Abstract: A radiation-sensitive resin composition includes an acid-labile group-containing resin, and a compound shown by the following general formula (i). R1 represents a hydrogen atom or the like, R2 represents a single bond or the like, R3 represents a linear or branched unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms or the like, and X+ represents an onium cation.

Abstract: A method for forming a pattern includes providing a first positive-working radiation-sensitive resin composition on a substrate to form a first resist layer. The first positive-working radiation-sensitive resin composition includes a crosslinking agent, a polymer containing an acid-unstable group and not containing a crosslinking group, a radiation-sensitive acid generator, and a solvent. The first resist layer is exposed selectively to radiation, and developed to form a first resist pattern. The first resist pattern is made inactive to radiation, or insolubilized in an alkaline developer or in a second positive-working radiation-sensitive resin composition. The second positive-working radiation-sensitive resin composition is provided on the substrate to form a second resist layer. The second resist layer is exposed selectively to radiation, and developed to form a second resist pattern in the space area of the first resist pattern.

Abstract: A radiation-sensitive composition includes a low-molecular-weight compound, a solvent and a radiation-sensitive acid-generator other than the low-molecular-weight compound. The low-molecular-weight compound has one or more acid-dissociable groups which decompose by an action of an acid to enhance solubility in an alkaline developing solution and one or more radiation-sensitive acid-generating groups which generate an acid upon application of an active ray or radiation per molecule. The low-molecular-weight compound has a polystyrene-reduced number-average molecular weight (Mn) measured by gel permeation chromatography (GPC) of 500 to 4,000. The low-molecular-weight compound is not obtained from chain growth polymerization of a monomer with an unsaturated bond. A content of the low-molecular-weight compound is 80 mass % or more of 100 mass % of a total solid component of the radiation-sensitive composition. The low-molecular-weight compound is a compound shown by a following formula (1).

Abstract: A compound is shown by a following formula (1), wherein R1 represents a hydrogen atom, a methyl group, or a trifluoromethyl group, R2 represents a methylene group, an ethylene group, a 1-methylethylene group, a 2-methylethylene group, a divalent alicyclic hydrocarbon group having 4 to 20 carbon atoms, or a derivative thereof, each of R3 represents at least one of a monovalent alicyclic hydrocarbon group having 4 to 20 carbon atoms, a derivative thereof, and a linear or branched alkyl group having 1 to 4 carbon atoms, provided that two of R3 may bond to form a divalent alicyclic hydrocarbon group having 4 to 20 carbon atoms or a derivative thereof together with the carbon atom that is bonded thereto, and X represents a linear or branched fluoroalkylene group having 1 to 20 carbon atoms.

Abstract: A compound has a following general formula (1). R0 represents an (n+1)-valent linear or branched aliphatic hydrocarbon group having 1 to 10 carbon atoms, or the like. R1 represents a hydrogen atom, a methyl group, or a trifluoromethyl group. R2 represents a single bond or the like. R3 represent a linear or branched alkyl group having 1 to 4 carbon atoms or the like. X represents a linear or branched fluoroalkylene group having 1 to 10 carbon atoms, and n is an integer from 1 to 5.

Abstract: A radiation-sensitive resin composition includes a first polymer including a repeating unit represented by a following formula (I). X+ is an onium cation. X+ in the formula (I) is preferably an onium cation represented by a following formula (1-1), an onium cation represented by a following formula (1-2) or a combination thereof.

Abstract: A pattern forming method includes providing and curing a under-layer film containing a radiation-sensitive acid generator which generates an acid upon exposure to radiation on a substrate. The under-layer film is irradiated with radiation through a mask to cause an acid to be selectively generated in an exposed area of the under-layer film. An upper-layer film which does not contain a radiation-sensitive acid generator and which contains a composition capable of polymerizing or crosslinking by an action of an acid is provided. A cured film is provided by polymerization or crosslinking selectively in an area of the upper-layer film corresponding to the exposed area of the under-layer film in which the acid has been generated. An area of the upper-layer film corresponding to an area of the under-layer film in which the acid has not been generated is removed.

Abstract: A radiation-sensitive composition contains (A) a low-molecular-weight compound having one or more acid-dissociable groups which decompose by the action of an acid to enhance solubility in an alkaline developing solution and one or more radiation-sensitive acid-generating groups which generate an acid upon application of an active ray or radiation per molecule, and having a polystyrene-reduced number-average molecular weight (Mn) measured by gel permeation chromatography (GPC) of 500 to 4,000, and (B) a solvent.

Abstract: A radiation-sensitive resin composition which has high transparency to radiation, excelling in basic properties as a resist such as sensitivity, resolution, and pattern shape, and, in particular, exhibiting high resolution performance, excellent DOF and LER, and high resistance to a liquid medium used in liquid immersion lithography is provided. Also provided are a polymer which can be used in the composition, a novel compound useful for synthesizing the polymer, and a method of producing the composition.

