Patents by Inventor Niels GEYPEN
Niels GEYPEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230040124Abstract: Disclosed is a method of metrology. The method comprises illuminating a radiation onto a substrate; obtaining measurement data relating to at least one measurement of each of one or more structures on the substrate; using a Fourier-related transform to transform the measurement data into a transformed measurement data; and extracting a feature of the substrate from the transformed measurement data, or eliminating an impact of a nuisance parameter.Type: ApplicationFiled: November 27, 2020Publication date: February 9, 2023Applicant: ASML Netherlands B.V.Inventors: Han-Kwang NIENHUYS, Teis Johan COENEN, Sander Bas ROOBOL, Jeroen COTTAAR, Seyed Iman MOSSAVAT, Niels GEYPEN, Sandy Claudia SCHOLZ, Christina Lynn PORTER
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Patent number: 10816906Abstract: Disclosed is a method of performing a measurement in an inspection apparatus, and an associated inspection apparatus and HHG source. The method comprises configuring one or more controllable characteristics of at least one driving laser pulse of a high harmonic generation radiation source to control the output emission spectrum of illumination radiation provided by the high harmonic generation radiation source; and illuminating a target structure with said illuminating radiation. The method may comprise configuring the driving laser pulse so that the output emission spectrum comprises a plurality of discrete harmonic peaks. Alternatively the method may comprise using a plurality of driving laser pulses of different wavelengths such that the output emission spectrum is substantially monochromatic.Type: GrantFiled: January 23, 2019Date of Patent: October 27, 2020Assignee: ASML Netherlands B.V.Inventors: Nan Lin, Arie Jeffrey Den Boef, Sander Bas Roobol, Simon Gijsbert Josephus Mathijssen, Niels Geypen
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Patent number: 10725386Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.Type: GrantFiled: May 24, 2019Date of Patent: July 28, 2020Assignee: ASML Netherlands B.V.Inventors: Scott Anderson Middlebrooks, Niels Geypen, Hendrik Jan Hidde Smilde, Alexander Straaijer, Maurits Van Der Schaar, Markus Gerardus Martinus Maria Van Kraaij
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Patent number: 10670974Abstract: A metrology apparatus for determining a characteristic of interest of a structure on a substrate, the structure having diffractive properties, the apparatus comprising: focusing optics configured to focus illumination radiation comprising a plurality of wavelengths onto the structure; a first detector configured to detect at least part of the illumination radiation which has been diffracted from the structure; and additional optics configured to produce, on at least a portion of the first detector, a wavelength-dependent spatial distribution of different wavelengths of the illumination radiation which has been diffracted from the structure, wherein the first detector is arranged to detect at least a non-zero diffraction order of the illumination radiation which has been diffracted from the structure.Type: GrantFiled: December 27, 2018Date of Patent: June 2, 2020Assignee: ASML Netherlands B.V.Inventors: Gerrit Jacobus Hendrik Brussaard, Petrus Wilhelmus Smorenburg, Teis Johan Coenen, Niels Geypen, Peter Danny Van Voorst, Sander Bas Roobol
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Publication number: 20190278190Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.Type: ApplicationFiled: May 24, 2019Publication date: September 12, 2019Applicant: ASML Netherlands B.V.Inventors: Scott Anderson MIDDLEBROOKS, Niels GEYPEN, Hendrik Jan Hidde SMILDE, Alexander STRAAIJER, Maurits VAN DER SCHAAR, Markus Gerardus Martinus Maria VAN KRAAIJ
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Patent number: 10401739Abstract: A method of aligning a pair of complementary diffraction patterns having a first complementary diffraction pattern and a second complementary diffraction pattern, the pair of complementary diffraction patterns obtained from performance of a metrology process on a structure formed by a lithographic process. The method includes performing at least a fine alignment stage to align the pair of complementary diffraction patterns. The alignment stage includes: interpolating measured values of the first complementary diffraction pattern over at least a portion of a detector area; and minimizing a residual between measured values in the second complementary diffraction pattern and corresponding interpolated values from the interpolation of the first complementary diffraction pattern, by one or both of translation and rotation of the second complementary diffraction pattern.Type: GrantFiled: September 7, 2018Date of Patent: September 3, 2019Assignee: ASML Netherlands B.V.Inventor: Niels Geypen
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Publication number: 20190204757Abstract: A metrology apparatus for determining a characteristic of interest of a structure on a substrate, the structure having diffractive properties, the apparatus comprising: focusing optics configured to focus illumination radiation comprising a plurality of wavelengths onto the structure; a first detector configured to detect at least part of the illumination radiation which has been diffracted from the structure; and additional optics configured to produce, on at least a portion of the first detector, a wavelength-dependent spatial distribution of different wavelengths of the illumination radiation which has been diffracted from the structure, wherein the first detector is arranged to detect at least a non-zero diffraction order of the illumination radiation which has been diffracted from the structure.Type: ApplicationFiled: December 27, 2018Publication date: July 4, 2019Applicant: ASML Netherlands B.V.Inventors: Gerrit Jacobus Hendrik BRUSSAARD, Petrus Wilhelmus Smorenburg, Teis Johan Coenen, Niels Geypen, Peter Danny Van Voorst, Sander Bas Roobol
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Patent number: 10331041Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.Type: GrantFiled: October 15, 2018Date of Patent: June 25, 2019Assignee: ASML Netherlands B.V.Inventors: Scott Anderson Middlebrooks, Niels Geypen, Hendrik Jan Hidde Smilde, Alexander Straaijer, Maurits Van Der Schaar, Markus Gerardus Martinus Maria Van Kraaij
