Abstract: A semiconductor device includes: a semiconductor element; a case; a terminal made of a conductive material and embedded in the case, a part of the terminal being exposed to the outside, having an outermost surface that includes a first film, and having a base portion; a bonding wire that is connected to the first film and electrically connects the semiconductor element and the terminal; and a protection member that is more flexible than the case and covers a contact portion of the terminal contacting with the bonding wire. The first film is removed from an area around the contact portion with the bonding wire in the part of the terminal being exposed to the outside, causing the base portion to be exposed. An exposed portion of the base portion and the protection member adhere to each other.

Abstract: A semiconductor device includes: a semiconductor element; a case; a terminal made of a conductive material and embedded in the case, a part of the terminal being exposed to the outside, having an outermost surface that includes a first film, and having a base portion; a bonding wire that is connected to the first film and electrically connects the semiconductor element and the terminal; and a protection member that is more flexible than the case and covers a contact portion of the terminal contacting with the bonding wire. The first film is removed from an area around the contact portion with the bonding wire in the part of the terminal being exposed to the outside, causing the base portion to be exposed. An exposed portion of the base portion and the protection member adhere to each other.

Abstract: In the normal rotation direction, a change in the main sensing signal caused by a front edge is defined as a signal change caused by an effective edge, and a change in the main sensing signal caused by a back edge is defined as a signal change caused by an ineffective edge. In the reverse direction, a change in the main sensing signal caused by the back edge is defined as a signal change caused by an effective edge, and a change caused by a front edge is defined as a signal change caused by an ineffective edge. Regardless of the rotation direction, a detection signal generating circuit generates a detection signal including falling-edge changes and rising edge changes caused by the effective edge and ineffective edge respectively. When the direction is changed, the signal change on the detection signal is prohibited. As a result, gear tooth detection discrepancies are prevented.

Abstract: A peak voltage detector circuit detects a peak voltage of an input voltage. The input voltage is input into a first input terminal of a comparator. A counter circuit counts up a counter value in synchronization with a first clock signal, when a signal output from the comparator is in a first state. The counter circuit counts down the counter value in synchronization with a second clock signal. A digital-analog conversion circuit outputs an output voltage corresponding to the counter value, and the output voltage is input into a second input terminal of the comparator. The first clock signal has a wave period shorter than that of the second clock signal.

Abstract: In the normal rotation direction, a change in the main sensing signal caused by a front edge is defined as a signal change caused by an effective edge, and a change in the main sensing signal caused by a back edge is defined as a signal change caused by an ineffective edge. In the reverse direction, a change in the main sensing signal caused by the back edge is defined as a signal change caused by an effective edge, and a change caused by a front edge is defined as a signal change caused by an ineffective edge. Regardless of the rotation direction, a detection signal generating circuit generates a detection signal including falling-edge changes and rising edge changes caused by the effective edge and ineffective edge respectively. When the direction is changed, the signal change on the detection signal is prohibited. As a result, gear tooth detection discrepancies are prevented.

Abstract: The present invention reliably removes a signal change associated with a noise component from a comparison signal of a comparator. A comparator circuit includes a comparator and a timer circuit. After a reversal of the comparison signal, if the level of the comparator is sustained at least from a first time to a second time, an output signal is reversed and output. The timer circuit includes a memory unit that is shifted to a memory state in which the reversal of the comparison signal is stored at the first time if the reversal is verified. If the comparison signal is reversed during the interval between the first time and second time, the memory state is cleared.

Abstract: A peak voltage detector circuit detects a peak voltage of an input voltage. The input voltage is input into a first input terminal of a comparator. A counter circuit counts up a counter value in synchronization with a first clock signal, when a signal output from the comparator is in a first state. The counter circuit counts down the counter value in synchronization with a second clock signal. A digital-analog conversion circuit outputs an output voltage corresponding to the counter value, and the output voltage is input into a second input terminal of the comparator. The first clock signal has a wave period shorter than that of the second clock signal.

Abstract: A reference voltage generating circuit is constituted by resistors RE and RF each having a resistance not influenced by an application of pressure. The reference voltage generating circuit is connected between one and the other ends of a bridge circuit. A failure judgement of the bridge circuit is performed based on a comparison of a voltage difference VBC between two midpoints B and C of the bridge circuit and voltage differences VCE and VBE between a reference voltage level of the reference voltage generating circuit and the voltage levels of two midpoints B and C.