Abstract: A pattern forming method includes providing and curing a under-layer film containing a radiation-sensitive acid generator which generates an acid upon exposure to radiation on a substrate. The under-layer film is irradiated with radiation through a mask to cause an acid to be selectively generated in an exposed area of the under-layer film. An upper-layer film which does not contain a radiation-sensitive acid generator and which contains a composition capable of polymerizing or crosslinking by an action of an acid is provided. A cured film is provided by polymerization or crosslinking selectively in an area of the upper-layer film corresponding to the exposed area of the under-layer film in which the acid has been generated. An area of the upper-layer film corresponding to an area of the under-layer film in which the acid has not been generated is removed.

Abstract: A method for forming a pattern contains (1) a step of forming an underlayer film containing (A) a radiation-sensitive acid generator capable of generating an acid upon exposure to radiation rays or (B) a radiation-sensitive base generator capable of generating a base upon exposure to radiation rays on a substrate; (2) a step of irradiating the underlayer film with radiation rays through a mask with a predetermined pattern to obtain an exposed underlayer film portion having been selectively exposed through the predetermined pattern; (3) a step of forming (C) an organic thin film on the underlayer film so as to attain chemical bonding of the exposed underlayer film portion with the organic thin-film formed on the exposed underlayer film portion; and (4) a step of removing the organic thin film formed on areas of the underlayer film other than the exposed underlayer film portion.

Abstract: A compound has a following general formula (1). R0 represents an (n+1)-valent linear or branched aliphatic hydrocarbon group having 1 to 10 carbon atoms, or the like. R1 represents a hydrogen atom, a methyl group, or a trifluoromethyl group. R2 represents a single bond or the like. R3 represent a linear or branched alkyl group having 1 to 4 carbon atoms or the like. X represents a linear or branched fluoroalkylene group having 1 to 10 carbon atoms, and n is an integer from 1 to 5.

Abstract: A radiation-sensitive resin composition includes an acid-labile group-containing resin, and a compound shown by the following general formula (i). R1 represents a hydrogen atom or the like, R2 represents a single bond or the like, R3 represents a linear or branched unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms or the like, and X+ represents an onium cation.

Abstract: A radiation-sensitive resin composition includes a first polymer including a repeating unit represented by a following formula (I). X+ is an onium cation. X+ in the formula (I) is preferably an onium cation represented by a following formula (1-1), an onium cation represented by a following formula (1-2) or a combination thereof.

Abstract: A pattern formation method suitable for forming micro-patterns using electron beams (EB), X-rays, or extreme ultraviolet radiation (EUV) is provided.

Abstract: A radiation-sensitive resin composition for liquid immersion lithography includes a resin component, a photoacid generator and a solvent. The resin component includes an acid-dissociable group-containing resin in an amount of more than 50% by mass. The acid-dissociable group-containing resin includes a repeating unit that includes a fluorine atom and an acid-dissociable group in a side chain of the repeating unit.

Abstract: A compound is shown by a following formula (1), wherein R1 represents a hydrogen atom, a methyl group, or a trifluoromethyl group, R2 represents a methylene group, an ethylene group, a 1-methylethylene group, a 2-methylethylene group, a divalent alicyclic hydrocarbon group having 4 to 20 carbon atoms, or a derivative thereof, each of R3 represents at least one of a monovalent alicyclic hydrocarbon group having 4 to 20 carbon atoms, a derivative thereof, and a linear or branched alkyl group having 1 to 4 carbon atoms, provided that two of R3 may bond to form a divalent alicyclic hydrocarbon group having 4 to 20 carbon atoms or a derivative thereof together with the carbon atom that is bonded thereto, and X represents a linear or branched fluoroalkylene group having 1 to 20 carbon atoms.

Abstract: A method for forming a pattern contains (1) a step of forming an underlayer film containing (A) a radiation-sensitive acid generator capable of generating an acid upon exposure to radiation rays or (B) a radiation-sensitive base generator capable of generating a base upon exposure to radiation rays on a substrate; (2) a step of irradiating the underlayer film with radiation rays through a mask with a predetermined pattern to obtain an exposed underlayer film portion having been selectively exposed through the predetermined pattern; (3) a step of forming (C) an organic thin film on the underlayer film so as to attain chemical bonding of the exposed underlayer film portion with the organic thin-film formed on the exposed underlayer film portion; and (4) a step of removing the organic thin film formed on areas of the underlayer film other than the exposed underlayer film portion.

Abstract: A method of patterning using double exposure patterning in a liquid immersion lithographic process is provided. The patterning method comprises a step of forming a first pattern on a substrate using a first resist layer forming composition, a step of making the first pattern inactive, a step of forming a second pattern on a substrate on which a pattern has been formed using a second resist layer forming composition and exposing the second resist layer to radiation, and a step of developing the exposed resist layer to form a second pattern in the space area of the first pattern. The first resist layer forming composition contains a cross-linking agent which accelerates conversion of the first layer from positive-working to negative-working.

Abstract: A radiation-sensitive resin composition which has high transparency to radiation, excelling in basic properties as a resist such as sensitivity, resolution, and pattern shape, and, in particular, exhibiting high resolution performance, excellent DOF and LER, and high resistance to a liquid medium used in liquid immersion lithography is provided. Also provided are a polymer which can be used in the composition, a novel compound useful for synthesizing the polymer, and a method of producing the composition.