Patents by Inventor Ning Tai

Ning Tai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12087642
    Abstract: Techniques described herein enable respective (different) types of metal silicide layers to be formed for p-type source/drain regions and n-type source/drain regions in a selective manner. For example, a p-type metal silicide layer may be selectively formed over a p-type source/drain region (e.g., such that the p-type metal silicide layer is not formed over the n-type source/drain region) and an n-type metal silicide layer may be formed over the n-type source/drain region (which may be selective or non-selective). This provides a low Schottky barrier height between the p-type metal silicide layer and the p-type source/drain region, as well as a low Schottky barrier height between the n-type metal silicide layer and the n-type source/drain region. This reduces the contact resistance for both p-type source/drain regions and n-type source/drain regions.
    Type: Grant
    Filed: April 28, 2023
    Date of Patent: September 10, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wei-Yip Loh, Yan-Ming Tsai, Yi-Ning Tai, Raghunath Putikam, Hung-Yi Huang, Hung-Hsu Chen, Chih-Wei Chang
  • Publication number: 20230411496
    Abstract: A semiconductor structure and method of forming a semiconductor structure are provided. In some embodiments, the method includes forming a gate structure over a substrate. An epitaxial source/drain region is formed adjacent to the gate structure. A dielectric layer is formed over the epitaxial source/drain region. An opening is formed, the opening extending through the dielectric layer and exposing the epitaxial source/drain region. Sidewalls of the opening are defined by the dielectric layer and a bottom of the opening is defined by the epitaxial source/drain region. A silicide layer is formed on the epitaxial source/drain region. A metal capping layer including tungsten, molybdenum, or a combination thereof is selectively formed on the silicide layer by a first deposition process. The opening is filled with a first conductive material in a bottom-up manner from the metal capping layer by a second deposition process different from the first deposition process.
    Type: Application
    Filed: May 23, 2022
    Publication date: December 21, 2023
    Inventors: Kan-Ju LIN, Chien CHANG, Chih-Shiun CHOU, Tai Min CHANG, Yi-Ning TAI, Hong-Mao LEE, Yan-Ming TSAI, Wei-Yip LOH, Harry CHIEN, Chih-Wei CHANG, Ming-Hsing TSAI, Lin-Yu HUANG
  • Patent number: 11757806
    Abstract: Disclosed are some implementations of systems, apparatus, methods and computer program products for publisher and share action integration in a user interface (UI) for automated messaging. In some implementations, information is displayed in a first component and in a second component in a UI on a display. The first component is a publisher configured for composing and sharing messages on different communication channels using different share actions. The second component includes links to data items. When one of the data items is selected, a set of share actions for sharing the selected item using the publisher can be identified and displayed. When one of the displayed share actions is selected, it can be determined that the selected share action is applicable to one of the communication channels. A reference to the selected item can be provided in a message being composed in the publisher for sharing on the one communication channel.
    Type: Grant
    Filed: June 30, 2021
    Date of Patent: September 12, 2023
    Assignee: Salesforce, Inc.
    Inventors: Eric Shu Wang Yip, Ning Tai, Ishita Shah, Cuong Si The Dong, Jose Garcia
  • Publication number: 20230260847
    Abstract: Techniques described herein enable respective (different) types of metal silicide layers to be formed for p-type source/drain regions and n-type source/drain regions in a selective manner. For example, a p-type metal silicide layer may be selectively formed over a p-type source/drain region (e.g., such that the p-type metal silicide layer is not formed over the n-type source/drain region) and an n-type metal silicide layer may be formed over the n-type source/drain region (which may be selective or non-selective). This provides a low Schottky barrier height between the p-type metal silicide layer and the p-type source/drain region, as well as a low Schottky barrier height between the n-type metal silicide layer and the n-type source/drain region. This reduces the contact resistance for both p-type source/drain regions and n-type source/drain regions.
    Type: Application
    Filed: April 28, 2023
    Publication date: August 17, 2023
    Inventors: Wei-Yip LOH, Yan-Ming TSAI, Yi-Ning TAI, Raghunath PUTIKAM, Hung-Yi HUANG, Hung-Hsu CHEN, Chih-Wei CHANG
  • Patent number: 11676868
    Abstract: Techniques described herein enable respective (different) types of metal silicide layers to be formed for p-type source/drain regions and n-type source/drain regions in a selective manner. For example, a p-type metal silicide layer may be selectively formed over a p-type source/drain region (e.g., such that the p-type metal silicide layer is not formed over the n-type source/drain region) and an n-type metal silicide layer may be formed over the n-type source/drain region (which may be selective or non-selective). This provides a low Schottky barrier height between the p-type metal silicide layer and the p-type source/drain region, as well as a low Schottky barrier height between the n-type metal silicide layer and the n-type source/drain region. This reduces the contact resistance for both p-type source/drain regions and n-type source/drain regions.
    Type: Grant
    Filed: August 19, 2021
    Date of Patent: June 13, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wei-Yip Loh, Yan-Ming Tsai, Yi-Ning Tai, Raghunath Putikam, Hung-Yi Huang, Hung-Hsu Chen, Chih-Wei Chang
  • Publication number: 20230054633
    Abstract: Techniques described herein enable respective (different) types of metal silicide layers to be formed for p-type source/drain regions and n-type source/drain regions in a selective manner. For example, a p-type metal silicide layer may be selectively formed over a p-type source/drain region (e.g., such that the p-type metal silicide layer is not formed over the n-type source/drain region) and an n-type metal silicide layer may be formed over the n-type source/drain region (which may be selective or non-selective). This provides a low Schottky barrier height between the p-type metal silicide layer and the p-type source/drain region, as well as a low Schottky barrier height between the n-type metal silicide layer and the n-type source/drain region. This reduces the contact resistance for both p-type source/drain regions and n-type source/drain regions.