Abstract: A sensor device includes a sensor circuit for measuring a physical amount such as pressure, a voltage detector for detecting a voltage actually supplied to the sensor circuit, and an oscillator for generating an oscillating signal when the voltage detector finds the voltage supplied to the sensor circuit is abnormally low. The sensor signal and the oscillating signal are selectively supplied to a controller. The controller controls various devices connected thereto based on the sensor signal, while it detects a malfunction of the sensor device based on either a high level signal or a low level signal in the oscillating signal. Thus, the malfunction of the sensor device is automatically detected without fail.

Abstract: A pressure-detecting device in which a pressure sensor unit having the same specifications can be used even when there are numerous different forms of an outside member to which connection leads of the pressure sensor unit are to be electrically connected. A pressure sensor unit has four connection leads exiting a sensor housing. A coupling member has a terminal holding part and a connector part molded integrally from an insulating material and having insert-molded coupling leads. The coupling leads have terminal plates, all exposed on the same side, and terminal pieces projecting outwardly. Multiple versions of the coupling member are made by integrally joining connector parts of different shapes to terminal holding parts all having terminal plates disposed in the same state. The pressure sensor unit is assembled to a coupling member selected from among these and the connection leads are electrically connected to an outside member by way of this coupling member.

Abstract: A sensor apparatus which can accurately detect a fault due to poor connection or the like at a connection portion between a sensor portion and a control portion. The sensor apparatus is provided with a sensor portion and a control portion which is electrically connected to the sensor portion via a power supply line, an output line and a ground line. The control portion includes a switch and the diagnosis circuit. The switch switches the power supply to the sensor portion to one of the power supply line and the output line. When the power is supplied to the output line, the diagnosis circuit measures current flowing from the output line to the ground line, and detects the fault by comparing the measured current with a reference voltage value.

Abstract: A diffusion gauge is formed in a surface of a silicon substrate which has a plane orientation of (110). The diffusion gauge is disposed so that a main current thereof flows along a <110> direction perpendicular to a direction in which large stress biased in one direction generates in the surface of the silicon substrate due to distortion of a base for fixing the silicon substrate. Therefore, even when the large biased stress generates in the surface of the silicon substrate, because the <110> direction in which the main current of the diffusion gauge flows is perpendicular to the direction in which the biased stress generates, there is a little change in a resistance value of the diffusion gauge. As a result, a detection error caused by the distortion of the base can be reduced.

Abstract: When a diaphragm portion of the pressure sensor or the like is fabricated, anisotropic etching is needed. This etching is carried out by electrochemically stopped etching. During this process, a voltage is applied to the diaphragm portion. A diode is connected between said diaphragm portion and an integrated circuit to prevent the voltage from being applied to the integrated circuit connected with the diaphragm portion. The diode is obtained by shorting the base and collector of a lateral p-n-p transistor to each other. A collector region is formed offset from immediately under a conductor pattern to prevent a parasitic MOS effect from producing a channel serving as a leakage current path. Further, a heavily doped n-type diffused region acting as a channel stopper is formed along the outer periphery of the collector region.

Abstract: A semiconductor pressure detection device includes a diaphragm formed at a portion of a P- conductivity type semiconductor substrate having a reduced thickness. Gauge resistors are formed on the surface of an N- conductivity type semiconductor layer formed on the substrate. An N+ conductivity type diffusion layer is formed in the N- conductivity type semiconductor layer to fix the electric potential of the N- conductivity type layer. The first conductivity type area surrounds the diaphragm. Therefore, when the N- conductivity type area is supplied with electric potential, the potential gradient in the N- conductivity type layer is small. Thus, the leakage current which flows to a pn junction between the gauge resistors and the N- conductivity type area is reduced.

Abstract: A semiconductor pressure sensor includes a diaphragm of an octagonal shape formed on a (110) silicon substrate by anisotropic etching. When a distance between two sides of the diaphragm, which are defined by intersecting lines of a (110) face and a (111) face of the silicon substrate, is represented as L1 and a length of a side of the diaphragm, which is defined by an intersecting line of the (110) face and a (100) face, is represented as L2, the diaphragm is formed so as to satisfy the following relationship:0.65<L2/L1<1.As a result, it is possible to eliminate substantially a non-linear component of the temperature characteristics of an offset voltage generated by the pressure sensor.