Patents by Inventor Ning-Bew Wong

Ning-Bew Wong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100190661
    Abstract: A surface-enhanced Raman spectroscopy (SERS)—active structure for use in Raman scattering detection has an array of nanostructures formed on a substrate by deposition and chemical etching. The nanostructures are coated with metal nanoparticles.
    Type: Application
    Filed: January 26, 2009
    Publication date: July 29, 2010
    Applicant: CITY UNIVERSITY OF HONG KONG
    Inventors: Shuit-Tong Lee, Ning Bew Wong, Ming-Liang Zhang, Meng-Su Yang, Ming-Wang Shao
  • Publication number: 20090201496
    Abstract: The present invention relates to an arrangement of nanomaterials which act as a substrate for a surface-enhanced Raman scattering. A method of Raman scattering and a method of manufacturing the substrate are also disclosed. The substrate comprises a plurality of nanostructures, for example nanowires, and metal nanoparticles are arranged on the surface of the nanostructures. The metal nanoparticles are of a material selected from the group comprising Au, Ag, Cu, Fe, Co, Ni, Ru, Rh, Pd, Pt or an alloy. This nano-on-nano arrangement increase the surface area and provides a significant increase in detection sensitivity. A substrate comprising a nanomaterial substrate form of a plurality of nanostructure of a noble metal and noble metal nanoparticles of a different material on the surface of said nanostructure is also disclosed.
    Type: Application
    Filed: April 21, 2008
    Publication date: August 13, 2009
    Inventors: Shuit-Tong Lee, Ning Bew Wong, Mingwang Shao, Mingliang Zhang
  • Patent number: 7132126
    Abstract: A simple chemical technique has been developed to grow large quantity of carbon nanostructures, including carbon nanotubes, hydrocarbon nanotubes and carbon nanoonions, in the organic solution at ambient (room) temperature and atmospheric pressure using silicon nanostructures (nanowires, nanodots, ribbons, and porous silicon) as starting materials. These CNT and CNO have the lattice d-spacing from 3.4 ? to 5 ?.
    Type: Grant
    Filed: October 17, 2002
    Date of Patent: November 7, 2006
    Assignee: City University of Hong Kong
    Inventors: Shuit-Tong Lee, Chi-Pui Li, Xu-Hui Sun, Ning-Bew Wong, Chun-Sing Lee, Boon-Keng Teo
  • Publication number: 20040076576
    Abstract: A simple chemical technique has been developed to grow large quantity of carbon nanostructures, including carbon nanotubes, hydrocarbon nanotubes and carbon nanoonions, in the organic solution at ambient (room) temperature and atmospheric pressure using silicon nanostructures (nanowires, nanodots, ribbons, and porous silicon) as starting materials. These CNT and CNO have the lattice d-spacing from 3.4 Å to 5 Å.
    Type: Application
    Filed: October 17, 2002
    Publication date: April 22, 2004
    Inventors: Shuit-Tong Lee, Chi-Pui Li, Xu-Hui Sun, Ning-Bew Wong, Chun-Sing Lee, Boon-Keng Teo