (RFSPCM) according to present invention is nontoxic in nature, flexible, has high latent heat and high tensile or tearing strength both above and below the melting point of Phase Change Material (PCM). Further, the composition is so stable that it can easily be heated and cooled without leaking out its Phase Change Material (PCM). The present invention provides a simple Phase Change Material (PCM) product for user for providing stored heat that has improved safety and handling ability.