Abstract: A thermoelectric element having high thermal resistance and requiring less semiconductor material than a conventional thermoelectric element with comparable performance comprises a substrate having a substrate front side and a substrate rear side opposite the substrate front side, a first contact, applied as a layer to the substrate front side, a second contact, applied as a layer to the substrate front side, a cut-off between the first and second contact which thermally and electrically separates the first and second contact from one another, and a thermoelectrically active layer having a top side and a bottom side, which are connected to one another by lateral delimiting surfaces, wherein the thermoelectrically active layer is arranged in the cut-off in such a way that the bottom side is on the substrate front side, and one of the lateral delimiting surfaces is against the first contact and one of the lateral delimiting surfaces is against the second contact.

Abstract: A thermoelectric element includes a first thermoelectric layer and a second thermoelectric layer, wherein a p-n junction is formed when the layers are formed. To specify a generic thermoelectric element that is suitable for a series connection in a thermoelectric generator without cabling, according to the invention—a substrate comprises a first and second contact surface on a cold side and a third contact surface on a hot side of the substrate. A temperature gradient can be applied between the contact surfaces on the cold and hot side. The first thermoelectric layer of the thermoelectric element is arranged on the substrate and connects a second contact surface to a third contact surface. The second thermoelectric layer of the thermoelectric element is arranged on the first thermoelectric layer, the p-n junction thereby being formed, and is connected to the first contact surface. The invention further relates to a method for producing such a thermoelectric element.

Abstract: A method for deposition of thermoelectric material on a substrate includes synthesizing nanoparticles of thermoelectric material and providing the nanoparticles in such a way that the printing operations can be implemented optimally, yet with the possibility of pressureless sintering thereafter. Pressureless sintering leads to dense layers, endowing the material with the mechanical and thermoelectric properties obtained by other methods. To prevent the nanoparticles reacting with one another during printing, they are coated with a molecular layer that prevents their aggregation and so leads to their homogeneous distribution in the ink or that renders the powders non-electroconductive for the purposes of laser printing, allowing them to be electrostatically charged so as to operate as toners. After the printing operation, this molecular layer is removed by a pressureless sintering treatment that confers a highly reactive surface on the particles.

Abstract: An imprint lithography apparatus is disclosed that includes a first imprint template provided with pattern recesses and a second imprint template provided with pattern recesses, wherein the pattern recesses of the first imprint template are configured to form features on a substrate which interconnect laterally with features formed by the pattern recesses of the second imprint template, and wherein the pattern recesses of the second imprint template have a critical dimension which is three or more times greater than the critical dimension of the pattern recesses of the first imprint template.

Abstract: A thermoelectric element includes a first thermoelectric layer and a second thermoelectric layer, wherein a p-n junction is formed when the layers are formed. To specify a generic thermoelectric element that is suitable for a series connection in a thermoelectric generator without cabling, according to the invention—a substrate comprises a first and second contact surface on a cold side and a third contact surface on a hot side of the substrate. A temperature gradient can be applied between the contact surfaces on the cold and hot side. The first thermoelectric layer of the thermoelectric element is arranged on the substrate and connects a second contact surface to a third contact surface. The second thermoelectric layer of the thermoelectric element is arranged on the first thermoelectric layer, the p-n junction thereby being formed, and is connected to the first contact surface. The invention further relates to a method for producing such a thermoelectric element.

Abstract: A thermoelectric element having high thermal resistance and requiring less semiconductor material than a conventional thermoelectric element with comparable performance comprises a substrate having a substrate front side and a substrate rear side opposite the substrate front side, a first contact, applied as a layer to the substrate front side, a second contact, applied as a layer to the substrate front side, a cut-off between the first and second contact which thermally and electrically separates the first and second contact from one another, and a thermoelectrically active layer having a top side and a bottom side, which are connected to one another by lateral delimiting surfaces, wherein the thermoelectrically active layer is arranged in the cut-off in such a way that the bottom side is on the substrate front side, and one of the lateral delimiting surfaces is against the first contact and one of the lateral delimiting surfaces is against the second contact.

Abstract: An imprint lithography apparatus is disclosed that includes a first imprint template provided with pattern recesses and a second imprint template provided with pattern recesses, wherein the pattern recesses of the first imprint template are configured to form features on a substrate which interconnect laterally with features formed by the pattern recesses of the second imprint template, and wherein the pattern recesses of the second imprint template have a critical dimension which is three or more times greater than the critical dimension of the pattern recesses of the first imprint template.