Abstract: A measurement tool includes: a measurement tool body including a sample collection unit for collecting a liquid sample by a capillary phenomenon, and a liquid feed channel; and a lid body attachable to and detachable from the measurement tool body. The liquid feed channel includes an upstream side channel and a downstream side channel. A space is defined, into which an upstream side end of the sample collection unit and a downstream side end of the upstream side channel open, when the lid body is attached to the measurement tool body. The downstream side channel is connected to a downstream side end of the sample collection unit. The space is open when the lid body is separated from the measurement tool body, and the space is closed and the upstream side channel and the sample collection unit are connected when the lid body is attached to the measurement tool body.

Abstract: A gas separation system includes: a first gas separation membrane unit; a second gas separation membrane unit; a material gas feed line connected to a gas inlet port of the unit; a first compressor interposed to the line; a first connection line connecting a permeated gas discharge port of the unit and a gas inlet port of the unit; and a second connection line connecting a non-permeated gas discharge port of the unit and the line. The unit and unit each have a gas separation selectivity of 30 or greater. The CH4 recovery rate is 98% or higher. The CO2 content in non-permeated gas of the unit is 5 mol % or less. The flow rate of gas fed to the unit is 60% or less of the flow rate of material gas fed to the unit.

Abstract: A circuit board manufacturing method which includes inserting either a first claw or a second claw through a notch formed by notching an edge of a hole of a wiring board. The first claw and the second claw project outward from a wall portion of a cover member. The cover member is held on the wiring board, by sliding the cover member relative to the wiring board to position the edge of the hole between the first claw and the second claw provided on a surface of the wall portion identical to a surface on which the first claw is provided. The cover member is detached from the wiring board, by sliding the cover member relative to the wiring board to shift the first claw from the component mounting surface side to a soldering surface side with the first claw passing through the notch.

Abstract: The present disclosure provides a manufacturing method. According to this manufacturing method, either a first claw or a second claw is inserted through a notch formed by notching an edge of the hole. The first claw and the second claw are so provided as to project outward from a wall portion of a cover member that covers the body portion of the component from a soldering surface side. The cover member is held on the wiring board, by sliding the cover member relative to the wiring board in a direction along a component mounting surface of the wiring board to position the edge of the hole between the first claw and the second claw provided on a surface of the wall portion identical to a surface on which the first claw is provided. The body portion is inserted into the hole, and an electrode terminal of the body portion is disposed on the wiring board. Solder is applied by flow soldering to the wiring board on which the cover member is held.

Abstract: There is provided an audio processing device including an estimation unit configured to estimate a user's representative perceived position of a stereoscopic image from a difference between a left-eye image and a right-eye image of the stereoscopic image displayed on a display device, and an audio controller configured to control audio output of an audio output device in accordance with the representative perceived position estimated by the estimation unit.

Abstract: In one embodiment of the present invention, a monocrystal SiC epitaxial substrate is produced which includes a monocrystal SiC substrate; a buffer layer made of a first SiC epitaxial film formed on the monocrystal SiC substrate; and an active layer made of a second SiC epitaxial film formed on the buffer layer. The buffer layer is grown by heat-treating a set of the monocrystal SiC substrate, a carbon source plate, and a metal Si melt layer having a predetermined thickness and interposed between the monocrystal SiC substrate and the metal Si melt layer, so as to epitaxially grow monocrystal SiC on the monocrystal SiC substrate. The active layer is grown by epitaxially growing monocrystal SiC on the buffer layer by vapor phase growth method. This allows for production of a monocrystal SiC epitaxial substrate including a high-quality monocrystal SiC active layer being low in defects.

Abstract: A plasma display panel; a scan electrode drive circuit for generating a gently decreasing downward inclined waveform voltage in an initializing period, a gently increasing first inclined waveform voltage, and a second inclined waveform voltage having a steeper gradient than the first inclined waveform voltage and decreasing immediately after the increasing waveform voltage reaches a predetermined potential in the last part of the sustain period. The lowest voltage in the downward inclined waveform voltage is switched at a first voltage, a second voltage higher than the first voltage and a third voltage higher than the second voltage to generate a downward inclined waveform voltage. The lowest voltage is switched according to the detected temperature to generate the downward inclined waveform voltage.

Abstract: A method for fabricating a SiC substrate using metastable solvent epitaxy comprises a Si evaporation step of evaporating a Si melt at an intermediate temperature between a SiC crystal growth temperature and a Si melting point after a crystal growth step of growing an SiC crystal with a predetermined film thickness on the surface of the SiC substrate at the SiC crystal growth temperature. In the method for fabricating the SiC substrate, the ambient pressure in the crystal growth step is higher than the saturated vapor pressure of the Si melt, and the ambient pressure in the Si evaporation step is lower than the saturated vapor pressure of the Si melt. Single-crystal SiC with no large irregularities on the surface thereof can be obtained by using the method.

Abstract: There is provided an audio processing device including an estimation unit configured to estimate a user's representative perceived position of a stereoscopic image from a difference between a left-eye image and a right-eye image of the stereoscopic image displayed on a display device, and an audio controller configured to control audio output of an audio output device in accordance with the representative perceived position estimated by the estimation unit.

