Patents by Inventor Noah F. Fine Nathel

Noah F. Fine Nathel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • EUV patterning of monolayers for selective atomic layer deposition
    Patent number: 11187983
    Abstract: A patterning method is described that utilizes self-assembled monolayers (SAMs) formed with hydroxamic acid compounds and area selective atomic layer deposition (ALD). In the examples, regions of the SAM exposed to extreme ultraviolet radiation (EUV) become resistant to ALD deposition. Subsequent treatment of the exposed SAM to an ALD process results in selective growth of an ALD film on the non-exposed regions of the SAM, leaving the exposed regions substantially free of ALD material.
    Type: Grant
    Filed: June 26, 2018
    Date of Patent: November 30, 2021
    Assignee: International Business Machines Corporation
    Inventors: Rudy J. Wojtecki, Ekmini A. De Silva, Noel Arellano, Noah F. Fine Nathel
  • Polymerizable self-assembled monolayers for use in atomic layer deposition
    Patent number: 10782613
    Abstract: Self-assembled monolayers (SAMs) were selectively prepared on portions of a substrate surface utilizing compounds comprising a hydrogen-bonding group and polymerizable diacetylene group. The SAMs were photopolymerized using ultraviolet light. The pre-polymerized and polymerized SAMs were more effective barriers against metal deposition in an atomic layer deposition process compared to similar compounds lacking these functional groups.
    Type: Grant
    Filed: April 19, 2018
    Date of Patent: September 22, 2020
    Assignee: International Business Machines Corporation
    Inventors: Rudy J. Wojtecki, Noah F. Fine Nathel, Ekmini A. De Silva
  • EUV PATTERNING OF MONOLAYERS FOR SELECTIVE ATOMIC LAYER DEPOSITION
    Publication number: 20190391494
    Abstract: A patterning method is described that utilizes self-assembled monolayers (SAMs) formed with hydroxamic acid compounds and area selective atomic layer deposition (ALD). In the examples, regions of the SAM exposed to extreme ultraviolet radiation (EUV) become resistant to ALD deposition. Subsequent treatment of the exposed SAM to an ALD process results in selective growth of an ALD film on the non-exposed regions of the SAM, leaving the exposed regions substantially free of ALD material.
    Type: Application
    Filed: June 26, 2018
    Publication date: December 26, 2019
    Inventors: Rudy J. Wojtecki, Ekmini A. De Silva, Noel Arellano, Noah F. Fine Nathel
  • POLYMERIZABLE SELF-ASSEMBLED MONOLAYERS FOR USE IN ATOMIC LAYER DEPOSITION
    Publication number: 20190322812
    Abstract: Self-assembled monolayers (SAMs) were selectively prepared on portions of a substrate surface utilizing compounds comprising a hydrogen-bonding group and polymerizable diacetylene group. The SAMs were photopolymerized using ultraviolet light. The pre-polymerized and polymerized SAMs were more effective barriers against metal deposition in an atomic layer deposition process compared to similar compounds lacking these functional groups.
    Type: Application
    Filed: April 19, 2018
    Publication date: October 24, 2019
    Inventors: Rudy J. Wojtecki, Noah F. Fine Nathel, Ekmini A. De Silva