Patents by Inventor Nobumasa Suzuki
Nobumasa Suzuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8048112Abstract: The fixing apparatus includes a pressure fixing device to pressure fix a rod to a circular arc rod engagement portion, and small protruding portions that bite into the rod and have an acute angle in both end sides of the rod engagement portion outside of the pressure fixing device. A recess surface of the circular arc rod engagement portion between the small protruding portions is formed as a rough surface.Type: GrantFiled: September 11, 2003Date of Patent: November 1, 2011Assignee: Showa IKA Kohgyo Co., Ltd.Inventors: Nobumasa Suzuki, Yutaka Nohara, Shinnosuke Nakahara, Shigenobu Sato, Kazumasa Ueyama, Kazuhiro Hasegawa, Kazuya Oribe, Hiroshi Takamido
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Patent number: 8012822Abstract: A process for forming dielectric films containing at least metal atoms, silicon atoms, and oxygen atoms on a silicon substrate comprises a first step of oxidizing a surface portion of the silicon substrate to form a silicon dioxide film; a second step of forming a metal film on the silicon dioxide film in a non-oxidizing atmosphere; a third step of heating in a non-oxidizing atmosphere to diffuse the metal atoms constituting the metal film into the silicon dioxide film; and a fourth step of oxidizing the silicon dioxide film containing the diffused metal atoms to form the film containing the metal atoms, silicon atoms, and oxygen atoms.Type: GrantFiled: December 23, 2008Date of Patent: September 6, 2011Assignees: Canon Kabushiki Kaisha, Canon Anelva CorporationInventors: Naomu Kitano, Yusuke Fukuchi, Nobumasa Suzuki, Hideo Kitagawa
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Patent number: 7982381Abstract: An electron source including: a plurality of electron-emitting devices connected to a matrix wiring of scan lines and modulation lines on a substrate, wherein each of the electron-emitting devices includes a cathode electrode connected to the scan line, a gate electrode connected to the modulation line and a plurality of electron-emitting members, the cathode electrode is configured in a first comb-like structure for applying an electric potential of the cathode to the plurality of electron-emitting members, the gate electrode is configured in a second comb-like structure for applying an electric potential of the gate to the plurality of electron-emitting members, and each of the first and second comb-like structures is provided with a plurality of comb-teeth, and a connecting electrode electrically connected to the plurality of teeth in at least one of the first and second comb-like structures.Type: GrantFiled: April 9, 2009Date of Patent: July 19, 2011Assignee: Canon Kabushiki KaishaInventor: Nobumasa Suzuki
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Publication number: 20090275209Abstract: Disclosed is a plasma processing apparatus and a plasma processing method, by which ions of plasma can be injected uniformly over the whole surface of a substrate to be processed, in a short time. Specifically, when the substrate is processed in a reaction container, the gas pressure inside the reaction container is increased. Alternatively, the distance between a plasma processing portion and the substrate is enlarged, or the substrate is temporally moved outwardly of the reaction container. As a further alternative, a shutter is disposed between the plasma producing zone and the substrate. With this procedure, incidence of ions of the plasma upon the substrate can be substantially intercepted for a predetermined time period from the start of plasma production.Type: ApplicationFiled: June 16, 2008Publication date: November 5, 2009Inventors: Shinzo Uchiyama, Nobumasa Suzuki, Hideo Kitagawa, Yusuke Fukuchi
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Publication number: 20090273270Abstract: An electron source including: a plurality of electron-emitting devices connected to a matrix wiring of scan lines and modulation lines on a substrate, wherein each of the electron-emitting devices includes a cathode electrode connected to the scan line, a gate electrode connected to the modulation line and a plurality of electron-emitting members, the cathode electrode is configured in a first comb-like structure for applying an electric potential of the cathode to the plurality of electron-emitting members, the gate electrode is configured in a second comb-like structure for applying an electric potential of the gate to the plurality of electron-emitting members, and each of the first and second comb-like structures is provided with a plurality of comb-teeth, and a connecting electrode electrically connected to the plurality of teeth in at least one of the first and second comb-like structures.Type: ApplicationFiled: April 9, 2009Publication date: November 5, 2009Applicant: CANON KABUSHIKI KAISHAInventor: Nobumasa Suzuki
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Publication number: 20090204153Abstract: A rod connector for connecting, to each other, opposed ends of a plurality of rods held by a rod holding tool which is fixed to a vertebra, wherein a cylindrically formed connector body is previously curved or bent according to a curve of the vertebral column constructed by the vertebra, both ends of the connector body are provided with a rod insertion hole, rod insertion openings into which the rods are inserted are formed in both end surfaces of the connector body, and the connector body includes screw holes through which fixing screws are threadedly inserted for fixing the rods inserted into the rod insertion hole.Type: ApplicationFiled: February 5, 2009Publication date: August 13, 2009Applicant: SHOWA IKA KOHGYO CO., LTD.Inventors: Nobumasa SUZUKI, Yutaka NOHARA, Kazuya ORIBE
