Abstract: A light-emitting panel has a light-emitting area and an isolation area adjacent to the light-emitting area The light-emitting panel comprises a base substrate and a barrier structure, wherein the barrier structure is arranged on one side of the base substrate and located in the isolation area, and comprises a first isolation pattern, a second isolation pattern, a third isolation pattern and a fourth isolation pattern, which are sequentially arranged in a stacked manner, and the first isolation pattern is closer to the base substrate than the fourth isolation pattern; and an orthographic projection of the first isolation pattern on the substrate is located in an orthographic projection of the second isolation pattern on the base substrate, and an orthographic projection of the third isolation pattern on the base substrate is located in an orthographic projection of the fourth isolation pattern on the base substrate.

Abstract: Methods and devices for video decoding are provided. The method may include obtaining a plurality of coding blocks within a video frame, where the plurality of coding blocks may include at least one chroma coding block and a plurality of luma coding blocks. Further, the method may include determining whether to apply OBMC to the at least one chroma coding block and the plurality of luma coding blocks to generate prediction samples for the video frame in response to determining that a local chroma tree partition is applied to the plurality of coding blocks.

Abstract: A semiconductor structures and a method for forming the same are provided. The semiconductor structure includes first nanostructures and second nanostructures spaced apart from the first nanostructures in a first direction. A left-most point of the first nanostructures and a left-most point of the second nanostructures has a first distance in the first direction. The semiconductor structure further includes first source/drain features attached to opposite sides of the first nanostructures in a second direction being orthogonal to the first direction and third nanostructures and fourth nanostructures spaced apart from the third nanostructures in the first direction. A left-most point of the third nanostructures and a left-most point of the fourth nanostructures has a second distance in the first direction. In addition, the third nanostructures are wider than the first nanostructures in the first direction, and the first distance is smaller than the second distance.

Abstract: An iron-based metal powder for ultra-high-speed laser cladding comprising chemical composition and mass percentage of the metal powder of: C 0.6˜1.0%, Cr 17.0˜20.0%, Ni 5.0˜6.5%, Mn 2.0˜4.0%, Mo 1.0˜1.5%, Ti 4.0˜6.0%, B 1.0˜1.5%, N 0.08˜0.15%, Si?0.5%, P?0.030%, S?0.030%, balance of Fe and unavoidable impurities, wherein the particle size of the metal powder is 15˜65 ?m, the fluidity is 16˜20 s/50 g.

Abstract: Provided are a support plate, a display screen, and an electronic device. The support plate includes a first board and a second board. The first board and the second board are arranged back to back, and the first board is configured to be attached to a display panel. The support plate includes a bending area, and the support plate is configured to bend in the bending area along a preset axial line L. First strip-shaped slots are formed on the first board, and second strip-shaped slots distributed in an array at intervals along the axial line L are formed on the second board. The first strip-shaped slots are continuously provided along the axial line L and extend through the first board to form a unified edge structure.

Abstract: Disclosed are a special fertilizer for intercropping maize and peanuts and a cultivation method for maintaining soil organic carbon (SOC) balance, belonging to the technical field of SOC balance. The special fertilizer for intercropping maize and peanuts includes the following raw materials: coated urea, heavy superphosphate, ammonium sulfate, fermented soybean meal, bentonite, sodium molybdate, borax, humic acid, ammonium dihydrogen phosphate, plant ash and zinc sulfate heptahydrate. The cultivation method includes the steps of land selection, land preparation, fertilizing, sowing, field management, and rotation.

Abstract: The present invention is directed to electrical circuits and methods. According to a specific embodiment, the present invention provides a voltage compensation mechanism for one or more single-phone avalanche diodes (SPADs). A reference voltage is generated based at least on an operating voltage of the SPADs. The reference voltage is coupled to a charge pump that generates a compensation voltage for the diodes. There are other embodiments as well.

Abstract: The present invention discloses a system for providing mobile power, in which the required equipment for the power supply system at fracturing fields as well as connection cables and connection hoses are integrated properly, assigned onto three transport vehicles for movement and effectively connected. Intake components and a turbine generation system are combined on a first transport vehicle and installed together, then transported to customer sites directly, thus saving the installation time at the user sites. The two different designs on the locations of an exhaust stack and an exhaust silencer not only meet the requirements of road transportation, but also meet the requirements of exhaust gas emission during operations.

Abstract: A gate structure includes a substrate divided into an N-type transistor region and a P-type transistor region. An interlayer dielectric covers the substrate. A first trench is embedded in the interlayer dielectric within the N-type transistor region. A first gate electrode having a bullet-shaped profile is disposed in the first trench. A gate dielectric contacts the first trench. An N-type work function layer is disposed between the gate dielectric layer and the first gate electrode. A second trench is embedded in the interlayer dielectric within the P-type transistor region. A second gate electrode having a first mushroom-shaped profile is disposed in the second trench. The gate dielectric layer contacts the second trench. The N-type work function layer is disposed between the gate dielectric layer and the second gate electrode. A first P-type work function layer is disposed between the gate dielectric layer and the N-type work function layer.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor fin over a substrate and multiple semiconductor nanostructures suspended over the semiconductor fin. The semiconductor device structure also includes a gate stack extending across the semiconductor fin, and the gate stack wraps around each of the semiconductor nanostructures. The semiconductor device structure further includes a first epitaxial structure and a second epitaxial structure sandwiching the semiconductor nanostructures. In addition, the semiconductor device structure includes an isolation structure between the semiconductor fin and the gate stack. The isolation structure extends exceeding opposite sidewalls of the first epitaxial structure.

