Abstract: To improve strength of an imaging module with an adjusted optical axis. An imaging device includes an imaging module and a holding unit. The imaging module provided in the imaging device includes an imaging element that images incident light introduced from an upper surface of a housing. The holding unit provided in the imaging device surrounds and holds a side surface of the imaging module, the side surface being adjacent to the upper surface of the housing. The holding unit surrounds and holds the side surface of the imaging module, thereby protecting the imaging module.

Abstract: To improve strength of an imaging module with an adjusted optical axis. An imaging device includes an imaging module and a holding unit. The imaging module provided in the imaging device includes an imaging element that images incident light introduced from an upper surface of a housing. The holding unit provided in the imaging device surrounds and holds a side surface of the imaging module, the side surface being adjacent to the upper surface of the housing. The holding unit surrounds and holds the side surface of the imaging module, thereby protecting the imaging module.

Abstract: A solid-state image sensing apparatus includes a solid-state image sensing device, signal processing circuit device, and a multi-layer wiring package. The solid-state image sensing device has a pixel in an image sensing area thereof. The pixel receives incident light and generate a signal electric charge. The signal processing circuit device is arranged to face the image sensing area and applies signal processing to a signal output from the solid-state image sensing device. The multi-layer wiring package has wiring layers, the solid-state image sensing device, and the signal processing circuit device. Each of the wiring layers is laminated via an insulator. The multi-layer wiring package is formed such that a first wiring layer provided between the solid-state image sensing device and the signal processing circuit device has a greater thickness than second wiring layers and has heat conductivity higher than or equal to heat conductivity of the second wiring layers.

Abstract: A solid-state imaging device includes an image sensor chip and a signal processing chip, which are electrically connected. A low thermal conductivity region is positioned between the image sensor chip and the signal processing chip. The low thermal conductivity region is configured to insulate the image sensor chip from heat, which may be generated by the signal processing chip.

Abstract: A solid-state image sensing apparatus includes a solid-state image sensing device, signal processing circuit device, and a multi-layer wiring package. The solid-state image sensing device has a pixel in an image sensing area thereof. The pixel receives incident light and generate a signal electric charge. The signal processing circuit device is arranged to face the image sensing area and applies signal processing to a signal output from the solid-state image sensing device. The multi-layer wiring package has wiring layers, the solid-state image sensing device, and the signal processing circuit device. Each of the wiring layers is laminated via an insulator. The multi-layer wiring package is formed such that a first wiring layer provided between the solid-state image sensing device and the signal processing circuit device has a greater thickness than second wiring layers and has heat conductivity higher than or equal to heat conductivity of the second wiring layers.

Abstract: A method for manufacturing a solid-state imaging device. A solid-state image sensor is mounted on the semiconductor package support and electrically connected to first terminals and second terminals by bonding wires. The second terminals to which the bonding wires are connected are sealed with a sealing member. The optically-transparent member is thereafter disposed on the support member and the sealing member. The sealing member is cured to fix the optically transparent member.

Abstract: A solid-state image sensing apparatus includes a solid-state image sensing device, signal processing circuit device, and a multi-layer wiring package. The solid-state image sensing device has a pixel in an image sensing area thereof. The pixel receives incident light and generate a signal electric charge. The signal processing circuit device is arranged to face the image sensing area and applies signal processing to a signal output from the solid-state image sensing device. The multi-layer wiring package has wiring layers, the solid-state image sensing device, and the signal processing circuit device. Each of the wiring layers is laminated via an insulator. The multi-layer wiring package is formed such that a first wiring layer provided between the solid-state image sensing device and the signal processing circuit device has a greater thickness than second wiring layers and has heat conductivity higher than or equal to heat conductivity of the second wiring layers.