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Patent number: 7572278Abstract: A rod connector is provided with a rod supporting portion in a part of a connector main body supported to a leading end of a shank portion. A rod pressing portion is provided in a side opposing to the rod supporting portion, and a rod is clamped and fixed by the rod pressing portion and the rod supporting portion. At this time, small convex portions provided in the rod supporting portion eat into the rod.Type: GrantFiled: September 11, 2003Date of Patent: August 11, 2009Assignee: Showa Ika Kohgyo Co., Ltd.Inventors: Nobumasa Suzuki, Yutaka Nohara, Shinnosuke Nakahara, Shigenobu Sato, Kazumasa Ueyama, Kazuhiro Hasegawa, Kazuya Oribe, Hiroshi Takamido
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Patent number: 7569070Abstract: A rod connector is provided with a rod supporting portion in a part of a connector main body supported to a leading end of a shank portion. A rod pressing portion is provided in a side opposing to the rod supporting portion, and a rod is clamped and fixed by the rod pressing portion and the rod supporting portion. At this time, small convex portions provided in the rod supporting portion eat into the rod.Type: GrantFiled: January 6, 2006Date of Patent: August 4, 2009Assignee: Showa Ika Kohgyo Co., Ltd.Inventors: Nobumasa Suzuki, Yutaka Nohara, Shinnosuke Nakahara, Shigenobu Sato, Kazumasa Ueyama, Kazuhiro Hasegawa, Kazuya Oribe, Hiroshi Takamido
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Publication number: 20090170341Abstract: A process for forming dielectric films containing at least metal atoms, silicon atoms, and oxygen atoms on a silicon substrate comprises a first step of oxidizing a surface portion of the silicon substrate to form a silicon dioxide film; a second step of forming a metal film on the silicon dioxide film in a non-oxidizing atmosphere; a third step of heating in a non-oxidizing atmosphere to diffuse the metal atoms constituting the metal film into the silicon dioxide film; and a fourth step of oxidizing the silicon dioxide film containing the diffused metal atoms to form the film containing the metal atoms, silicon atoms, and oxygen atoms.Type: ApplicationFiled: December 23, 2008Publication date: July 2, 2009Applicant: CANON KABUSHIKI KAISHAInventors: Naomu Kitano, Yusuke Fukuchi, Nobumasa Suzuki, Hideo Kitagawa
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Publication number: 20080173402Abstract: A radiofrequency wave electrode that is electrically insulated from a microwave introduction portion is provided, or the microwave introduction portion also functions as a radiofrequency wave electrode, and a radiofrequency wave is superimposed on a microwave for generating plasma. With this feature a plasma having an enhanced intensity is generated even in a portion where otherwise the microwave plasma intensity may be low and reaction product may easily adhere to.Type: ApplicationFiled: January 4, 2008Publication date: July 24, 2008Applicant: CANON KABUSHIKI KAISHAInventors: Nobumasa Suzuki, Yusuke Fukuchi, Yuu Nishimura
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Publication number: 20080149274Abstract: A plasma processing apparatus includes a vacuum vessel having a dielectric window; a first exhaust unit configured to evacuate the vacuum vessel; a microwave introducing portion for introducing a microwave into the vacuum vessel through the dielectric window; and a second exhaust unit configured to evacuate a closed space of the microwave introducing portion side of the dielectric window. Even when local stress is produced, the dielectric window is resistant to destruction. Even if the dielectric window is broken, the vacuum vessel is not significantly damaged.Type: ApplicationFiled: October 12, 2007Publication date: June 26, 2008Applicant: CANON KABUSHIKI KAISHAInventor: Nobumasa Suzuki
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Publication number: 20080053816Abstract: A plasma processing apparatus includes a plasma processing chamber and a source of microwaves. The microwaves are introduced to the processing chamber by a slotted annular waveguide having inner and outer arc-shaped slots. The distance between the centerline of the inner and outer arc-shaped slots is set to be an even multiple of a half wavelength of a microwave surface wave propagating along a surface of a dielectric window of the chamber. A distance between the centerline of the outer arc-shaped slot and an outer periphery of the dielectric window is set to be an odd multiple of the half wavelength of the microwave surface wave.Type: ApplicationFiled: August 22, 2007Publication date: March 6, 2008Applicant: CANON KABUSHIKI KAISHAInventors: Nobumasa Suzuki, Hideo Kitagawa
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Publication number: 20060129150Abstract: A rod connector is provided with a rod supporting portion in a part of a connector main body supported to a leading end of a shank portion. A rod pressing portion is provided in a side opposing to the rod supporting portion, and a rod is clamped and fixed by the rod pressing portion and the rod supporting portion. At this time, small convex portions provided in the rod supporting portion eat into the rod.Type: ApplicationFiled: January 6, 2006Publication date: June 15, 2006Applicant: Showa Ika Kohgyo Co., Ltd.Inventors: Nobumasa Suzuki, Yutaka Nohara, Shinnosuke Nakahara, Shigenobu Sato, Kazumasa Ueyama, Kazuhiro Hasegawa, Kazuya Oribe, Hiroshi Takamido