Abstract: A method and system are disclosed for use in monitoring/screening/diagnosing sleep or wake state of a subject or patient. The method generally includes monitoring the patient's activity during one or more sleep sessions comprising a plurality of intervals known as epochs. The sleep/wake state of the subject is determined during each epoch of the session using actigraphy data obtained during the monitoring session. The actigraphy data provides information about the activity of a patient during an epoch. The sleep or wake state is determined based on a ratio of the activity count during an epoch to the activity count during a preceding epoch. If the ratio is greater than a first activity threshold, then a “wake” indication may be provided by, for example, the system. Alternatively, or additionally, a “wake” indication may be determined if the activity count during the epoch is greater than a threshold.

Abstract: A P2X3 and/or P2X2/3 receptor antagonist of formula (I), a pharmaceutical composition comprising the same, and a use thereof in preparing a drug for preventing or treating a disease mediated by the P2X3 and/or P2X2/3 receptor antagonist.

Abstract: A method for controlling lane changing of a vehicle, including: receiving a lane changing instruction (step 101); acquiring a speed parameter of the vehicle (step 102); according to the speed parameter, determining a controlling coefficient of a predetermined controller (step 103); acquiring a position-deviation parameter and a heading-angle parameter of the vehicle; if the position-deviation parameter is greater than or equal to a first threshold, or, if the heading-angle parameter is greater than or equal to a second threshold, according to the controlling coefficient, the position-deviation parameter and the heading-angle parameter, determining a target steering-wheel steering angle of the vehicle; and according to the target steering-wheel steering angle, controlling the vehicle to perform a lane changing operation, till the position-deviation parameter is less than the first threshold, and the heading-angle parameter is less than the second threshold (step 105).

Abstract: The present disclosure pertains to methods for producing aflibercept from a host cell cultured in a chemically defined medium (CDM) including purification of aflibercept, wherein aflibercept following purification includes aflibercept variants that have at least one oxidized amino acid residue selected from the group consisting of tryptophan, histidine and a combination thereof.

Abstract: Methods and devices for video decoding are provided. The method includes: receiving a control variable associated with the video block at a coding level, where the control variable enables adaptive switch between a plurality of motion vector refinement (MVR) offset sets, and the video block comprises first and second geometric partitions; receiving one or more syntax elements to determine a first MVR offset for the first geometric partition and a second MVR offset for the second geometric partition from a selected MVR offset set; obtaining a first motion vector (MV) and a second MV from a candidate list for the first and second geometric partitions; calculating a first refined MV and a second refined MV based on the first and second MVs and the first and second MVR offsets; and obtaining prediction samples for the video block based on the first and second refined MVs.

Abstract: The present disclosure discloses a camera exposure processing method and system. The method includes: obtaining trigger signals, the trigger signals being used to trigger the camera to collect image data and trigger the light source to turn on and off in turn in a fixed sequence; triggering cyclically n light sources to turn on in turn; triggering multiple sensor lines of the camera to perform image acquisition on the object simultaneously; extracting the image data of the exposed object under the turned-on light source collected by the multiple sensor lines to obtain effective data of the object, wherein a sequential lighting order is that after a former light source is cyclically turned on y times, a latter light source is cyclically turned on y times; and splicing all image data of the same position of the object to obtain a spliced image of the object under different light sources.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises a dielectric layer formed over a conductive feature; a semiconductor stack formed over the dielectric layer, wherein the semiconductor stack including semiconductor layers stacked up and separated from each other; a first metal gate structure and a second metal gate structure formed over a channel region of the semiconductor stack, wherein the first metal gate structure and the second metal gate structure wrap each of the semiconductor layers of the semiconductor stack; and a first epitaxial feature disposed between the first metal gate structure and the second metal gate structure over a first source/drain region of the semiconductor stack, wherein the first epitaxial feature extends through the dielectric layer and contacts the conductive feature.

Abstract: A method of manufacturing an array substrate, includes: providing a substrate; forming a gate conductive layer including at least one first alignment mark; forming a source-drain conductive thin film; aligning a first mask and the substrate on which the gate conductive layer and the source-drain conductive thin film have been formed according to the at least one first alignment mark; patterning the source-drain conductive thin film by using the first mask to form at least one second alignment mark to obtain a source-drain conductive layer; forming a black matrix thin film; aligning a second mask and the substrate on which the gate conductive layer, the source-drain conductive layer and the black matrix thin film have been formed according to the at least one second alignment mark; patterning the black matrix thin film by using the second mask to form a black matrix; and forming a color filter layer.

Abstract: Three artificial intelligence (AI) linguistic processing architectures are proposed for early detection of Alzheimer's Disease based entirely on a patient's language abilities. Three C-Attention network architectures are presented: one that uses only PoS features, one that uses only the latent features (e.g., language embeddings) and a unified architecture, which uses both features. (FIG. 3).