    Type: Application
    Filed: August 19, 2021
    Publication date: February 23, 2023
    Inventors: Wei-Yip LOH, Yan-Ming TSAI, Yi-Ning TAI, Raghunath PUTIKAM, Hung-Yi HUANG, Hung-Hsu CHEN, Chih-Wei CHANG
  • Publication number: 20230036693
    Abstract: Semiconductor devices and methods of manufacturing are provided. In some embodiments the method includes depositing an etch stop layer over a first hard mask material, the first hard mask material over a gate stack, depositing an interlayer dielectric over the etch stop layer, forming a first opening through the interlayer dielectric, the etch stop layer, and the first hard mask material, the first opening exposing a conductive portion of the gate stack, and treating sidewalls of the first opening with a first dopant to form a first treated region within the interlayer dielectric, a second treated region within the etch stop layer, a third treated region within the first hard mask material, and a fourth treated region within the conductive portion, wherein after the treating the fourth treated region has a higher concentration of the first dopant than the first treated region.
    Type: Application
    Filed: February 18, 2022
    Publication date: February 2, 2023
    Inventors: Kan-Ju Lin, Chien Chang, Chih-Shiun Chou, Tai Min Chang, Yi-Ning Tai, Hung-Yi Huang, Chih-Wei Chang, Ming-Hsing Tsai, Lin-Yu Huang
  • Publication number: 20210400000
    Abstract: Disclosed are some implementations of systems, apparatus, methods and computer program products for publisher and share action integration in a user interface (UI) for automated messaging. In some implementations, information is displayed in a first component and in a second component in a UI on a display. The first component is a publisher configured for composing and sharing messages on different communication channels using different share actions. The second component includes links to data items. When one of the data items is selected, a set of share actions for sharing the selected item using the publisher can be identified and displayed. When one of the displayed share actions is selected, it can be determined that the selected share action is applicable to one of the communication channels. A reference to the selected item can be provided in a message being composed in the publisher for sharing on the one communication channel.
    Type: Application
    Filed: June 30, 2021
    Publication date: December 23, 2021
    Inventors: Eric Shu Wang Yip, Ning Tai, Ishita Shah, Cuong Si The Dong, Jose Garcia
  • Patent number: 11075863
    Abstract: Disclosed are some implementations of systems, apparatus, methods and computer program products for publisher and share action integration in a user interface (UI) for automated messaging. In some implementations, information is displayed in a first component and in a second component in a UI on a display. The first component is a publisher configured for composing and sharing messages on different communication channels using different share actions. The second component includes links to data items. When one of the data items is selected, a set of share actions for sharing the selected item using the publisher can be identified and displayed. When one of the displayed share actions is selected, it can be determined that the selected share action is applicable to one of the communication channels. A reference to the selected item can be provided in a message being composed in the publisher for sharing on the one communication channel.
    Type: Grant
    Filed: January 15, 2020
    Date of Patent: July 27, 2021
    Assignee: salesforce.com, inc.
    Inventors: Eric Shu Wang Yip, Ning Tai, Ishita Shah, Cuong Si The Dong, Jose Garcia
  • Publication number: 20200153762
    Abstract: Disclosed are some implementations of systems, apparatus, methods and computer program products for publisher and share action integration in a user interface (UI) for automated messaging. In some implementations, information is displayed in a first component and in a second component in a UI on a display. The first component is a publisher configured for composing and sharing messages on different communication channels using different share actions. The second component includes links to data items. When one of the data items is selected, a set of share actions for sharing the selected item using the publisher can be identified and displayed. When one of the displayed share actions is selected, it can be determined that the selected share action is applicable to one of the communication channels. A reference to the selected item can be provided in a message being composed in the publisher for sharing on the one communication channel.
    Type: Application
    Filed: January 15, 2020
    Publication date: May 14, 2020
    Applicant: salesforce.com, inc.
    Inventors: Eric Shu Wang Yip, Ning Tai, Ishita Shah, Cuong Si The Dong, Jose Garcia
  • Patent number: 10567311
    Abstract: Disclosed are some implementations of systems, apparatus, methods and computer program products for publisher and share action integration in a user interface (UI) for automated messaging. In some implementations, information is displayed in a first component and in a second component in a UI on a display. The first component is a publisher configured for composing and sharing messages on different communication channels using different share actions. The second component includes links to data items. When one of the data items is selected, a set of share actions for sharing the selected item using the publisher can be identified and displayed. When one of the displayed share actions is selected, it can be determined that the selected share action is applicable to one of the communication channels. A reference to the selected item can be provided in a message being composed in the publisher for sharing on the one communication channel.
    Type: Grant
    Filed: April 29, 2016
    Date of Patent: February 18, 2020
    Assignee: salesforce.com, inc.
    Inventors: Eric Shu Wang Yip, Ning Tai, Ishita Shah, Cuong Si The Dong, Jose Garcia
  • Publication number: 20170315680
    Abstract: Disclosed are some implementations of systems, apparatus, methods and computer program products for publisher and share action integration in a user interface (UI) for automated messaging. In some implementations, information is displayed in a first component and in a second component in a UI on a display. The first component is a publisher configured for composing and sharing messages on different communication channels using different share actions. The second component includes links to data items. When one of the data items is selected, a set of share actions for sharing the selected item using the publisher can be identified and displayed. When one of the displayed share actions is selected, it can be determined that the selected share action is applicable to one of the communication channels. A reference to the selected item can be provided in a message being composed in the publisher for sharing on the one communication channel.
    Type: Application
    Filed: April 29, 2016
    Publication date: November 2, 2017
    Inventors: Eric Shu Wang Yip, Ning Tai, Ishita Shah, Cuong Si The Dong, Jose Garcia