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Publication number: 20060081183Abstract: A processing apparatus that provides a plasma treatment to an object includes a process chamber that accommodates an object to be processed, and generates plasma, a gas introducing part for introducing gas into the process chamber, and a mechanism that arranges the object at an upper side in a flow of the gas than an plasma generating region.Type: ApplicationFiled: December 7, 2005Publication date: April 20, 2006Applicant: Canon Kabushiki KaishaInventor: Nobumasa Suzuki
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Publication number: 20060021700Abstract: Disclosed is a plasma processing apparatus and a plasma processing method, by which ions of plasma can be injected uniformly over the whole surface of a substrate to be processed, in a short time. Specifically, when the substrate is processed in a reaction container, the gas pressure inside the reaction container is increased. Alternatively, the distance between a plasma processing portion and the substrate is enlarged, or the substrate is temporally moved outwardly of the reaction container. As a further alternative, a shutter is disposed between the plasma producing zone and the substrate. With this procedure, incidence of ions of the plasma upon the substrate can be substantially intercepted for a predetermined time period from the start of plasma production.Type: ApplicationFiled: July 27, 2005Publication date: February 2, 2006Inventors: Shinzo Uchiyama, Nobumasa Suzuki, Hideo Kitagawa, Yusuke Fukuchi
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Publication number: 20050196973Abstract: Disclosed is a plasma nitriding method by which an ultra-thin oxide-nitride film having a half-value depth of not greater than 0.8 nm can be produced, overcoming various inconveniences involved in conventional plasma nitriding methods. In one preferred form of the present invention, the plasma nitriding method includes the steps of introducing a substrate to be processed, into a reaction chamber, evacuating the reaction chamber, supplying a gas containing nitrogen atoms, into the reaction chamber at a predetermined flow rate, adjusting an exhaust conductance to maintain a predetermined pressure inside the reaction chamber, and applying an electric voltage into the reaction chamber to produce plasma to thereby cause nitriding of the surface of the substrate, wherein the gas further contains hydrogen atoms, wherein the predetermined pressure is not less than 2 Torr, and wherein a spacing between the substrate and a densest portion of the plasma is not less than 75 nm.Type: ApplicationFiled: March 4, 2005Publication date: September 8, 2005Applicant: CANON KABUSHIKI KAISHAInventors: Nobumasa Suzuki, Hideo Kitagawa
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Patent number: 6916678Abstract: A method for modifying a surface of a substrate to be processed, by utilizing plasma includes the steps of adjusting a temperature of the substrate from 200° C. to 400° C., introducing gas including nitrogen atoms or mixture gas including inert gas and the gas including nitrogen atoms into a plasma process chamber, adjusting pressure in the plasma process chamber above 13.3 Pa, generating plasma in the plasma process chamber, and injecting ions equal to or smaller than 10 eV in the plasma into the substrate to be processed.Type: GrantFiled: November 6, 2003Date of Patent: July 12, 2005Assignee: Canon Kabushiki KaishaInventors: Hideo Kitagawa, Nobumasa Suzuki, Shinzo Uchiyama
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Publication number: 20050092243Abstract: A processing apparatus that provides a plasma treatment to an object includes a process chamber that accommodates an object to be processed, and generates plasma, a gas introducing part for introducing gas into the process chamber, and a mechanism that arranges the object at an upper side in a flow of the gas than an plasma generating region.Type: ApplicationFiled: January 30, 2004Publication date: May 5, 2005Applicant: CANON KABUSHIKI KAISHAInventor: Nobumasa Suzuki
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Patent number: 6884318Abstract: A plasma processing system in which air in a plasma processing chamber is exhausted by an exhaust unit and a microwave is supplied to the plasma processing chamber through an annular waveguide which is provided at predetermined intervals in a circumferential direction on the same plane facing a surface of an object to be processed on the plasma processing chamber side to generate plasma within the plasma processing chamber. The annular waveguide is separated into two layers of an input side waveguide and an output side waveguide. The slots are provided between these waveguides at predetermined intervals in a circumferential direction.Type: GrantFiled: September 30, 2002Date of Patent: April 26, 2005Assignee: Canon Kabushiki KaishaInventor: Nobumasa Suzuki
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Patent number: 6870123Abstract: In order to more accurately control the radiation characteristics of microwaves to improve the controllability of processing in radial and circumferential directions of an article, there are disclosed a microwave applicator and a plasma processing apparatus using the applicator, which comprise a circular waveguide having a surface provided with a plurality of slots for radiating microwaves, wherein the centers of the plurality of slots are offset in a direction parallel to the surface with respect to the center of the circular waveguide.Type: GrantFiled: March 26, 2001Date of Patent: March 22, 2005Assignee: Canon Kabushiki KaishaInventors: Nobumasa Suzuki, Shigenobu Yokoshima