Abstract: In the method for driving a plasma display device, the plasma display panel are applied with voltage through the following process. In the first address period where an address discharge is generated on the scan electrodes that belong to the first scan electrode group, the third switching element is turned OFF so as to give a different value of reference voltage between the first and the second scan electrode driving sections. In the second address period where an address discharge is generated on the scan electrodes that belong to the second scan electrode group, the third switching element is turned ON so as to give a same value of reference voltage between the first and the second scan electrode driving sections. In the sustain period where sustain pulses are applied to a plurality of scan electrodes to generate a sustain discharge in the discharge cells, the third switching element is turned ON.

Abstract: In the method for driving a plasma display device, the plasma display panel are applied with voltage through the following process. In the first address period where an address discharge is generated on the scan electrodes that belong to the first scan electrode group, the third switching element is turned OFF so as to give a different value of reference voltage between the first and the second scan electrode driving sections. In the second address period where an address discharge is generated on the scan electrodes that belong to the second scan electrode group, the third switching element is turned ON so as to give a same value of reference voltage between the first and the second scan electrode driving sections. In the sustain period where sustain pulses are applied to a plurality of scan electrodes to generate a sustain discharge in the discharge cells, the third switching element is turned ON.

Abstract: In one embodiment of the present invention, a monocrystal SiC epitaxial substrate is produced which includes a monocrystal SiC substrate; a buffer layer made of a first SiC epitaxial film formed on the monocrystal SiC substrate; and an active layer made of a second SiC epitaxial film formed on the buffer layer. The buffer layer is grown by heat-treating a set of the monocrystal SiC substrate, a carbon source plate, and a metal Si melt layer having a predetermined thickness and interposed between the monocrystal SiC substrate and the metal Si melt layer, so as to epitaxially grow monocrystal SiC on the monocrystal SiC substrate. The active layer is grown by epitaxially growing monocrystal SiC on the buffer layer by vapor phase growth method. This allows for production of a monocrystal SiC epitaxial substrate including a high-quality monocrystal SiC active layer being low in defects.

Abstract: A plasma display panel; a scan electrode drive circuit for generating a gently decreasing downward inclined waveform voltage in an initializing period, a gently increasing first inclined waveform voltage in an initializing period of at least one subfield in one field period, and a second inclined waveform voltage having a steeper gradient than the first inclined waveform voltage and decreasing immediately after the increasing waveform voltage reaches a predetermined potential in the last part of the sustain period; and a panel temperature detecting circuit are provided. The lowest voltage in the downward inclined waveform voltage is switched at a first voltage, a second voltage higher than the first voltage and a third voltage higher than the second voltage to generate a downward inclined waveform voltage. The lowest voltage is switched according to the temperature detected by the panel temperature detecting circuit to generate the downward inclined waveform voltage.

Abstract: A program cooperative system (cooperative simulation system), including a number of application programs, can easily modify the combination of application programs to be used according to purpose and realizes excellent throughput by comprising a database memory server memorizing and relaying data; a plurality of simulation tools each of which includes a cooperative module for writing data into and reading data from the database memory server; and a administrating unit setting the database memory server and the plurality of simulation tools and administrating operations performed by the database memory server and the plurality of simulation tools, wherein simulation is executed by the plurality of simulation tools in cooperation with one another. Consequently, the cooperation can be established at the same speed as a memory access speed.

Abstract: A method of diagnosing nutritious condition of crop in a plant field is disclosed.

Abstract: From the crop of a predetermined area in a plant field under exposure to natural light, a reflectivity of the light having relation to crop information such as nitrogen content rate is measured by a camera; the crop information as first crop information is obtained from the first crop related formula established in advance for obtaining the crop information from the reflectivity; light is irradiated on crop leaf blades in the same area as the predetermined area and an amount of the light is measured; the crop information as second crop information is obtained from the second crop related formula established in advance for obtaining the crop information from the amount of the light; differences are calculated from the first crop information and the second crop information; the first crop information is obtained from the unknown crop in the predetermined area within the crop field of the same area; the first crop information is corrected based on the differences; and the nutritious diagnosis of the crop in the

Abstract: A method and an apparatus for determining an amount of fertilizer to be applied to grain crops are disclosed. A fertilizer application related formula for obtaining the necessary amount of fertilizer to be applied is established by analyzing growth information including leaf blade information, fertilizer application information and quality information, all the above information being obtained in advance from a number of grains or grain crops. The formula thus established is stored in the memory. The necessary amount of fertilizer to be applied for each specific period for grain crops which are presently under growth is calculated by applying to the above formula, growth information of the grain crops presently under growth and target quality information. The growth information includes leaf blade information in relation to a specific period. The results of the calculation are displayed or printed out.

Abstract: A method and an apparatus are provided for estimating a quality of grains to be harvested from a grain plant in the future, during a growth period prior to the harvesting. The method comprises the step for establishing a quality conversion coefficient for estimating a specific quality of grains after the harvesting based on absorbencies relating to the specific quality of the grains obtained by irradiating light having predetermined wavelength regions on a leaf of a grain plant in growth at a predetermined time during the growth period of the grain plant and the specific quality obtained from the same grains after the harvesting, and the step for estimating the quality of the grains to be harvested in the future based on said quality conversion coefficient and absorbencies relating to said specific quality obtained from a leaf of the grain plant presently growing at the predetermined time.

Abstract: A content measuring apparatus has a light source for irradiating near infrared light on a leaf, a light intensity detecting device for receiving transmitted light from the leaf, an operation means for calculating the light absorbance of the leaf from the intensity of transmitted light and computing a content percent of the leaf based on a content percent estimation equation.