Abstract: In accordance with an embodiment, a method of testing an integrated circuit, includes receiving a supply voltage on the integrated circuit via a first input pin, providing power to circuits disposed on the integrated circuit via the first input pin, comparing the supply voltage to an internally generated voltage, generating a digital output value based on the comparing, and applying the digital output value to a pin of the integrated circuit.

Abstract: In accordance with an embodiment, a circuit includes: a replica input transistor, a first replica cascode transistor, an active current source, and an active cascode biasing circuit. The active current source is configured to set a current flowing through the first replica cascode transistor and the replica input transistor to a predetermined value by adjusting a voltage of a control node of the replica input transistor; and an active cascode biasing circuit including a first output coupled to the control node of the first replica cascode transistor, and the active cascode biasing circuit configured to set a drain voltage of the replica input transistor to a predetermined voltage by adjusting a voltage of the control node of the first replica cascode transistor.

Abstract: In accordance with an embodiment, a circuit includes: a replica input transistor, a first replica cascode transistor, an active current source, and an active cascode biasing circuit. The active current source is configured to set a current flowing through the first replica cascode transistor and the replica input transistor to a predetermined value by adjusting a voltage of a control node of the replica input transistor; and an active cascode biasing circuit including a first output coupled to the control node of the first replica cascode transistor, and the active cascode biasing circuit configured to set a drain voltage of the replica input transistor to a predetermined voltage by adjusting a voltage of the control node of the first replica cascode transistor.

Abstract: A MEMS sensor device includes an electrically conductive membrane and an electrically conductive closed loop structure. The closed loop structure is arranged in proximity to the membrane and is configured to reduce eddy currents in the membrane.

Abstract: A semiconductor device including an electrical conductive sensor structure connected to a sensor circuit. At least a part of the electrical conductive sensor structure is located below a pad of the semiconductor device. Further, the sensor circuit is configured to detect a value or a change of a value of an electrical parameter associated with the electrical conductive sensor structure indicating a crack within proximity of the pad.

Abstract: A MEMS sensor device includes an electrically conductive membrane and an electrically conductive closed loop structure. The closed loop structure is arranged in proximity to the membrane and is configured to reduce eddy currents in the membrane.

Abstract: In accordance with an embodiment, a method of operating a directional coupler includes determining a coupled power variation by applying an input signal at an input port of the directional coupler, applying a first impedance at a transmitted port of the directional coupler, measuring a first coupled power at a coupled port of the directional coupler after applying the first impedance, applying a second impedance at the transmitted port of the directional coupler, measuring a second coupled power after applying the second impedance, and determining a difference between the first coupled power and the second coupled power to form the coupled power variation.

Abstract: A circuit includes a switching element with a first terminal, a second terminal and a control terminal. The circuit also includes an impedance network coupled between the control terminal and a switching node. The circuit also includes a first accelerating element coupled between the control terminal and a first node. The first node is different from the switching node. The circuit is configured to temporarily activate the first accelerating element when a switching state of the switching element is to be changed.

Abstract: In accordance with an embodiment, a circuit includes a first directional coupler comprising a first input port, a first transmitted port, a first isolated port and a first coupled port, where the first directional coupler disposed on a first substrate. The circuit also includes a first direction select switch having a first switch input port coupled to the first isolated port, a second switch input port coupled to the first coupled port, and a first switch output port, where the first direction select switch is disposed on the first substrate along with the directional coupler.

Abstract: A semiconductor device including an electrical conductive sensor structure connected to a sensor circuit. At least a part of the electrical conductive sensor structure is located below a pad of the semiconductor device. Further, the sensor circuit is configured to detect a value or a change of a value of an electrical parameter associated with the electrical conductive sensor structure indicating a crack within proximity of the pad.

Abstract: In accordance with an embodiment, a circuit includes a low noise amplifier transistor disposed on a first integrated circuit, a single pole multi throw (SPMT) switch disposed on a second integrated circuit, and a bypass switch coupled between a control node of the low noise amplifier transistor and an output node of the low noise amplifier transistor. The SPMT switch couples a plurality of module input terminals to a control node of the low noise amplifier transistor, and the bypass switch including a first switch coupled between the control node of the low noise amplifier transistor and an intermediate node, a second switch coupled between the intermediate node and the output node of the low noise amplifier transistor, and a third switch coupled between the intermediate node and a first reference node. The first integrated circuit and the second integrated circuit are disposed on a substrate.

