Abstract: A coaxial interposer may shield certain signals (e.g., noisy signals, high speed signals, radio frequency (RF) signals) transmitted through an electronic device. The coaxial interposer may include a coaxial via that includes an outer barrel of non-conductive material and an inner barrel of non-conductive material separated by a conductive barrel. Further, the outer barrel of non-conductive material may be enclosed by an outer metal coating. The coaxial via serves to internally shield each signals transmitted between layers of a printed circuit board (PCB) within the electronic device.

Abstract: Printed circuit boards (PCB) used to mechanically and electrically connect electrical components within an electronic device. Thin printed circuit boards (PCB) may be desirable to manufacturers and users of electronic devices. Accordingly, a process for manufacturing a printed circuit board may involve manufacturing a thin bilayer dielectric. The process may involve applying a first non-conductive layer to a metal substrate, and curing the first non-conductive layer to a C-stage resin layer that is fully cross-linked layer in a clean environment. In turn, a B-stage layer that is partially cured may be applied to the C-stage resin layer. Using a hot press, one or more metal traces may be pressed onto the B-stage layer. The B-stage resin layer may be fully cross-linked and integrated with the C-stage resin layer after lamination of the one or more metal traces and the B-stage resin layer.

Abstract: An assembly (101) comprising a semiconductor device (110) with solderable bumps (112); a substrate (120) with a layer (130) of a first insulating compound and an underlying metal layer (140) patterned in contact pads (141) and connecting traces (142), the insulating layer having openings (132) to expose the surface (142a) and sidewalls (142b) of underlying traces; the device bumps soldered onto the contact pads, establishing a gap (150) between device and top insulating layer; and a second insulating compound (160) cohesively filling the gap and the second openings, thereby touching the underlying traces, the second insulating compound having a higher glass transition temperature, a higher modulus, and a lower coefficient of thermal expansion than the first insulating compound.

Abstract: An assembly (101) comprising a semiconductor device (110) with solderable bumps (112); a substrate (120) with a layer (130) of a first insulating compound and an underlying metal layer (140) patterned in contact pads (141) and connecting traces (142), the insulating layer having openings (132) to expose the surface (142a) and sidewalls (142b) of underlying traces; the device bumps soldered onto the contact pads, establishing a gap (150) between device and top insulating layer; and a second insulating compound (160) cohesively filling the gap and the second openings, thereby touching the underlying traces, the second insulating compound having a higher glass transition temperature, a higher modulus, and a lower coefficient of thermal expansion than the first insulating compound.

Abstract: An assembly (101) comprising a semiconductor device (110) with solderable bumps (112); a substrate (120) with a layer (130) of a first insulating compound and an underlying metal layer (140) patterned in contact pads (141) and connecting traces (142), the insulating layer having openings (132) to expose the surface (142a) and sidewalls (142b) of underlying traces; the device bumps soldered onto the contact pads, establishing a gap (150) between device and top insulating layer; and a second insulating compound (160) cohesively filling the gap and the second openings, thereby touching the underlying traces, the second insulating compound having a higher glass transition temperature, a higher modulus, and a lower coefficient of thermal expansion than the first insulating compound.

Abstract: An assembly (101) comprising a semiconductor device (110) with solderable bumps (112); a substrate (120) with a layer (130) of a first insulating compound and an underlying metal layer (140) patterned in contact pads (141) and connecting traces (142), the insulating layer having openings (132) to expose the surface (142a) and sidewalls (142b) of underlying traces; the device bumps soldered onto the contact pads, establishing a gap (150) between device and top insulating layer; and a second insulating compound (160) cohesively filling the gap and the second openings, thereby touching the underlying traces, the second insulating compound having a higher glass transition temperature, a higher modulus, and a lower coefficient of thermal expansion than the first insulating compound.

Abstract: An assembly (101) comprising a semiconductor device (110) with solderable bumps (112); a substrate (120) with a layer (130) of a first insulating compound and an underlying metal layer (140) patterned in contact pads (141) and connecting traces (142), the insulating layer having openings (132) to expose the surface (142a) and sidewalls (142b) of underlying traces; the device bumps soldered onto the contact pads, establishing a gap (150) between device and top insulating layer; and a second insulating compound (160) cohesively filling the gap and the second openings, thereby touching the underlying traces, the second insulating compound having a higher glass transition temperature, a higher modulus, and a lower coefficient of thermal expansion than the first insulating compound.

Abstract: An integrated circuit (IC) package, device, including a substrate having a top surface with an IC die mounting area and a peripheral area surrounding the mounting area, a plurality of parallel conductor layers, a plurality of insulating layers and a plurality of plated through holes (PTHs) extending through the conductor layers and insulating layers. Various substrate structures in which certain of the PTHs and/or conductor layers and/or insulating layers have different CTE's than the others is disclosed. The various structures may reduce circuit failures due to substrate warpage and/or solder joint damage associated with a CTE mismatch between the substrate and the IC die.

