Abstract: The pH/redox potential-adjusted water production apparatus includes a supply line for ultrapure water, which is provided with a platinum group metal-supporting resin column. The ultrapure water supply line is branched downstream into a first adjusted water production line and a second adjusted water production line. The first adjusted water production line communicates with a pH adjuster tank and a redox potential adjuster tank, and a first reservoir is provided downstream from them. The second adjusted water production line communicates with a pH adjuster tank and a redox potential adjuster tank, and a second reservoir is provided downstream from them. With such a pH/redox potential-adjusted water production apparatus, it is possible to dissolve a predetermined amount of wiring metal in a wiring production step for semiconductors in which a transition metal such as cobalt is used as the wiring metal.

Abstract: A production device for pH/redox potential-adjusted water (1) of the present invention includes a platinum group metal-supporting resin column (3) that is provided in a supply line (2) of ultrapure water (W) and a pH adjuster tank (4) and a redox potential adjuster tank (5) that are provided downstream the platinum group metal-supporting resin column (3). A membrane-type degassing device (6) is provided downstream them, and a gas-dissolving membrane (7) is disposed downstream the membrane-type degassing device (6). A cleaning water quality monitoring mechanism including a pH meter, an ORP meter, and an inert gas concentration measuring means is provided downstream the gas-dissolving membrane (7) of the supply line (2). The cleaning water quality monitoring mechanism is connected to a control means (not illustrated).

Abstract: Wafer cleaning water supply device (1) has a wafer cleaning water production unit (2) that prepares wafer cleaning water (W1) from ultrapure water (W) supplied from a supply path (5), a reservoir (3) for the prepared wafer cleaning water, and a wafer cleaning water supply pipe (6) that supplies the wafer cleaning water (W1) stored in the reservoir (3) to a cleaning nozzle (4A) of a cleaning machine (4). A return pipe (7) is connected to the wafer cleaning water supply pipe (6) on the cleaning machine (4) side so as to be branched at a distance (t) from the tip of the cleaning nozzle (4A), and the wafer cleaning water (W1) which is excessive in the cleaning machine (4) can be returned to the reservoir (3). Such a wafer cleaning water supply device can reduce excessive wafer cleaning water.

Abstract: An apparatus has a platinum group metal carrying resin column provided in a supply line of ultrapure water, and has a pH adjuster injection device and a redox potential adjuster injection device provided in a later stage thereof. The apparatus has a membrane-type deaeration apparatus and a gas dissolving membrane apparatus sequentially provided in a later stage of the devices, and a discharge line communicates with the gas dissolving membrane apparatus. A pH meter and an ORP meter are each provided at some midpoint in the discharge line, and the pH meter and the ORP meter are connected to a control device. Then, the control device controls the amount of adjusters to be injected from the pH adjuster injection device and the redox potential adjuster injection device, on the basis of the measurement results of the pH meter and the ORP meter.

Abstract: A diluted chemical liquid production apparatus has a structure that has a platinum group metal carrying resin column, a membrane-type deaeration apparatus and a gas dissolving membrane apparatus, which are sequentially provided in a supply line of ultrapure water; and has a pH adjuster injection device and an oxidation-reduction potential adjuster injection device, which are provided between the platinum group metal carrying resin column and the membrane-type deaeration apparatus. An inert gas source is connected to a gaseous phase side of the membrane-type deaeration apparatus, and an inert gas source is also connected to the gaseous phase side of the gas dissolving membrane apparatus; and a discharge line communicates with the gas dissolving membrane apparatus. A pH meter and an ORP meter are provided in the discharge line. Such a diluted chemical liquid production apparatus can control a pH and an oxidation-reduction potential.

Abstract: A cleaning water supply device includes an ultrapure water line through which ultrapure water flows by a fixed amount, a production unit that produces cleaning water by adding a solute to the ultrapure water line by a fixed amount, a cleaning water line for causing the cleaning water to flow, cleaning machines to which the cleaning water is supplied from the cleaning water line, a solute removal unit into which excess cleaning water is introduced from the cleaning water line, and a collecting line for returning collected water from which the solute is removed to a tank and the like.

Abstract: A cleaning water supply device includes an ultrapure water line through which ultrapure water flows by a fixed amount, a production unit that produces cleaning water by adding a solute to the ultrapure water line by a fixed amount, a storage tank for the cleaning water, cleaning machines to which the cleaning water is supplied from the storage tank, and a controller that controls the cleaning water production unit so that a water level in the storage tank is in a predetermined range.

