Abstract: A system for inspecting surfaces that includes a mobile base, sensors for base navigation, sensors for surface inspection, a communication system and a host computer that executes modules for base motion planning and navigation, location, point cloud acquisition and processing, surface modelling and analysis, multi module coordination and user interfaces. The inspection procedure has the robot move in a zigzag pattern trajectory over the surface. For every fixed distance, a 3D point cloud of the surface is generated and the location of the point cloud with respect to the world coordinate system is recorded. The location of the point cloud is based on SLAM for spatial mapping. At the same time, a high-resolution photo of the corresponding area on the surface is recorded by the camera. Both the point cloud and the photo are transmitted to the host computer for processing and analysis.

Abstract: Embodiments of the present application provide a method for processing a semiconductor structure and a method for forming a semiconductor structure. The method for processing a semiconductor structure includes: providing a semiconductor substrate, the semiconductor substrate being provided with a feature portion, the aspect ratio of the feature portion being greater than a preset aspect ratio, a mask layer being provided on the top of the feature portion; ashing a semiconductor structure, the semiconductor structure comprising the semiconductor substrate, the feature portion, and the mask layer; cleaning the semiconductor structure; drying the semiconductor structure; and removing the mask layer.

Abstract: Disclosed in the present disclosure are a cleaning machine and a cleaning method. The cleaning machine includes: a wet cleaning module, configured to execute a wet cleaning process on a wafer; a dry cleaning module, configured to execute a dry cleaning process on the wafer; a conveying module, configured to input the wafer into the wet cleaning module or the dry cleaning module, or output the wafer from the wet cleaning module or the dry cleaning module; a transferring module, configured to transfer the wafer from the wet cleaning module to the dry cleaning module or transfer the wafer from the dry cleaning module to the wet cleaning module; and a processing module, configured to extract gas from the transferring module.

Abstract: A muscle-like actuator comprises a motor with a rotatable drive shaft and a string with a shear thickening fluid (STF) embedded therein. One end of the string is attached to the drive shaft and the other end is connected to a load to form a twisted string actuator (TSA). By controlling the speed and current of the motor, the characteristics of the actuator can be changed. Multiple strings may be located in a flexible soft tube to improve the mechanical properties of the actuator.

Abstract: A semiconductor structure is formed by: providing a substrate, wherein an insulation layer, an initial metal conductive layer, an initial sacrifice layer, and a mask layer stacking in sequence are formed on the substrate, wherein the initial sacrifice layer includes a metal oxide layer; forming a metal conductive layer and a sacrifice layer atop the metal conductive layer by etching the initial sacrifice layer and the initial metal conductive layer using an oxygen source gas as an etching gas based on a patterned mask layer; removing the patterned mask layer by performing an ashing process using the oxygen source gas as the etching gas; removing the sacrifice layer as well as a by-product formed during the etching and the ashing process and exposing the metal conductive layer by performing a corrosion process using an alkaline corrosion solution; and forming an isolation structure between adjacent metal conductive layers.

Abstract: A nano scale robotic system for single cell DNA sequencing of a strand of DNA positioned on a slide utilizes an atomic force microscope (AFM) having an end effector in the form of a cantilever with a tip. The AFM causes its cantilever tip to scan over the base pairs of the DNA strand. A pair of spaced-apart electrodes at the tip makes contact with opposite sides of the DNA strand and the current between bases of the DNA strand is measured by a current measurement system connected to the electrodes. An artificial intelligence-based data analytic system determines the DNA sequence based on the current from the current measuring system. The AFM tip is guided over the DNA strand by comparing compressed desired intensity local scan images and compressed actual intensity local scan images and using the difference to control the location of the tip.

Abstract: A substituted heteroaryl compound, and a composition and application thereof. The compound is a compound as represented by formula (I) or a stereoisomer, a tautomer, an oxynitride, a solvate, a metabolite, a pharmaceutically acceptable salt or a prodrug of the compound as represented by formula (I). A drug composition contains the compound. The compound and the drug composition can adjust activity of a JAK kinase, particularly activity of TYK2, and are used for preventing, handling, treating and relieving diseases or disorder mediated by the activity of the JAK kinase.

Abstract: The present invention relates to the field of medicine, and specifically relates to a triazine compounds as represented by formula (I), or a stereoisomer, a tautomer, a nitrogen oxide, a solvate, or a pharmaceutically acceptable salt thereof, a pharmaceutical composition containing the compound, and use of the compound and the pharmaceutical composition thereof in the preparation of drugs for treating and/or preventing proliferative disease, autoimmune diseases, allergic diseases, inflammatory diseases, transplant rejection, cancers, viral infectious diseases, or other diseases in mammals. The compound provided by the present invention exhibits excellent inhibitory activity and kinase selectivity against a target kinase.