Abstract: An assembly (101) comprising a semiconductor device (110) with solderable bumps (112); a substrate (120) with a layer (130) of a first insulating compound and an underlying metal layer (140) patterned in contact pads (141) and connecting traces (142), the insulating layer having openings (132) to expose the surface (142a) and sidewalls (142b) of underlying traces; the device bumps soldered onto the contact pads, establishing a gap (150) between device and top insulating layer; and a second insulating compound (160) cohesively filling the gap and the second openings, thereby touching the underlying traces, the second insulating compound having a higher glass transition temperature, a higher modulus, and a lower coefficient of thermal expansion than the first insulating compound.

Abstract: An electronic assembly includes a copper pillar attach substrate that has a dielectric layer and a solder resist layer overlying the dielectric layer. The solder resist layer has a plurality of solder resist openings. A plurality of parallel traces are formed on the dielectric layer. Each trace has a first end portion, a second end portion and an intermediate portion. The first and second end portions of each trace are covered by the solder resist layer and the intermediate portions are positioned in the solder resist openings. Each of the intermediate portions has at least one conductive coating layer on it and has a height measured from the dielectric layer to the top of the topmost conductive coating layer that is at least as great as the solder resist layer thickness.

Abstract: An electronic assembly includes a copper pillar attach substrate that has a dielectric layer and a solder resist layer overlying the dielectric layer. The solder resist layer has a plurality of solder resist openings. A plurality of parallel traces are formed on the dielectric layer. Each trace has a first end portion, a second end portion and an intermediate portion. The first and second end portions of each trace are covered by the solder resist layer and the intermediate portions are positioned in the solder resist openings. Each of the intermediate portions has at least one conductive coating layer on it and has a height measured from the dielectric layer to the top of the topmost conductive coating layer that is at least as great as the solder resist layer thickness.

Abstract: An integrated circuit (IC) package, device, including a substrate having a top surface with an IC die mounting area and a peripheral area surrounding the mounting area, a plurality of parallel conductor layers, a plurality of insulating layers and a plurality of plated through holes (PTHs) extending through the conductor layers and insulating layers. Various substrate structures in which certain of the PTHs and/or conductor layers and/or insulating layers have different CTE's than the others is disclosed. The various structures may reduce circuit failures due to substrate warpage and/or solder joint damage associated with a CTE mismatch between the substrate and the IC die.

Abstract: Modified scrap rubber particles, a method for forming the modified rubber particles and compositions including the modified rubber particles. The rubber particles are impregnated with at least one polymerizable monomer and polymerized to impregnate the rubber particles with a polymer. The impregnated polymer provides the modified rubber particles with improved properties which increase the potential uses for recycled scrap rubber. The modified rubber particles are useful in surface coatings, such as latex paint or powder coatings and can be used as a soil substitute.

Abstract: Modified scrap rubber particles, a method for forming the modified rubber particles and compositions including the modified rubber particles. The rubber particles are impregnated with at least one polymerizable monomer and polymerized to impregnate the rubber particles with a polymer. The impregnated polymer provides the modified rubber particles with improved properties which increase the potential uses for recycled scrap rubber. The modified rubber particles are useful in surface coatings, such as latex paint or powder coatings and can be used as a soil substitute.

Abstract: Modified scrap rubber particles, a method for forming the modified rubber particles and compositions including the modified rubber particles. The rubber particles are impregnated with at least one polymerizable monomer and polymerized to impregnate the rubber particles with a polymer. The impregnated polymer provides the modified rubber particles with improved properties which increase the potential uses for recycled scrap rubber. The modified rubber particles are useful in surface coatings, such as latex paint or powder coatings and can be used as a soil substitute.

Abstract: Disclosed are embodiments of a carrier medium for integrated circuit die (or other components). The carrier medium may include a carrier tape and a heat shrinkable cover tape, the carrier tape including a number of spaced-apart die retaining areas along the length of this tape. Other embodiments are described and claimed.

Abstract: Modified scrap rubber particles, a method for forming the modified rubber particles and compositions including the modified rubber particles. The rubber particles are impregnated with at least one polymerizable monomer and polymerized to impregnate the rubber particles with a polymer. The impregnated polymer provides the modified rubber particles with improved properties which increase the potential uses for recycled scrap rubber. The modified rubber particles are useful in surface coatings, such as latex paint or powder coatings and can be used as a soil substitute.

Abstract: An apparatus and process for pulverization of polymeric material having a multi-component screw disposed within an elongated cylindrical housing. The multi-component screw has an independently rotatable extrusion portion and an independently rotatable pulverization portion. A cooling means is provided to maintain the fine powder material produced during the pulverization process at a desired temperature. In one embodiment of this invention, a second multi-component screw having an independently rotatable extrusion portion and an independently rotatable pulverization portion is disposed within the elongated cylindrical housing.

Abstract: An apparatus and process for pulverization of polymeric material having a multi-component screw disposed within an elongated cylindrical housing. The multi-component screw has an independently rotatable extrusion portion and an independently rotatable pulverization portion. A cooling means is provided to maintain the fine powder material produced during the pulverization process at a desired temperature. In one embodiment of this invention, a second multi-component screw having an independently rotatable extrusion portion and an independently rotatable pulverization portion is disposed within the elongated cylindrical housing.