Patents by Inventor Nobuya Imazeki

Nobuya Imazeki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6214259
    Abstract: A dispersion containing Cu ultrafine particles individually dispersed therein comprises an organic solvent which is hardly evaporated at room temperature, but can be evaporated during a drying-firing step upon forming Cu-distributing wires on a semiconductor substrate and metal Cu-containing ultrafine particles having a particle size of not greater than 0.01 &mgr;m, in which the surface of the individual Cu ultrafine particles is surrounded by or covered with the organic solvent, these particles are independently dispersed in the solvent, and the dispersion has a viscosity of not higher than 50 cP at 20° C. The individual Cu ultrafine particle dispersion permits the complete embedding or filling of, for instance, fine wiring grooves, via holes and contact holes of LSI substrates with a Cu-thin film and thus permits the formation of a conductive, uniform and fine pattern on a substrate.
    Type: Grant
    Filed: August 9, 1999
    Date of Patent: April 10, 2001
    Assignees: Vacuum Metallurgical Co., Ltd., Nihon Shinku Gijutsu Kabushiki Kaisha
    Inventors: Masaaki Oda, Nobuya Imazeki, Hiroyuki Yamakawa, Hirohiko Murakami
  • Patent number: 6194316
    Abstract: A method for forming a Cu-thin film includes the steps of coating a dispersion containing Cu-containing ultrafine particles individually dispersed therein on a semiconductor substrate having recessed portions, such as wiring grooves, via holes or contact holes, which have an aspect ratio ranging from 1 to 30; firing the coated semiconductor substrate in an atmosphere which can decompose organic substances present in the dispersion, but never oxidizes Cu to form a Cu-thin film on the substrate; then removing the Cu-thin film on the substrate except for that present in the recessed portions to thus level the surface of the substrate and to form the Cu-thin film in the recessed portions. The method permits the complete embedding or filling of the recessed portions of LSI substrates having a high aspect ratio with a Cu-thin film and thus permits the formation of a conductive, uniform and fine pattern, and further requires a low processing cost.
    Type: Grant
    Filed: August 6, 1999
    Date of Patent: February 27, 2001
    Assignees: Vacuum Metallurgical Co., Ltd., Nihon Shinku Gijutsu Kabushiki Kaisha
    Inventors: Masaaki Oda, Nobuya Imazeki, Hiroyuki Yamakawa, Hirohiko Murakami
  • Patent number: 5953629
    Abstract: Ultra fine powder of metal dispersed in organic solvent is applied onto a surface of a semiconductor substrate, and heated to evaporate solvent and to sinter the ultra fine powder of metal. Deep contact holes or via holes, and grooves or trenches in the substrate can be filled up with metal, and the surface of the substrate can be covered with thin metal film.
    Type: Grant
    Filed: September 6, 1996
    Date of Patent: September 14, 1999
    Assignee: Vacuum Metallurgical Co., Ltd.
    Inventors: Nobuya Imazeki, Masaaki Oda, Izumi Nakayama