Patents by Inventor Nobuya Saito

Nobuya Saito has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11981686
    Abstract: An object of the present invention is to provide a compound that has a specific chemical structure having an activation effect on SIRT6 and is useful as an active component for preventing and treating inflammatory diseases, and the present invention relates to a compound represented by Formula (1) or a pharmaceutically acceptable salt thereof, where each symbol in Formula (1) has the same definition as that described in the specification.
    Type: Grant
    Filed: January 23, 2020
    Date of Patent: May 14, 2024
    Assignee: DAIICHI SANKYO COMPANY, LIMITED
    Inventors: Junya Kawai, Osamu Iwamoto, Yuma Umezaki, Katsuyoshi Nakajima, Hiroyuki Tsuruoka, Keiji Saito, Nobuya Kurikawa, Natsumi Nishihama, Shinji Tanaka, Momoko Ogitani, Tomohiro Honda, Wataru Saitoh, Tsuyoshi Soneda, Nobuyuki Ohkawa
  • Publication number: 20240150309
    Abstract: An object of the present invention is to provide a compound having an anti-inflammatory activity or a pharmacologically acceptable salt thereof. The solution of the present invention is a compound of general formula (1) or a pharmacologically acceptable salt thereof. wherein the symbols in the formula are defined below: R1: e.g., a C1-C6 alkyl group; R2: a C1-C6 alkyl group; A: e.g., an oxygen atom; and R3: e.g., a C1-C6 alkyl group.
    Type: Application
    Filed: November 3, 2023
    Publication date: May 9, 2024
    Applicant: Daiichi Sankyo Company, Limited
    Inventors: Keiji Saito, Katsuyoshi Nakajima, Toru Taniguchi, Osamu Iwamoto, Satoshi Shibuya, Yasuyuki Ogawa, Kazumasa Aoki, Nobuya Kurikawa, Shinji Tanaka, Momoko Ogitani, Eriko Kioi, Kaori Ito, Natsumi Nishihama, Tsuyoshi Mikkaichi, Wataru Saitoh
  • Patent number: 7141471
    Abstract: A sidewall insulating film (11) made of a silicon oxide film is formed on the sidewall of a gate electrode (7) (word line) with an aim to reduce the capacitance to the word line serving as the major component of the bit line capacitance. Also, when openings for connecting the bit lines are formed above the spaces of the gate electrodes (7) (word lines) by the dry etching of a silicon oxide film (31) above contact holes (12), a silicon nitride film (19) to be an etching stopper is provided below the silicon oxide film (31) so as to reduce the amount of the bottom surface of the opening receded below the upper surface of a cap insulating film (9).
    Type: Grant
    Filed: February 7, 2002
    Date of Patent: November 28, 2006
    Assignee: Elpida Memory, Inc.
    Inventors: Satoru Yamada, Hiroyuki Enomoto, Nobuya Saito, Tsuyoshi Kawagoe, Hisaomi Yamashita
  • Publication number: 20040076068
    Abstract: A sidewall insulating film (11) made of a silicon oxide film is formed on the sidewall of a gate electrode (7) (word line) with an aim to reduce the capacitance to the word line serving as the major component of the bit line capacitance. Also, when openings for connecting the bit lines are formed above the spaces of the gate electrodes (7) (word lines) by the dry etching of a silicon oxide film (31) above contact holes (12), a silicon nitride film (19) to be an etching stopper is provided below the silicon oxide film (31) so as to reduce the amount of the bottom surface of the opening receded below the upper surface of a cap insulating film (9). A side-wall insulating film (11) composed of a silicon oxide film is formed on the side wall of a gate electrode (7) (word line WL) to reduce pair word line capacity components as a main component of a bit line capacity.
    Type: Application
    Filed: September 5, 2003
    Publication date: April 22, 2004
    Inventors: Satoru Yamada, Hiroyuki Enomoto, Nobuya Saito, Tsuyoshi Kawagoe, Hisaomi Yamashita