Abstract: The dynamic range of a pixel is increased by using selective photosensor resets during a frame time of image capture at a timing depending on the light intensity that the pixel will be exposed to during the frame time. Pixels that will be exposed to high light intensity are reset later in the frame than pixels that will be exposed to lower light intensity.

Abstract: In one implementation, an event sensor includes a plurality of pixels, an external readout line shared among the plurality of pixels, and an external processing circuit. Each pixel is configured to output pixel data indicative of an intensity of incident illumination. The external processing circuit is configured to output a stream of pixel events. Each respective pixel event is generated when a comparator of the external processing circuit obtains a sample of pixel data from a particular pixel via the external readout line that breaches a threshold value.

Abstract: The dynamic range of a pixel is increased by using selective photosensor resets during a frame time of image capture at a timing depending on the light intensity that the pixel will be exposed to during the frame time. Pixels that will be exposed to high light intensity are reset later in the frame than pixels that will be exposed to lower light intensity.

Abstract: The dynamic range of a pixel is increased by using selective photosensor resets during a frame time of image capture at a timing depending on the light intensity that the pixel will be exposed to during the frame time. Pixels that will be exposed to high light intensity are reset later in the frame than pixels that will be exposed to lower light intensity.

Abstract: A pulse-width modulation (PWM) image sensor is described herein. The PWM image sensor may have a stacked configuration. A top wafer of the PWM image sensor may have a charge-to-time converter and a logic wafer, stacked with the top wafer, may include a time-to-digital converter. The PWM image sensor may utilize variable transfer functions to avoid highlight compression and may utilize non-linear time quantization. A threshold voltage, as input to a charge-to-time converter, may additionally be controlled to affect light detection, dynamic range, and other features associated with the PWM image sensor.

Abstract: Various implementations disclosed herein include devices, systems, and methods that buffer events in device memory during synchronous readout of a plurality of frames by a sensor. Various implementations disclosed herein include devices, systems, and methods that disable a sensor communication link until the buffered events are sufficient for transmission by the sensor. In some implementations, the sensor using a synchronous readout may select a readout mode for one or more frames based on how many of the pixels are detecting events. In some implementations, a first mode that reads out only data for a low percentage of pixels that have events uses the device memory and a second mode bypasses the device memory based on accumulation criteria such as high percentage of pixels detecting events. In the second mode, less data per pixel may be readout.

Abstract: Various implementations disclosed herein include devices, systems, and methods that determine a control signal before synchronous readout of a frame (or part of the frame) is performed by a sensor. Various implementations disclosed herein include devices, systems, and methods that determine event density (e.g., a dense row signal or a dense frame signal) before synchronous readout is performed by the sensor. In some implementations, the event camera is capable of operating in a first readout mode and a second readout mode based on a number of events. In the second readout mode, less data per pixel may be readout.

Abstract: The dynamic range of a pixel is increased by using selective photosensor resets during a frame time of image capture at a timing depending on the light intensity that the pixel will be exposed to during the frame time. Pixels that will be exposed to high light intensity are reset later in the frame than pixels that will be exposed to lower light intensity.

Abstract: Various implementations disclosed herein include devices, systems, and methods implemented by an electronic device with an imaging sensor including a plurality of pixels (e.g., a matrix of pixels) that each are capable of detecting illumination intensity or contrast change using at least one shared photosensor. In some implementations, the imaging sensor is capable of operating in a first illumination intensity detecting mode (e.g., in a frame-based camera mode) or in a second contrast change detecting mode (e.g., in an event camera mode). In some implementations, the first illumination intensity detecting mode and the second contrast change detecting mode are mutually exclusive. In some implementations, pixels at an imaging sensor include two transfer transistors (e.g., gates) where a first transfer transistor allows intensity detection, and a second transfer transistor allows contrast change detection.

Abstract: In one implementation, an event sensor includes a plurality of pixels, an external readout line shared among the plurality of pixels, and an external processing circuit. Each pixel is configured to output pixel data indicative of an intensity of incident illumination. The external processing circuit is configured to output a stream of pixel events. Each respective pixel event is generated when a comparator of the external processing circuit obtains a sample of pixel data from a particular pixel via the external readout line that breaches a threshold value.

Abstract: Imaging apparatus (100, 200) includes a photosensitive medium (302) configured to convert incident photons into charge carriers. A bias electrode (304) overlies the photosensitive medium and applies a bias potential to the photosensitive medium. One or more pixel circuits (306) are formed on a semiconductor substrate. Each pixel circuit defines a respective pixel (300) and includes first and second pixel electrodes (316, 318) coupled to collect the charge carriers from the photosensitive medium at respective first and second locations, and first and second transfer gates (326, 328) in respective proximity to the first and second pixel electrodes. Circuitry (700) is coupled to apply different, respective first and second potentials to the first and second transfer gates and to vary the first and second potentials so as to control relative proportions of the charge carriers that are collected by the first and second electrodes.

