Abstract: A method for making an integrated circuit device by: forming a plurality of transistors on a semiconductor substrate; forming multilayer interconnects by depositing a layer of metal; patterning the metal layer; depositing a first dielectric material, depositing a second dielectric material, patterning the first and second dielectric materials; and depositing a via filling metal material into the patterned areas; or, alternatively, by forming transistors on a substrate; depositing one of an electrically insulating or electrically conducting material; patterning said one of an electrically insulating or electrically conducting material; and depositing the other of the electrically insulating or electrically conducting material, so as to form a layer over said transistors having both electrically insulating and electrically conducting portions; wherein the first dielectric material, which is an organosiloxane material, and the electrically insulating material each has a carbon to silicon ratio of 1.

Abstract: An integrated circuit device is provided having a substrate and areas of electrically insulating and electrically conductive material, where the electrically insulating material is a hybrid organic-inorganic material that requires no or minimal CMP and which can withstand subsequent processing steps at temperatures of 450° C. or more.

Abstract: A thin film comprising a composition obtained by polymerizing a monomer having the formula I: wherein: R1 is a hydrolysable group, R2 is a polarizability reducing organic group, and R3 is a bridging hydrocarbon group, to form a siloxane material. The invention also concerns methods for producing the thin films. The thin film can be used a low k dielectric in integrated circuit devices. The novel dielectric materials have excellent properties of planarization resulting in good local and global planarity on top a semiconductor substrate topography, which reduces or eliminates the need for chemical mechanical planarization after dielectric and oxide liner deposition.

Abstract: Silica dielectric films, whether nanoporous foamed silica dielectrics or nonporous silica dielectrics are readily damaged by fabrication methods and reagents that reduce or remove hydrophobic properties from the dielectric surface. The invention provides for methods of imparting hydrophobic properties to such damaged silica dielectric films present on a substrate. The invention also provides plasma-based methods for imparting hydrophobicity to both new and damaged silica dielectric films. Semiconductor devices prepared by the inventive processes are also provided.

Abstract: Low dielectric materials are described herein that comprise a plurality of pores or nanopores in addition to the ultrananopores. It is further contemplated that the low dielectric materials described herein will have a dielectric constant of less than about 3. The dielectric materials are fromed from polymer compositions, wherein the polymer compositions comprise a plurality of monomers and wherein at least one monomer comprises a radical precursor bonded to a structural precursor. Further, methods of forming dielectric materials from polymer compositions are presented. The figure shows the chemical structure for a methyl/t-butyl Low organic Content/Low Organic Siloxane Polymer.

Abstract: The present invention relates to thin films suitable as dielectrics in integrated circuits and for other similar applications and to methods for the production thereof. In particular, the invention concerns thin films comprising at least partially cross-linked siloxane structures obtainable by hydrolysis of one or more silicon compounds of the general formula R1—R2—Si—(X1)3, wherein X1 is a leaving group, R2 is a cycloalkyl having from 3 to 16 carbon atoms, an aryl having from 5 to 18 carbon atoms or a polycyclic alkyl group having from 7 to 16 carbon atoms, and R1 is a substituent of R2 selected from alkyl groups having from 1 to 4 carbon atoms, alkenyl groups having from 2 to 5 carbon atoms, alkynyl groups having from 2 to 5 carbon atoms, and aromatic groups having 5 or 6 carbon atoms, each of said groups being optionally substituted, and Cl and F.

Abstract: Silica dielectric films, whether nanoporous foamed silica dielectrics or nonporous silica dielectrics are readily damaged by fabrication methods and reagents that reduce or remove hydrophobic properties from the dielectric surface. The invention provides for methods of imparting hydrophobic properties to such damaged silica dielectric films present on a substrate. The invention also provides plasma-based methods for imparting hydrophobicity to both new and damaged silica dielectric films. Semiconductor devices prepared by the inventive processes are also provided.

Abstract: A thin film comprising a composition obtained by polymerizing a monomer having the formula I: wherein: R1 is a hydrolysable group, R2 is a polarizability reducing organic group, and R3 is a bridging hydrocarbon group, to form a siloxane material. The invention also concerns methods for producing the thin films. The thin film can be used a low k dielectric in integrated circuit devices. The novel dielectric materials have excellent properties of planarization resulting in good local and global planarity on top a semiconductor substrate topography, which reduces or eliminates the need for chemical mechanical planarization after dielectric and oxide liner deposition.

Abstract: Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic light-absorbing compounds incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, and 193 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining one or more organic absorbing compounds with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.