Abstract: An apparatus for processing a wafer is provided. The provided apparatus for processing a wafer includes a chamber, a first nozzle, a negative pressure chamber and a vacuum pump. The first nozzle is arranged in the chamber and configured to spray a drying agent to the wafer. The negative pressure chamber is located in the chamber. The vacuum pump is located outside of the chamber and connected with the negative pressure chamber through a pipeline. The negative pressure chamber is arranged in a direction perpendicular to the wafer, and a gas in the negative pressure chamber is sucked by the vacuum pump through the pipeline to generate a negative pressure in the chamber, so as to reduce a surface pressure of the drying agent sprayed onto the wafer by the first nozzle. A method for controlling processing of a wafer is also provided.

Abstract: There are provided a semiconductor structure and a method for manufacturing the same, and a memory. The method for manufacturing a semiconductor structure includes: providing a stack structure including a first dielectric layer containing a first element; forming a first groove at least penetrating through the first dielectric layer by a first etching process, wherein after the first etching process, a first etch residue is formed in the first groove; forming a first protective layer covering a side wall, at the first dielectric layer, of the first groove; and performing a first cleaning on the stack structure formed with the first protective layer to remove the first etch residue. The first groove is configured for forming a storage cell.

Abstract: A semiconductor structure processing method and forming method are provided. The semiconductor structure processing method includes the steps of: providing a semiconductor substrate, which is provided with feature portions having a mask layer on their top surfaces; ashing a semiconductor structure comprising the semiconductor substrate, the feature portions and the mask layer; removing the mask layer; cleaning the semiconductor structure, and forming an oxide layer on surfaces of the feature portions after the feature portions are cleaned; drying the semiconductor structure; and removing the oxide layer. During drying, one feature portion of at least one group of adjacent feature portions is inclined towards a feature portion adjacent thereto, and a distance between the inclined feature portion and the feature portion adjacent thereto after drying is smaller than a distance there between before drying.

Abstract: A UV based surface disinfection system that consists of the UV light source, a robot arm, and an omni directional mobile base. The mobile robot can be programmed autonomously and be able to bring the UV light source to the centimeters away from surfaces to achieve effective and efficient surface disinfection. The mobile robot can navigate autonomously in a complicated environment to perform disinfection operation in a large area.

Abstract: Embodiments of the present disclosure provide a photoresist removal method and a photoresist removal device. The photoresist removal method includes: providing a substrate and a photoresist located on the substrate; wherein the photoresist includes an inner core layer and an outer shell layer covering a surface of the inner core layer, and a concentration of ions doped in the outer shell layer is greater than a concentration of ions doped in the inner core layer; performing at least one shelling treatment on the photoresist, until the outer shell layer is completely removed; wherein one shelling treatment includes: performing a water vapor treatment on the outer shell layer to soften at least part of the outer shell layer, to form a soft outer shell layer; and removing the soft outer shell layer; and removing the inner core layer after the outer shell layer is completely removed.

Abstract: Disclosed in the present disclosure are a cleaning machine and a cleaning method. The cleaning machine includes: a wet cleaning module, configured to execute a wet cleaning process on a wafer; a dry cleaning module, configured to execute a dry cleaning process on the wafer; a conveying module, configured to input the wafer into the wet cleaning module or the dry cleaning module, or output the wafer from the wet cleaning module or the dry cleaning module; a transferring module, configured to transfer the wafer from the wet cleaning module to the dry cleaning module or transfer the wafer from the dry cleaning module to the wet cleaning module; and a processing module, configured to extract gas from the transferring module.

Abstract: Embodiments of the present application provide a method for processing a semiconductor structure and a method for forming a semiconductor structure. The method for processing a semiconductor structure includes: providing a semiconductor substrate, the semiconductor substrate being provided with a feature portion, the aspect ratio of the feature portion being greater than a preset aspect ratio, a mask layer being provided on the top of the feature portion; ashing a semiconductor structure, the semiconductor structure comprising the semiconductor substrate, the feature portion, and the mask layer; cleaning the semiconductor structure; drying the semiconductor structure; and removing the mask layer.

Abstract: A preparation method of a metal connecting line includes: providing a base, where the base includes a metal conductive structure; patterned etching the base to expose a surface of the metal conductive structure; treating a surface of the base by oxygen-containing plasma to remove a charge on the surface of the metal conductive structure; and cleaning the surface of the metal conductive structure by hydrogen.

Abstract: A method for processing a semiconductor structure includes: a substrate is provided, which has feature parts, in which an aspect ratio of the feature parts is greater than a preset aspect ratio, a barrier layer is disposed on tops of the feature parts, a hydrophilic layer is disposed on side walls of the feature parts, and there are particulate impurities on a surface of the hydrophilic layer; at least one cleaning treatment to the substrate is performed, in which the cleaning treatment includes: initial water vapor is introduced to the side walls of the feature parts, and a cooling treatment is performed to liquefy the initial water vapor adhering to a surface of the hydrophilic layer into water which carries the particulate impurities and flows into grooves; and a heating treatment is performed to evaporate the water into water vapor which carries the particulate impurities and escapes.

Abstract: A semiconductor structure formed by the method for forming the semiconductor structure includes: a substrate, on which an insulating layer is formed; metal conductive layers located on the insulating layer; and an isolation structure located between two adjacent ones of the metal conductive layers.