Abstract: The dynamic range of a pixel is increased by using selective photosensor resets during a frame time of image capture at a timing depending on the light intensity that the pixel will be exposed to during the frame time. Pixels that will be exposed to high light intensity are reset later in the frame than pixels that will be exposed to lower light intensity.

Abstract: The dynamic range of a pixel is increased by using selective photosensor resets during a frame time of image capture at a timing depending on the light intensity that the pixel will be exposed to during the frame time. Pixels that will be exposed to high light intensity are reset later in the frame than pixels that will be exposed to lower light intensity.

Abstract: Imaging apparatus (100, 200, 300) includes a photosensitive medium (302) configured to convert incident photons into pairs of electrons and holes. An array of pixel circuits (304) is formed on a semiconductor substrate (305). Each pixel circuit defines a respective pixel and includes an electron-collecting electrode (306, 502) in contact with the photosensitive medium at a first location in the pixel and a hole-collecting electrode (308, 504) in contact with the photosensitive medium at a second location in the pixel. Circuitry (800, 1000) is coupled to apply a positive potential to and collect the electrons from the electron-collecting electrode and to apply a negative potential to and collect the holes from the hole-collecting electrode and to output a signal indicative of an intensity of the incident photons responsively to the collected electrons and holes.

Abstract: Imaging apparatus includes a photosensitive medium, which is configured to convert incident photons into charge carriers. An array of three-transistor (3T) pixel circuits, coupled to the photosensitive medium, is arranged in rows and columns on a semiconductor substrate and collects the charge carriers from the photosensitive medium. A readout circuitry includes a plurality of column readout lines; each column readout line is coupled to respective outputs of the pixel circuits in a corresponding column of the array and includes a current source load coupled between a constant-voltage supply and the outputs of the pixel circuits, and a bypass switch in parallel with the current source load. Control circuitry alternately opens the bypass switch on each column readout line during a signal readout phase and closes the bypass switch during a pixel reset phase.

Abstract: Imaging apparatus (100, 200) includes a photosensitive medium (302) configured to convert incident photons into charge carriers. A bias electrode (304) overlies the photosensitive medium and applies a bias potential to the photosensitive medium. One or more pixel circuits (306) are formed on a semiconductor substrate. Each pixel circuit defines a respective pixel (300) and includes first and second pixel electrodes (316, 318) coupled to collect the charge carriers from the photosensitive medium at respective first and second locations, and first and second transfer gates (326, 328) in respective proximity to the first and second pixel electrodes. Circuitry (700) is coupled to apply different, respective first and second potentials to the first and second transfer gates and to vary the first and second potentials so as to control relative proportions of the charge carriers that are collected by the first and second electrodes.

Abstract: Imaging apparatus (100, 200, 300) includes a photosensitive medium (302) configured to convert incident photons into pairs of electrons and holes. An array of pixel circuits (304) is formed on a semiconductor substrate (305). Each pixel circuit defines a respective pixel and includes an electron-collecting electrode (306, 502) in contact with the photosensitive medium at a first location in the pixel and a hole-collecting electrode (308, 504) in contact with the photosensitive medium at a second location in the pixel. Circuitry (800, 1000) is coupled to apply a positive potential to and collect the electrons from the electron-collecting electrode and to apply a negative potential to and collect the holes from the hole-collecting electrode and to output a signal indicative of an intensity of the incident photons responsively to the collected electrons and holes.

Abstract: The dynamic range of a pixel is increased by using selective photosensor resets during a frame time of image capture at a timing depending on the light intensity that the pixel will be exposed to during the frame time. Pixels that will be exposed to high light intensity are reset later in the frame than pixels that will be exposed to lower light intensity.

Abstract: The dynamic range of a pixel is increased by using selective photosensor resets during a frame time of image capture at a timing depending on the light intensity that the pixel will be exposed to during the frame time. Pixels that will be exposed to high light intensity are reset later in the frame than pixels that will be exposed to lower light intensity.

Abstract: The dynamic range of a pixel is increased by using selective photosensor resets during a frame time of image capture at a timing depending on the light intensity that the pixel will be exposed to during the frame time. Pixels that will be exposed to high light intensity are reset later in the frame than pixels that will be exposed to lower light intensity.