Patents by Inventor Noble Marshall Johnson

Noble Marshall Johnson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Light emitting devices with inhomogeneous quantum well active regions
    Patent number: 8048703
    Abstract: A method of fabricating a light emitting device includes modulating a crystal growth parameter to grow a quantum well layer that is inhomogeneous and that has a non-random composition fluctuation across the quantum well layer.
    Type: Grant
    Filed: April 7, 2010
    Date of Patent: November 1, 2011
    Assignee: Palo Alto Research Center Incorporation
    Inventors: Christopher L. Chua, Zhihong Yang, John E. Northrup, Noble Marshall Johnson
  • LIGHT EMITTING DEVICES WITH INHOMOGENEOUS QUANTUM WELL ACTIVE REGIONS
    Publication number: 20100197062
    Abstract: A method of fabricating a light emitting device includes modulating a crystal growth parameter to grow a quantum well layer that is inhomogeneous and that has a non-random composition fluctuation across the quantum well layer.
    Type: Application
    Filed: April 7, 2010
    Publication date: August 5, 2010
    Applicant: PALO ALTO RESEARCH CENTER INCORPORATED
    Inventors: CHRISTOPHER L. CHUA, ZHIHONG YANG, JOHN E. NORTHRUP, NOBLE MARSHALL JOHNSON
  • Light emitting devices with inhomogeneous quantum well active regions
    Patent number: 7723719
    Abstract: A method of fabricating a light emitting device includes modulating a crystal growth parameter to grow a quantum well layer that is inhomogeneous and that has a non-random composition fluctuation across the quantum well layer.
    Type: Grant
    Filed: December 14, 2007
    Date of Patent: May 25, 2010
    Assignee: Palo Alto Research Center Incorporated
    Inventors: Christopher L. Chua, Zhihong Yang, John E. Northrup, Noble Marshall Johnson
  • LIGHT EMITTING DEVICES WITH INHOMOGENEOUS QUANTUM WELL ACTIVE REGIONS
    Publication number: 20090152529
    Abstract: A method of fabricating a light emitting device includes modulating a crystal growth parameter to grow a quantum well layer that is inhomogeneous and that has a non-random composition fluctuation across the quantum well layer.
    Type: Application
    Filed: December 14, 2007
    Publication date: June 18, 2009
    Applicant: PALO ALTO RESEARCH CENTER INCORPORATED
    Inventors: Christopher L. Chua, Zhihong Yang, John E. Northrup, Noble Marshall Johnson
  • Semiconductor device having a surface conducting channel and method of forming
    Patent number: 7314801
    Abstract: A semiconductor device including a metal oxide layer, a channel area of the metal oxide layer, a preservation layer formed on the channel area of the metal oxide layer, and at least two channel contacts coupled to the channel area of the metal oxide layer, and a method of forming the same.
    Type: Grant
    Filed: December 20, 2005
    Date of Patent: January 1, 2008
    Assignee: Palo Alto Research Center Incorporated
    Inventors: Peter Kiesel, Oliver Schmidt, Arnd Willy Walter Geis, Noble Marshall Johnson