Patents by Inventor Noah J. Tremblay

Noah J. Tremblay has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Graphene device including a PVA layer or formed using a PVA layer
    Patent number: 8735209
    Abstract: An apparatus or method can include forming a graphene layer including a working surface, forming a polyvinyl alcohol (PVA) layer upon the working surface of the graphene layer, and forming a dielectric layer upon the PVA layer. In an example, the PVA layer can be activated and the dielectric layer can be deposited on an activated portion of the PVA layer. In an example, an electronic device can include such apparatus, such as included as a portion of graphene field-effect transistor (GFET), or one or more other devices.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: May 27, 2014
    Assignee: The Trustees of Columbia University in the City of New York
    Inventors: Inanc Meric, Kenneth Shepard, Noah J. Tremblay, Philip Kim, Colin P. Nuckolls
  • High-performance gate oxides such as for graphene field-effect transistors or carbon nanotubes
    Patent number: 8445893
    Abstract: An apparatus or method can include forming a graphene layer including a working surface, forming a polyvinyl alcohol (PVA) layer upon the working surface of the graphene layer, and forming a dielectric layer upon the PVA layer. In an example, the PVA layer can be activated and the dielectric layer can be deposited on an activated portion of the PVA layer. In an example, an electronic device can include such apparatus, such as included as a portion of graphene field-effect transistor (GFET), or one or more other devices.
    Type: Grant
    Filed: July 19, 2010
    Date of Patent: May 21, 2013
    Assignee: Trustees of Columbia University in the City of New York
    Inventors: Inanc Meric, Kenneth Shepard, Noah J. Tremblay, Philip Kim, Colin P. Nuckolls
  • HIGH-PERFORMANCE GATE OXIDES SUCH AS FOR GRAPHENE FIELD-EFFECT TRANSISTORS OR CARBON NANOTUBES
    Publication number: 20110017979
    Abstract: An apparatus or method can include forming a graphene layer including a working surface, forming a polyvinyl alcohol (PVA) layer upon the working surface of the graphene layer, and forming a dielectric layer upon the PVA layer. In an example, the PVA layer can be activated and the dielectric layer can be deposited on an activated portion of the PVA layer. In an example, an electronic device can include such apparatus, such as included as a portion of graphene field-effect transistor (GFET), or one or more other devices.
    Type: Application
    Filed: July 19, 2010
    Publication date: January 27, 2011
    Applicant: The Trustees of Columbia University in the City of New York
    Inventors: Inanc Meric, Kenneth Shepard, Noah J. Tremblay, Philip Kim, Colin P. Nuckolls