Abstract: In order to provide a semiconductor device that includes a conductive layer on one surface of a semiconductor substrate with an insulating layer therebetween, a bump on the other surface of the semiconductor substrate, and a through-electrode through the semiconductor substrate connecting the conductive layer with the bump, a through-hole is formed from the other surface of the semiconductor substrate to be connected to the conductive layer, a seed metal film is formed on the through-hole and the other surface, a photoresist is formed thereon, a mask layer is formed by processing the photoresist with a pattern larger than the through-hole, a plated film is grown by electrolytic plating so as to integrally form the through-electrode and a part of the bump.

Abstract: In order to provide a semiconductor device that includes a conductive layer on one surface of a semiconductor substrate with an insulating layer therebetween, a bump on the other surface of the semiconductor substrate, and a through-electrode through the semiconductor substrate connecting the conductive layer with the bump, a through-hole is formed from the other surface of the semiconductor substrate to be connected to the conductive layer, a seed metal film is formed on the through-hole and the other surface, a photoresist is formed thereon, a mask layer is formed by processing the photoresist with a pattern larger than the through-hole, a plated film is grown by electrolytic plating so as to integrally form the through-electrode and a part of the bump.

Abstract: A resist coating method includes a dummy dispensation step for discharging a resist onto a semiconductor substrate in response to a dummy discharge signal, a pre-wet step for applying and then drying a pre-wet solvent on the semiconductor substrate, and a resist coating step for applying the resist onto the semiconductor substrate in response to a resist discharge signal. The resist discharge signal is output at a timing that precedes a predetermined dry time being elapsed by a delay time, which is calculated between the timing for outputting the dummy discharge signal and the timing for actually discharging the resist, thus normally maintaining the predetermined dry time constant. This makes it possible to stably produce pre-wet effects, to improve the uniformity regarding the thickness of a resist film formed on the semiconductor substrate, and to reduce dispersion regarding pre-wet effects between resist coating apparatuses.