Abstract: A semiconductor structure includes a source/drain region; a frontside source/drain contact disposed on the source/drain region, a via-to-backside power rail disposed on the frontside source/drain contact and on a portion of the source/drain region, and a backside power rail connected to the via-to-backside power rail.

Abstract: A dental alloy that comprises little or no amounts of noble metals. The alloys herein are designed to be a substitute for gold alloys in the fabrication of prosthetic dental appliances employing porcelain to metal bonds. The alloys are based on a combination of iron and chromium with a lesser inclusion of other elements to provide a high yield strength and to provide a durable impact resistant bond with dental porcelain.

Abstract: A thermochemical process is disclosed that readily produces significantly roughened surfaces on densely sintered alumina. The alumina is reacted with cryolite (Na3AlF6) at a temperature of 300° C.-2075° C. for a time sufficient to produce the desired degree of roughness. This treatment causes controlled dissolution of alumina, controlled cavitation of grain boundaries, and formation of a thin film-reaction product. The resulting surface irregularities enhance subsequent micromechanical or chemical bonding of the densely sintered alumina component. The resulting roughened alumina components have numerous uses in the dental restorative and orthodontic fields, including orthodontic brackets, crowns, onlays, inlays, veneers, and the like. The technique is readily adapted to be used in either a dental office or a laboratory environment.