Abstract: Methods are provided for calibrating a tool using an eddy current probe and calibration wafers that each have a measurable predetermined property and a measurement of the measurable predetermined property of a first calibration wafer is different than a measurement of the measurable predetermined property of a second calibration wafer. The methods include determining a first set of impedance measurements of the calibration wafers while each is disposed in the tool and the tool has a tool parameter that is at a first condition, collecting a second set of impedance measurements of the calibration wafers while each is disposed in the tool and the tool parameter is at a second condition, establishing a reference point, based upon a first and a second data point from the first set of impedance measurements and a first and a second data point from the second set of impedance measurements.

Abstract: Methods and apparatus are provided for calibrating a chemical mechanical polishing (“CMP”) tool having a polishing station with a platen, an eddy current probe disposed within the platen, a polishing pad coupled to the platen, and a metal element disposed within the polishing station and configured to be selectively moved proximate the polishing pad. The method includes the steps of determining a thickness measurement of the polishing pad and adjusting at least one tool parameter based, in part, upon the determined thickness measurement of the polishing pad.

Abstract: An electrochemical planarization apparatus for planarizing a metallized surface on a workpiece includes a polishing pad and a platen. The platen is formed of conductive material, is disposed proximate to the polishing pad and is configured to have a negative charge during at least a portion of a planarization process. At least one electrical conductor is positioned within the platen. The electrical conductor has a first end connected to a power source. A workpiece carrier is configured to carry a workpiece and press the workpiece against the polishing pad. The power source applies a positive charge to the workpiece via the electrical conductor so that an electric potential difference between the metallized surface of the workpiece and the platen is created to remove at least a portion of the metallized surface from the workpiece.

Abstract: Methods and apparatus are provided for conditioning of polishing surfaces utilized during CMP processing. The method comprises contacting the polishing surface and a conditioning surface with a first force, one of the surfaces coupled to a support member that has an axis. The polishing surface and/or the conditioning surface is moved at a constant velocity. Torque exerted by the support member about the axis to effect a relative position between the conditioning surface and the polishing surface is measured and used to obtain a process variable. The process variable is compared to a setpoint value for the relative position of the conditioning surface and the polishing surface. A second force is calculated and the polishing surface and the conditioning surface then are contacted with the second force, if the process variable differs from the setpoint value by more than an allowed tolerance.

Abstract: A method is provided for controlling a chemical mechanical polishing (CMP) operation. The method is operative in a CMP apparatus having a plurality of end point detection probes and in which a plurality of process variables can be set to adjust the removal rate across a layer that is to be polished. In accordance with the method, the process variables are adjusted to a first setting and a layer overlying a work piece is polished using that setting. Information from the plurality of end point detection probes is collected and evaluated to determine removal rate of the layer. The process variables are adjusted in response the evaluation and a second layer on a second work piece is polished using the adjusted settings.

Abstract: Methods and apparatus are provided for performing a chemical-mechanical process on a workpiece surface. The apparatus includes a platen having a top surface and at least one inlet configured to receive a polishing fluid, a plurality of holes formed in the top surface, a manifold system in fluid communication with the at least one inlet and each of the holes, a controller adapted to supply valve command signals, and a plurality of valves, each valve being disposed in one of the holes and coupled to the controller to receive the valve command signals and being operable, in response thereto, to selectively move between an open and a closed position. The method includes the steps of supplying the valve command signals, and selectively opening and closing the valves in response to the valve command signals.

Abstract: An integrated pressure control system for a workpiece carrier includes a multizone carrier workpiece having multiple pressurizable zones and a pressure control system mounted to the carrier for controlling pressure provided to the pressurizable zones. The present invention also includes a workpiece carrier having a housing, a workpiece bladder coupled to the housing, and at least one pressure transducer mounted to the carrier housing for controlling pressure provided to the workpiece bladder.

Abstract: Layers of material deposited exhibit both a local and a global pattern. The local pattern is a function of the underlying wafer surface, but the global pattern is a function of the equipment in which the layer was deposited. Accurate reconstruction of the surface topology of a layer on a product wafer is achieved despite the local pattern by determining the surface topology of a blanket layer on a blank wafer, measuring the thickness of the layer at a few selected locations on a product wafer, calculating scaling coefficients representing deviations of the measured thickness from the blanket layer topology, and then multiplying the blanket layer topology by the scaling coefficients. The surface reconstruction results from modifying the surface topology of the blanket layer so that it has the same thickness at the measured locations as does the product wafer layer.

Abstract: Layers of material deposited exhibit both a local and a global pattern. The local pattern is a function of the underlying wafer surface, but the global pattern is a function of the equipment in which the layer was deposited. Accurate reconstruction of the surface topology of a layer on a product wafer is achieved despite the local pattern by determining the surface topology of a blanket layer on a blank wafer, measuring the thickness of the layer at a few selected locations on a product wafer, calculating scaling coefficients representing deviations of the measured thickness from the blanket layer topology, and then multiplying the blanket layer topology by the scaling coefficients. The surface reconstruction results from modifying the surface topology of the blanket layer so that it has the same thickness at the measured locations as does the product wafer layer.