Abstract: A circuit includes multiple switching networks coupled between corresponding multiple RF ports and a common RF port. Each of the multiple switching networks includes a first switch between its corresponding RF port and the common RF port. At least one of the multiple switching networks includes a selectable network between the first switch and the common RF port. The selectable network provides a DC path in a first state and a series capacitance in a second state. A control circuit is configured to establish an RF path by activating a first switch and by deactivating other first switches. The control circuit is also configured to establish an RF path by placing a selectable network in the first state when the control circuit operates in a first mode and by placing a selectable network in the second state when the control circuit operates in a second mode.

Abstract: In accordance with an embodiment, a method of testing an integrated circuit, includes receiving a supply voltage on the integrated circuit via a first input pin, providing power to circuits disposed on the integrated circuit via the first input pin, comparing the supply voltage to an internally generated voltage, generating a digital output value based on the comparing, and applying the digital output value to a pin of the integrated circuit.

Abstract: A circuit includes a current sensing circuit comprising a current input terminal coupled to an input port, a current output terminal coupled to a transmitted port, and a current sensing output terminal configured to provide a current sensing signal proportional to a current flowing between the current input terminal and the current output terminal. The circuit further includes a voltage sensing circuit having a voltage input terminal coupled to the transmitted port and a voltage sensing output terminal configured to provide a voltage sensing signal proportional to a voltage at the transmitted port. A combining circuit has a first input coupled to the current sensing output terminal, a second input coupled to the voltage sensing output terminal, and a combined output node coupled to an output port.

Abstract: A circuit includes multiple switching networks coupled between corresponding multiple RF ports and a common RF port. Each of the multiple switching networks includes a first switch between its corresponding RF port and the common RF port. At least one of the multiple switching networks includes a selectable network between the first switch and the common RF port. The selectable network provides a DC path in a first state and a series capacitance in a second state. A control circuit is configured to establish an RF path by activating a first switch and by deactivating other first switches. The control circuit is also configured to establish an RF path by placing a selectable network in the first state when the control circuit operates in a first mode and by placing a selectable network in the second state when the control circuit operates in a second mode.

Abstract: In accordance with an embodiment, a method of testing an integrated circuit, includes receiving a supply voltage on the integrated circuit via a first input pin, providing power to circuits disposed on the integrated circuit via the first input pin, comparing the supply voltage to an internally generated voltage, generating a digital output value based on the comparing, and applying the digital output value to a pin of the integrated circuit.

Abstract: A high-frequency switching circuit includes a high-frequency switching transistor, wherein a high-frequency signal-path extends via a channel-path of the high-frequency switching transistor. The high-frequency switching circuit includes a control circuit and the control circuit is configured to apply at least two different bias potentials to a substrate of the high-frequency switching transistor, depending on a control signal received by the control circuit.

Abstract: In accordance with an embodiment, a method of operating a directional coupler includes determining a coupled power variation by applying an input signal at an input port of the directional coupler, applying a first impedance at a transmitted port of the directional coupler, measuring a first coupled power at a coupled port of the directional coupler after applying the first impedance, applying a second impedance at the transmitted port of the directional coupler, measuring a second coupled power after applying the second impedance, and determining a difference between the first coupled power and the second coupled power to form the coupled power variation.

Abstract: In accordance with an embodiment, a circuit includes a plurality of switching networks coupled between a corresponding plurality of RF ports and a common RF port, and a control circuit. Each of the plurality of switching networks includes a first switch coupled between its corresponding RF port and the common RF port, and at least one of the plurality of switching networks includes a selectable network coupled between the first switch and the common RF port, such that the selectable network provides a DC path in a first state and a series capacitance in a second state.

Abstract: In accordance with an embodiment, a circuit includes a first signal path coupled between an input port and an output port, and a second coupled between the input port and the output port in parallel with the first signal path. The first signal path includes a low noise amplifier (LNA) having an input node coupled to the input port, and the second signal path includes a switch coupled between the input port and the output port.