Abstract: A solid-state image sensing apparatus includes a solid-state image sensing device, signal processing circuit device, and a multi-layer wiring package. The solid-state image sensing device has a pixel in an image sensing area thereof. The pixel receives incident light and generate a signal electric charge. The signal processing circuit device is arranged to face the image sensing area and applies signal processing to a signal output from the solid-state image sensing device. The multi-layer wiring package has wiring layers, the solid-state image sensing device, and the signal processing circuit device. Each of the wiring layers is laminated via an insulator. The multi-layer wiring package is formed such that a first wiring layer provided between the solid-state image sensing device and the signal processing circuit device has a greater thickness than second wiring layers and has heat conductivity higher than or equal to heat conductivity of the second wiring layers.

Abstract: A solid-state image sensing apparatus includes a solid-state image sensing device, signal processing circuit device, and a multi-layer wiring package. The solid-state image sensing device has a pixel in an image sensing area thereof. The pixel receives incident light and generate a signal electric charge. The signal processing circuit device is arranged to face the image sensing area and applies signal processing to a signal output from the solid-state image sensing device. The multi-layer wiring package has wiring layers, the solid-state image sensing device, and the signal processing circuit device. Each of the wiring layers is laminated via an insulator. The multi-layer wiring package is formed such that a first wiring layer provided between the solid-state image sensing device and the signal processing circuit device has a greater thickness than second wiring layers and has heat conductivity higher than or equal to heat conductivity of the second wiring layers.

Abstract: A solid-state image sensing apparatus includes a solid-state image sensing device, signal processing circuit device, and a multi-layer wiring package. The solid-state image sensing device has a pixel in an image sensing area thereof. The pixel receives incident light and generate a signal electric charge. The signal processing circuit device is arranged to face the image sensing area and applies signal processing to a signal output from the solid-state image sensing device. The multi-layer wiring package has wiring layers, the solid-state image sensing device, and the signal processing circuit device. Each of the wiring layers is laminated via an insulator. The multi-layer wiring package is formed such that a first wiring layer provided between the solid-state image sensing device and the signal processing circuit device has a greater thickness than second wiring layers and has heat conductivity higher than or equal to heat conductivity of the second wiring layers.

Abstract: A solid-state imaging device includes an image sensor chip and a signal processing chip, which are electrically connected. A low thermal conductivity region is positioned between the image sensor chip and the signal processing chip. The low thermal conductivity region is configured to insulate the image sensor chip from heat, which may be generated by the signal processing chip.

Abstract: A method for manufacturing a solid-state imaging device. A solid-state image sensor is mounted on the semiconductor package support and electrically connected to first terminals and second terminals by bonding wires. The second terminals to which the bonding wires are connected are sealed with a sealing member. The optically-transparent member is thereafter disposed on the support member and the sealing member. The sealing member is cured to fix the optically transparent member.

Abstract: There is provided a solid-state imaging device including: a semiconductor package support mounting a solid-state image sensor; bonding wires electrically connecting first terminals formed on the solid-state image sensor and second terminals formed on the semiconductor package support; a sealing member sealing at least the second terminals to which the bonding wires are connected; and an optically-transparent member made of an optically-transparent material and disposed above the solid-state image sensor, in which the optically-transparent member is supported by different support members formed on the semiconductor package support at three or more positions not on a single straight line.

Abstract: Disclosed is a method of producing a liquid crystal display unit, which is capable of shortening, at the time of adhesively bonding and fixing a transparent substrate to a liquid crystal panel, curing time by eliminating any heating treatment, thereby preventing degradation of the display quality and also improving the productivity. The production method is performed by bringing a transparent substrate into close-contact with a liquid crystal panel with a light-curing resin put therebetween, to form an assembly, and irradiating the assembly with ultraviolet light having a wavelength of 340 nm or more, to cure the light-curing resin for a short time. At this time, ultraviolet light having a wavelength ranging from 240 to 450 nm is emitted from an ultraviolet lamp, and an ultraviolet light component having a wavelength of less than 340 nm is shielded by a sharp cut filter.