Abstract: An electrochemical deposition apparatus and method for depositing a material onto a surface of a workpiece and for polishing the material are disclosed. The apparatus includes a platen and a polishing surface, including a conductive material and conductors embedded therein, disposed proximate the platen. During material deposition, a bias is applied across the conductor and the platen to cause deposition of material onto the workpiece surface.

Abstract: The present invention is an apparatus and method for planarizing a front surface of a wafer. The present invention may include a rigid platen, for supporting a polishing pad, connected to a supporting base that has means, or is connected to means, for orbiting the platen. A carrier, preferably a front-reference carrier with a plurality of individually controllable pressure areas, may be used to hold and press the wafer against the polishing pad while the supporting base orbits the rigid platen. The planarization process may be further optimized by orbiting the polishing pad in a radius smaller than 4 mm, orbiting the polishing pad faster than 400 orbits per minute or both.

Abstract: The invention is a method for optimizing the geometry of a plurality of zones in a multizone carrier used in a CMP process. This allows a multizone carrier, with a limited number of zones, to be designed that is able to apply, as closely as possible for that number of zones, an optimum pressure on the back surface of a wafer. An optimum pressure profile may be calculated by subtracting a desired post-CMP thickness profile from a typical incoming thickness profile and dividing the remainder by a polishing removal profile. The optimum pressure profile will generally be impossible to achieve with a limited number of zones within a multizone carrier. However, a carrier with an optimum geometry will be able to apply a pressure profile that is as close as possible given the limited number of zones within the carrier. The optimum geometry of the zones may be calculated using a multidimensional optimization procedure.

Abstract: A multi-zoned carrier for a chemical-mechanical planarization (CMP) polishing device includes a center cell, a middle cell, and an outer cell. Each of the cells are in fluid communication with each other through multiple conduits equipped with flow restrictors. The combination of cells and conduits allows more uniformity and planarity to be achieved during the chemical-mechanical planarization (CMP) polishing process.

Abstract: A process for quantifying the results of a planarization process provides metrics that can be applied to process parameters that affect the planarization results at various localized regions on a surface being planarized. A surface of a work piece is planarized and the results are recorded as an experimental work piece scan by a plurality of measurements of the amount of material removed as a function of the location on the surface of the work piece. The data from the plurality of measurements are fitted to an mth order polynomial to construct an approximation of a low spatial frequency scan. The work piece surface is then divided into a plurality of regions, each of the regions influenced by a process variable in the planarization process. The approximation of the low spatial frequency scan is then analyzed in each of the regions by fitting the low spatial frequency scan in that region to an nth order polynomial. The coefficient of the nth order term is used as a metric for the results in that region.

Abstract: In a method for mathematically characterizing a multizone CMP carrier, alternating zones are pressurized to a first pressure and the remaining zones are pressurized to a second lower pressure. A first wafer may then be polished using this combination of pressures and a first material removal profile may then be found. The pressures in the zones may then be reversed, and a second wafer may then be polished using this new combination of pressures, and a second material removal profile may then be found. Symmetrical points of intersection about the central axis of the carrier may be determined which identify the radius of each zone, and each point corresponds to a middle point for each transitional area between zones. The absolute values for the first derivatives for two pairs of symmetrical points may be averaged to determine a set of parameters that allow the multizone carrier to be mathematically characterized.

Abstract: An electrochemical deposition apparatus and method for depositing a material onto a surface of a workpiece and for polishing the material are disclosed. The apparatus includes a platen and a polishing surface, including a conductive material and conductors embedded therein, disposed proximate the platen. During material deposition, a bias is applied across the conductor and the platen to cause deposition of material onto the workpiece surface.

Abstract: An electrochemical planarization apparatus for planarizing a metallized surface on a workpiece includes a polishing pad and a platen. The platen is formed of conductive material, is disposed proximate to the polishing pad and is configured to have a negative charge during at least a portion of a planarization process. At least one electrical conductor is positioned within the platen. The electrical conductor has a first end connected to a power source. A workpiece carrier is configured to carry a workpiece and press the workpiece against the polishing pad. The power source applies a positive charge to the workpiece via the electrical conductor so that an electric potential difference between the metallized surface of the workpiece and the platen is created to remove at least a portion of the metallized surface from the workpiece.

Abstract: A multi-zoned carrier for a chemical-mechanical planarization (CMP) polishing device includes a center cell, a middle cell, and an outer cell. Each of the cells are in fluid communication with each other through multiple conduits equipped with flow restrictors. The combination of cells and conduits allows more uniformity and planarity to be achieved during the chemical-mechanical planarization (CMP) polishing process.

Abstract: A process for quantifying the results of a planarization process provides metrics that can be applied to process parameters that affect the planarization results at various localized regions on a surface being planarized. A surface of a work piece is planarized and the results are recorded as an experimental work piece scan by a plurality of measurements of the amount of material removed as a function of the location on the surface of the work piece. The data from the plurality of measurements are fitted to an mth order polynomial to construct an approximation of a low spatial frequency scan. The work piece surface is then divided into a plurality of regions, each of the regions influenced by a process variable in the planarization process. The approximation of the low spatial frequency scan is then analyzed in each of the regions by fitting the low spatial frequency scan in that region to an nth order polynomial. The coefficient of the nth order term is used as a metric for the results in that region.