Abstract: An image sensor controls the gain of a pixel signal on a pixel-by-pixel basis and extends a dynamic range while maintaining a S/N ratio at a favorable level. A column unit in an image sensor is independently detects a level of each pixel signal and independently sets a gain for level of the signal. A photoelectric converting region unit has pixels arranged two-dimensionally with a vertical signal line for each pixel column to output each pixel signal. The column unit is on an output side of the vertical signal line. The column unit for each pixel column has a pixel signal level detecting circuit, a programmable gain control, a sample and hold (S/H) circuit. Gain correction is performed according to a result of a detected level of the pixel signal.

Abstract: A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell (30) includes two pixels (31) and (32). Upper and lower photoelectric converters (33) and (34), transfer transistors (35) and (36) connected to the upper and lower photoelectric converters, respectively, a reset transistor (37), and an amplifying transistor (38) form the two pixels (31) and (32). A full-face signal line 39 is connected to the respective drains of the reset transistor (37) and the amplifying transistor (38). Controlling the full-face signal line (39), along with transfer signal lines (42) and (43) and a reset signal line (41), to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.

Abstract: P type semiconductor well regions 8 and 9 for device separation are provided in an upper and lower two layer structure in conformity with the position of a high sensitivity type photodiode PD, and the first P type semiconductor well region 8 at the upper layer is provided in the state of being closer to the pixel side than an end portion of a LOCOS layer 1A, for limiting a dark current generated at the end portion of the LOCOS layer 1A. In addition, the second P type semiconductor well region 9 at the lower layer is formed in a narrow region receding from the photodiode PD, so that the depletion layer of the photodiode PD is prevented from being obstructed, and the depletion is secured in a sufficiently broad region, whereby enhancement of the sensitivity of the photodiode PD can be achieved.

Abstract: Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

Abstract: An imaging device including an electronic shutter and a pixel array with color pixels with different characteristics of spectral sensitivity arranged. The pixel array part has at least one clear pixel, the plurality of color pixels including (i) a first color filter pixel having a peak of spectral sensitivity characteristics for red, (ii) a second color filter pixel having a peak for blue, and (iii) a third color filter pixel having a peak for green. The clear pixel has a high transmittance arranged in an oblique pixel array system at a given position of a given row and a given column with respect to the first color filter pixel, the second color filter pixel, and the third color filter pixel. An electronic shutter is separately driven for the at least one clear pixel and for the plurality of color filter pixels.

Abstract: Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

Abstract: A solid-state imaging device is disclosed. The device includes: a pixel array unit in which unit pixels including photoelectric conversion elements are two-dimensionally arranged and a first signal and a second signal are outputted to a signal line as a pixel signal; a signal processing unit including a variable gain amplifier, and an analog/digital converter; a signal supply unit supplying a reference signal; plural memory units holds the reference signal passed through the signal processing unit so as to correspond to the plural gains respectively when the variable gain amplifier is set at the plural gains respectively; and a correction unit subtracting the reference signal held in the plural memory units from the pixel signal outputted from each unit pixel in an active pixel area of the pixel array unit and passed through the signal processing unit when the variable gain amplifier is set at the plural gains respectively.

Abstract: An imaging device including: an electronic shutter and a pixel array part. The pixel array part has a plurality of pixels with different characteristics of spectral sensitivity arranged in an array and which converts light transmitted through the pixel into an electric signal. The pixel array part has a plurality of color pixels and at least one clear pixel, the plurality of color pixels including (i) a first color filter pixel having a peak of spectral sensitivity characteristics in red, (ii) a second color filter pixel having a peak in blue, and (iii) a third color filter pixel having a peak in green.

Abstract: An image sensor controls the gain of a pixel signal on a pixel-by-pixel basis and extends a dynamic range while maintaining a S/N ratio at a favorable level. A column unit in an image sensor is independently detects a level of each pixel signal and independently sets a gain for level of the signal. A photoelectric converting region unit has pixels arranged two-dimensionally with a vertical signal line for each pixel column to output each pixel signal. The column unit is on an output side of the vertical signal line. The column unit for each pixel column has a pixel signal level detecting circuit, a programmable gain control, a sample and hold (S/H) circuit. Gain correction is performed according to a result of a detected level of the pixel signal.

Abstract: A loudspeaker of high sound quality is achieved by improving rigidity of a material used for a diaphragm, a dust cap and a sub-cone. The diaphragm, the dust cap and the sub-cone of the loudspeaker are made of a paper beaten with the material containing bamboo fibers obtained from a bamboo tree aged one year or older, of which the fibers are finely beaten to an extent of micro-fibrillated form. The diaphragm and the dust cap are also made with a beaten paper containing at least 2 wt % of “A fibers” having stems of no greater than 30 ?m in diameter, and surfaces of the stems are fibrillated into shaggy branches having diameters of 1 ?m or less.