Abstract: A dilute chemical solution producing apparatus includes, in a supply line of ultrapure water, a platinum group metal carrying resin column, a membrane-type deaeration apparatus, and a gas dissolving membrane apparatus, and a washing chemical solution injection apparatus is provided between the platinum group metal carrying resin column and the membrane-type deaeration apparatus. An inert gas source is connected to a gas phase side of the membrane-type deaeration apparatus, and an inert gas source is also connected to a gas phase side of the gas dissolving membrane apparatus. A discharge line communicates with the gas dissolving membrane apparatus. With such a dilute chemical solution producing apparatus, a dilute chemical solution with both dissolved oxygen and dissolved hydrogen peroxide being removed can be safely produced and supplied in a washing step for semiconductor washing.

Abstract: A cleaning water supply device includes an ultrapure water line through which ultrapure water flows by a fixed amount, a production unit that produces cleaning water by adding a solute to the ultrapure water line by a fixed amount, a storage tank for the cleaning water, cleaning machines to which the cleaning water is supplied from the storage tank, and a controller that controls the cleaning water production unit so that a water level in the storage tank is in a predetermined range.

Abstract: An apparatus has a platinum group metal carrying resin column provided in a supply line of ultrapure water, and has a pH adjuster injection device and a redox potential adjuster injection device provided in a later stage thereof. The apparatus has a membrane-type deaeration apparatus and a gas dissolving membrane apparatus sequentially provided in a later stage of the devices, and a discharge line communicates with the gas dissolving membrane apparatus. A pH meter and an ORP meter are each provided at some midpoint in the discharge line, and the pH meter and the ORP meter are connected to a control device. Then, the control device controls the amount of adjusters to be injected from the pH adjuster injection device and the redox potential adjuster injection device, on the basis of the measurement results of the pH meter and the ORP meter.

Abstract: A cleaning water supply device includes an ultrapure water line through which ultrapure water flows by a fixed amount, a production unit that produces cleaning water by adding a solute to the ultrapure water line by a fixed amount, a cleaning water line for causing the cleaning water to flow, cleaning machines to which the cleaning water is supplied from the cleaning water line, a solute removal unit into which excess cleaning water is introduced from the cleaning water line, and a collecting line for returning collected water from which the solute is removed to a tank and the like.

Abstract: A diluted chemical liquid production apparatus has a structure that has a platinum group metal carrying resin column 2, a membrane-type deaeration apparatus 3 and a gas dissolving membrane apparatus 4, which are sequentially provided in a supply line 1 of ultrapure water W; and has a pH adjuster injection device 5A and an oxidation-reduction potential adjuster injection device 5B, which are provided between the platinum group metal carrying resin column 2 and the membrane-type deaeration apparatus 3. An inert gas source 6 is connected to a gaseous phase side of the membrane-type deaeration apparatus 3, and an inert gas source 7 is also connected to the gaseous phase side of the gas dissolving membrane apparatus 4; and a discharge line 8 communicates with the gas dissolving membrane apparatus 4. A pH meter 10A and an ORP meter 10B are provided in the discharge line 8. Such a diluted chemical liquid production apparatus can control a pH and an oxidation-reduction potential.

Abstract: In a step of washing Ge, SiGe or germanide layers in the production of semiconductor devices, resists or metal residues are efficiently removed through washing without dissolving Ge, SiGe or germanides. A sulfuric acid solution with a sulfuric acid concentration of 90 wt % or more and an oxidant concentration of 200 g/L or less is used as a washing liquid. Examples of the washing liquid include an electrolytic solution obtained by electrolysis of the sulfuric acid solution, a solution obtained by mixing hydrogen peroxide with the acid solution or a solution obtained by dissolving an ozone gas in the sulfuric acid solution. A treatment temperature during the washing is preferably 50° C. or less.

Abstract: A dilute chemical solution producing apparatus includes, in a supply line of ultrapure water, a platinum group metal carrying resin column, a membrane-type deaeration apparatus, and a gas dissolving membrane apparatus, and a washing chemical solution injection apparatus is provided between the platinum group metal carrying resin column and the membrane-type deaeration apparatus. An inert gas source is connected to a gas phase side of the membrane-type deaeration apparatus, and an inert gas source is also connected to a gas phase side of the gas dissolving membrane apparatus. A discharge line communicates with the gas dissolving membrane apparatus. With such a dilute chemical solution producing apparatus, a dilute chemical solution with both dissolved oxygen and dissolved hydrogen peroxide being removed can be safely produced and supplied in a washing step for semiconductor washing.