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Publication number: 20190155171Abstract: Disclosed is a method of performing a measurement in an inspection apparatus; and an associated inspection apparatus and HHG source. The method comprises configuring one or more controllable characteristics of at least one driving laser pulse of a high harmonic generation radiation source to control the output emission spectrum of illumination radiation provided by the high harmonic generation radiation source; and illuminating a target structure with said illuminating radiation. The method may comprise configuring the driving laser pulse so that the output emission spectrum comprises a plurality of discrete harmonic peaks. Alternatively the method may comprise using a plurality of driving laser pulses of different wavelengths such that the output emission spectrum is substantially monochromatic.Type: ApplicationFiled: January 23, 2019Publication date: May 23, 2019Applicant: ASML Netherlands B.V.Inventors: Nan LIN, Arie Jeffrey Den Boeff, Sander Bas Roobol, Simon Gijsbert Josephus Mathijssen, Niels Geypen
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Patent number: 10234771Abstract: Disclosed is a method of performing a measurement in an inspection apparatus, and an associated inspection apparatus and HHG source. The method comprises configuring one or more controllable characteristics of at least one driving laser pulse of a high harmonic generation radiation source to control the output emission spectrum of illumination radiation provided by the high harmonic generation radiation source; and illuminating a target structure with said illuminating radiation. The method may comprise configuring the driving laser pulse so that the output emission spectrum comprises a plurality of discrete harmonic peaks. Alternatively the method may comprise using a plurality of driving laser pulses of different wavelengths such that the output emission spectrum is substantially monochromatic.Type: GrantFiled: April 14, 2017Date of Patent: March 19, 2019Assignee: ASML Netherlands B.VInventors: Nan Lin, Arie Jeffrey Den Boef, Sander Bas Roobol, Simon Gijsbert Josephus Mathijssen, Niels Geypen
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Publication number: 20190079410Abstract: A method of aligning a pair of complementary diffraction patterns having a first complementary diffraction pattern and a second complementary diffraction pattern, the pair of complementary diffraction patterns obtained from performance of a metrology process on a structure formed by a lithographic process. The method includes performing at least a fine alignment stage to align the pair of complementary diffraction patterns. The alignment stage includes: interpolating measured values of the first complementary diffraction pattern over at least a portion of a detector area; and minimizing a residual between measured values in the second complementary diffraction pattern and corresponding interpolated values from the interpolation of the first complementary diffraction pattern, by one or both of translation and rotation of the second complementary diffraction pattern.Type: ApplicationFiled: September 7, 2018Publication date: March 14, 2019Applicant: ASML NETHERLANDS B.V.Inventor: Niels Geypen
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Publication number: 20190049860Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.Type: ApplicationFiled: October 15, 2018Publication date: February 14, 2019Applicant: ASML Netherlands B.V.Inventors: Scott Anderson MIDDLEBROOKS, Niels GEYPEN, Hendrik Jan Hidde SMILDE, Alexander STRAAIJER, Maurits VAN DER SCHAAR, Markus Gerardus Martinus Maria VAN KRAAIJ
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Patent number: 10126662Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.Type: GrantFiled: March 5, 2018Date of Patent: November 13, 2018Assignee: ASML Netherlands B.V.Inventors: Scott Anderson Middlebrooks, Niels Geypen, Hendrik Jan Hidde Smilde, Alexander Straaijer, Maurits Van Der Schaar, Markus Gerardus Martinus Maria Van Kraaij
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Publication number: 20180196357Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.Type: ApplicationFiled: March 5, 2018Publication date: July 12, 2018Applicant: ASML Netherlands B.V.Inventors: Scott Anderson Middlebrooks, Niels Geypen, Hendrik Jan Hidde Smilde, Alexander Straaijer, Maurits Van Der Schaar, Markus Gerardus Martinus Maria Van Kraaij
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Patent number: 9910366Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.Type: GrantFiled: July 18, 2014Date of Patent: March 6, 2018Assignee: ASML Netherlands B.V.Inventors: Scott Anderson Middlebrooks, Niels Geypen, Hendrik Jan Hidde Smilde, Alexander Straaijer, Maurits Van Der Schaar, Markus Gerardus Martinus Maria Van Kraaij
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Publication number: 20170315456Abstract: Disclosed is a method of performing a measurement in an inspection apparatus, and an associated inspection apparatus and HHG source. The method comprises configuring one or more controllable characteristics of at least one driving laser pulse of a high harmonic generation radiation source to control the output emission spectrum of illumination radiation provided by the high harmonic generation radiation source; and illuminating a target structure with said illuminating radiation. The method may comprise configuring the driving laser pulse so that the output emission spectrum comprises a plurality of discrete harmonic peaks. Alternatively the method may comprise using a plurality of driving laser pulses of different wavelengths such that the output emission spectrum is substantially monochromatic.Type: ApplicationFiled: April 14, 2017Publication date: November 2, 2017Applicant: ASML Netherlands B.V.Inventors: Nan LIN, Arie Jeffrey DEN BOEF, Sander Bas ROOBOL, Simon Gijsbert Josephus MATHIJSSEN, Niels GEYPEN
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Publication number: 20160161864Abstract: Disclosed is a method of measuring a parameter of a litho-graphic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.Type: ApplicationFiled: July 18, 2014Publication date: June 9, 2016Applicant: ASML Netherlands B.V.Inventors: Scott Anderson MIDDLEBROOKS, Niels GEYPEN, Hendrik Jan Hidde SMILDE, Alexander STRAAIJER, Maurits VAN DER SCHAAR, Markus Gerardus Martinus Maria VAN KRAAIJ