Abstract: A colloidal suspension of nanoparticles composed of a dense material dispersed in a solvent is used in forming a gap-filling dielectric material with low thermal shrinkage. The dielectric material is particularly useful for pre-metal dielectric and shallow trench isolation applications. According to the methods of forming a dielectric material, the colloidal suspension is deposited on a substrate and dried to form a porous intermediate layer. The intermediate layer is modified by infiltration with a liquid phase matrix material, such as a spin-on polymer, followed by curing, by infiltration with a gas phase matrix material, followed by curing, or by curing alone, to provide a gap-filling, thermally stable, etch resistant dielectric material.

Abstract: Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic light-absorbing compounds incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, and 193 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining one or more organic absorbing compounds with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.

Abstract: There is provided an array of fluoro-substituted silsesquioxane thin film precursors having a structure wherein fluoro groups are bonded to the silicon atoms of a silsesquioxane cage. In a first aspect, the present invention provides a composition comprising a vaporized material having the formula [F—SiO1.5]x[H—SiO1.5]y, wherein x+y=n, n is an integer between 2 and 30, x is an integer between 1 and n and y is a whole number between 0 and n. Also provided are films made from these precursors and objects comprising these films.

Abstract: A method of forming a low dielectric constant structure. The method comprises providing at a first temperature a dielectric material having a first dielectric constant and a first elastic modulus, and curing the dielectric material by a thermal curing process, in which the material is heated to a second temperature by increasing the temperature at an average rate of at least 1° C. per second. As a result a densified, dielectric material is obtained which has a low dielectric constant.

Abstract: An integrated circuit device is provided having a substrate and areas of electrically insulating and electrically conductive material, where the electrically insulating material is a hybrid organic-inorganic material that requires no or minimal CMP and which can withstand subsequent processing steps at temperatures of 450° C. or more.

Abstract: Novel processes for preparing hydridosiloxane and organohydridosiloxane resins are disclosed. The processes of the invention broadly provide for the steps of contacting a silane monomer with a phase transfer catalyst in the presence of a reaction mixture that includes a nonpolar, e.g., hydrocarbon, solvent, and a polar solvent, e.g., alcohol and water. The process is conducted under conditions effective to catalytically convert said silane monomer into hydridosiloxane and organohydridosiloxane resins. Recovery of the products is advantageously aided by the ease of separating the phase transfer catalyst from the dual phase reaction mixture by separating the immiscible polar solvent carrying the catalyst from the nonpolar solvent that carries the product. Hydridosiloxane and organohydridosiloxane resins produced by the processes of the invention are also provided.

Abstract: Anti-reflective coating materials for ultraviolet photolithography include at least one organic light-absorbing compound incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining at least one organic absorbing compound with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.

Abstract: A colloidal suspension of nanoparticles composed of a dense material dispersed in a solvent is used in forming a gap-filling dielectric material with low thermal shrinkage. The dielectric material is particularly useful for pre-metal dielectric and shallow trench isolation applications. According to the methods of forming a dielectric material, the colloidal suspension is deposited on a substrate and dried to form a porous intermediate layer. The intermediate layer is modified by infiltration with a liquid phase matrix material, such as a spin-on polymer, followed by curing, by infiltration with a gas phase matrix material, followed by curing, or by curing alone, to provide a gap-filling, thermally stable, etch resistant dielectric material.

Abstract: A process for forming a planarization film on a substrate that does not smoke or fume on heating includes applying a polymeric solution including a novolac resin having a weight average molecular weight between about 1000 and 3000 amu, which has been fractionated to remove molecules with molecular weight below about 350 amu, a surfactant selected from a group consisting of a non-fluorinated hydrocarbon, a fluorinated hydrocarbon and combinations thereof, and an optional organic solvent to a substrate, followed by heating the substrate.

Abstract: A process for forming a planarization film on a substrate that does not smoke or fume on heating includes applying a polymeric solution including a novolac resin having a weight average molecular weight between about 1000 and 3000 amu, which has been fractionated to remove molecules with molecular weight below about 350 amu, a surfactant selected from a group consisting of a non-fluorinated hydrocarbon, a fluorinated hydrocarbon and combinations thereof, and an optional organic solvent to a substrate, followed by heating the substrate.

Abstract: A colloidal suspension of nanoparticles composed of a dense material dispersed in a solvent is used in forming a gap-filling dielectric material with low thermal shrinkage. The dielectric material is particularly useful for pre-metal dielectric and shallow trench isolation applications. According to the methods of forming a dielectric material, the colloidal suspension is deposited on a substrate and dried to form a porous intermediate layer. The intermediate layer is modified by infiltration with a liquid phase matrix material, such as a spin-on polymer, followed by curing, by infiltration with a gas phase matrix material, followed by curing, or by curing alone, to provide a gap-filling, thermally stable, etch resistant dielectric material.