Abstract: A method for manufacturing a semiconductor device includes laminating a plurality of semiconductor wafers via an adhesive, heating such that the adhesive reaches a specific viscosity, and pressing the semiconductor wafers under a provisional pressure bonding load such that a gap between solder of through-electrodes provided to chip parts and through-electrodes of an adjacent semiconductor wafer falls within a specific range that is greater than zero, to produce a provisional pressure-bonded laminate; cutting the provisional pressure-bonded laminate with a cutter to produce a provisional pressure-bonded laminate chip part; and heating the provisional pressure-bonded laminate chip part to at least curing temperature of the adhesive and at least melting point of the solder, and pressing the provisional pressure-bonded laminate chip part under a main pressure bonding load to produce a main pressure-bonded laminate chip part such that the solder comes into contact with the through-electrodes of adjacent chip parts

Abstract: A method for manufacturing a semiconductor device includes laminating a plurality of semiconductor wafers via an adhesive, heating such that the adhesive reaches a specific viscosity, and pressing the semiconductor wafers under a provisional pressure bonding load such that a gap between solder of through-electrodes provided to chip parts and through-electrodes of an adjacent semiconductor wafer falls within a specific range that is greater than zero, to produce a provisional pressure-bonded laminate; cutting the provisional pressure-bonded laminate with a cutter to produce a provisional pressure-bonded laminate chip part; and heating the provisional pressure-bonded laminate chip part to at least curing temperature of the adhesive and at least melting point of the solder, and pressing the provisional pressure-bonded laminate chip part under a main pressure bonding load to produce a main pressure-bonded laminate chip part such that the solder comes into contact with the through-electrodes of adjacent chip parts

Abstract: Disclosed is a method for producing a semiconductor device in which solder joints are made between a semiconductor chip with bumps and a substrate with electrodes corresponding to the bumps through a thermosetting adhesive layer, the method including the successive steps of: (A) forming a thermosetting adhesive layer in advance on a surface including bumps of the semiconductor chip; (B) laying a surface on the thermosetting adhesive layer side of the semiconductor chip, on which the thermosetting adhesive layer is formed, and a substrate one upon another, followed by pre-bonding using a heat tool to obtain a pre-bonded laminate; and (C) interposing a protective film having a thermal conductivity of 100 W/mK or more between the heat tool and a surface on the semiconductor chip side of the pre-bonded laminate, melting a solder between the semiconductor chips and the substrate and simultaneously curing the thermosetting adhesive layer using the heat tool.

Abstract: This invention is a resin composition for optical wiring, comprising an inorganic filler with an average particle size of 1 nm to 100 nm and a resin, having a ratio nf/nr (where nf is the refractive index of the inorganic filler and nr is the refractive index of the resin) of 0.8 to 1.2, a thermal expansion coefficient of ?1×10?5 /° C. to 4×10?5/° C., and a true dependency value of its refractive index on the temperature of ?1×10?4/° C. to 1×10?4/° C. in a temperature range from ?20° C. to 90° C., and substantially incapable of absorbing light in a wavelength range from 0.6 to 0.9 ?m or from 1.2 to 1.6 ?m. This invention also provides an optoelectronic circuit board.

Abstract: This invention is a resin composition for optical wiring, comprising an inorganic filler with an average particle size of 1 nm to 100 nm and a resin, having a ratio nf/nr (where nf is the refractive index of the inorganic filler and nr is the refractive index of the resin) of 0.8 to 1.2, a thermal expansion coefficient of ?1×10?5/° C. to 4×105/° C., and a true dependency value of its refractive index on the temperature of ?1×10?4/° C. to 1×10?4/° C. in a temperature range from ?20° C. to 90° C., and substantially incapable of absorbing light in a wavelength range from 0.6 to 0.9 ?m or from 1.2 to 1.6 ?m. This invention also provides an optoelectronic circuit board.