Patents by Inventor Niharika Thakuria

Niharika Thakuria has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Non-volatile polarization induced strain coupled 2D FET memory
    Patent number: 11296224
    Abstract: A polarization induced strain coupled two dimensional field effect transistor (PoSt FET) memory cell is disclosed which includes a transistor including a source contact, a drain contact, a gate contact, a back contact, a channel disposed atop the gate contact, wherein the channel and the gate are separated by an electrically insulating material, and a piezoelectric (PE)/ferroelectric(FE) (PE/FE) layer disposed between the gate contact and the back contact and configured to store bit information in form of ferroelectric polarization (P), wherein a ratio of cross-sectional area of the channel to cross-sectional area of the PE/FE layer is between about 0.03 to about 0.07.
    Type: Grant
    Filed: June 16, 2021
    Date of Patent: April 5, 2022
    Assignee: Purdue Research Foundation
    Inventors: Niharika Thakuria, Sumeet Kumar Gupta