Abstract: A pre-amplifier (column region unit) of a solid-state imaging device including a pixel-signal controller. The pixel-signal controller, for each vertical signal line, detects the level of each pixel signal independently by a pixel-signal detector on the output side of a pixel-signal amplifier, and sets a gain independently to the pixel-signal amplifier according to the level of the signal. At a subsequent stage of the solid-state imaging device, an analog-to-digital (A/D) converter and a signal extending unit are provided. The A/D converter digitizes a pixel signal, and the digitized pixel signal is corrected by a gain set to the pixel-signal amplifier with reference to a classification signal from the pixel-signal detector, so that the dynamic range of signals of one screen is extended.

Abstract: Solid-state image pickup device and processing method, with A/D conversion on pixel signals read from a pixel array part that effectively achieves reductions in power consumption, size and price while retaining a high-quality image output. The device includes a pixel array part, a CDS (correlated double sampling) circuit, and an A/D converter. A pixel signal read via a signal line is subjected to noise elimination processing in the CDS circuit, and is then inputted into the A/D converter. The A/D converter includes a ?? modulator and a digital filter to perform highly accurate A/D conversion. The A/D converter can also be provided at the front stage of the CDS circuit.

Abstract: An image sensor controls the gain of a pixel signal on a pixel-by-pixel basis and extends a dynamic range while maintaining a S/N ratio at a favorable level. A column unit in an image sensor is independently detects a level of each pixel signal and independently sets a gain for level of the signal. A photoelectric converting region unit has pixels arranged two-dimensionally with a vertical signal line for each pixel column to output each pixel signal. The column unit is on an output side of the vertical signal line. The column unit for each pixel column has a pixel signal level detecting circuit, a programmable gain control, a sample and hold (S/H) circuit. Gain correction is performed according to a result of a detected level of the pixel signal.

Abstract: An object of the invention is to provide a resin composition which is particularly excellent in impact resistance, tensile elongation characteristics, heat resistance, surface properties, moldability and the like accompanied by less time dependent alteration of these properties and which is produced by mixing a certain plasticizer with a biodegradable polymer of plant origin, and to provide a molded product of the composition. The present invention can provide a resin composition comprising a biodegradable 3-hydroxyalkanoate copolymer (A) and a plasticizer (B), wherein: the biodegradable 3-hydroxyalkanoate copolymer (A) has a recurring unit represented by the structure formula (1): [—CHR—CH2—CO—O—] (wherein, R represents an alkyl group represented by CnH2n+1; and n is an integer of 1 to 15); the plasticizer (B) is based upon a polyglycerol acetic acid ester having an acetylation degree of no less than 50% ester.

Abstract: Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

Abstract: Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

Abstract: P type semiconductor well regions 8 and 9 for device separation are provided in an upper and lower two layer structure in conformity with the position of a high sensitivity type photodiode PD, and the first P type semiconductor well region 8 at the upper layer is provided in the state of being closer to the pixel side than an end portion of a LOCOS layer 1A, for limiting a dark current generated at the end portion of the LOCOS layer 1A. In addition, the second P type semiconductor well region 9 at the lower layer is formed in a narrow region receding from the photodiode PD, so that the depletion layer of the photodiode PD is prevented from being obstructed, and the depletion is secured in a sufficiently broad region, whereby enhancement of the sensitivity of the photodiode PD can be achieved.

Abstract: A resin composition which is capable of achieving superior flexibility and tear resistivity as well as forming/molding processibility, while increasing the biomass content of the resin composition for the purpose of preventing global warming and the like, and a formed sheet product are provided. The present invention relates to a resin composition containing a petroleum derived resin having a glass transition temperature (hereinafter, referred to as Tg) of not higher than 10° C., and a nonpetroleum derived resin having a Tg of not higher than 10° C. A sheet is produced by subjecting the resin composition to forming/molding processing.

Abstract: An imaging device including: a pixel array part in which a plurality of pixels with different characteristics of spectral sensitivity are arranged in an array and which converts light transmitted through the pixel into an electric signal. The pixel array part has a plurality of color pixels and at least one clear pixel, the plurality of color pixels including (i) a first color filter pixel having a peak of spectral sensitivity characteristics in red, (ii) a second color filter pixel having a peak in blue, and (iii) a third color filter pixel having a peak in green.

Abstract: Disclosed is a resin composition excellent in impact resistance, tensile properties and processability such as draw down property, which is produced by using a plant-derived biodegradable polymer produced by actively fixing carbon dioxide present in the earth. A resin composition comprising (A) a specific biodegradable (3-hydroxyalkanoate) copolymer, (B) a graft copolymer and (C) an acrylic processing modifier, the graft copolymer (B) and the acrylic processing modifier (C) being contained in the composition in amounts of 0.1 to 100 parts by weight and 0.1 to 30 parts by weight, respectively, based on 100 parts by weight of the biodegradable (3-hydroxyalkanoate) copolymer (A).