Abstract: Thermoelectric conversion cells of a thermoelectric conversion element include a thermoelectric conversion layer formed on a main surface of a substrate, an insulating layer covering the thermoelectric conversion layer, a first electrode including a first layer and a second layer, and a second electrode. The first layer connects to the main surface of the thermoelectric conversion layer via a first contact hole, and the second layer covers the first layer. The second electrode connects to the main surface of the thermoelectric conversion layer via a second contact hole. The second layer and the second electrode, and the first layer are formed from materials having different work functions. In thermoelectric conversion cells that are adjacent to each other, the second layer of one of the thermoelectric conversion cells and the second electrode of the other of the thermoelectric conversion cells are formed integrally, and the thermoelectric conversion cells are connected in series.

Abstract: Thermoelectric conversion cells of a thermoelectric conversion element include a thermoelectric conversion layer formed on a main surface of a substrate, an insulating layer covering the thermoelectric conversion layer, a first electrode including a first layer and a second layer, and a second electrode. The first layer connects to the main surface of the thermoelectric conversion layer via a first contact hole, and the second layer covers the first layer. The second electrode connects to the main surface of the thermoelectric conversion layer via a second contact hole. The second layer and the second electrode, and the first layer are formed from materials having different work functions. In thermoelectric conversion cells that are adjacent to each other, the second layer of one of the thermoelectric conversion cells and the second electrode of the other of the thermoelectric conversion cells are formed integrally, and the thermoelectric conversion cells are connected in series.

Abstract: An optical device package includes a glass substrate, a warpage reducing film, a redistribution layer, and a semiconductor element. The warpage reducing film is disposed directly or indirectly on the glass substrate. The redistribution layer includes a wiring sublayer and an insulating sublayer. The wiring sublayer and the insulating sublayer are at least partially disposed on the warpage reducing film. The semiconductor element is mounted on the redistribution layer.

Abstract: A sensor system includes a sensing element, an illumination optical system including a light source, the illumination optical system being configured to obliquely illuminate the sensing element, and a detector device configured to detect light reflected off the sensing element. The sensing element includes a chemical sensing layer configured to change in an optical characteristic in response to contact with a target substance, a reflection layer configured to reflect at least part of incident light, and an intermediate layer located between the reflection layer and the chemical sensing layer. The detector device is configured to separately detect p-polarized light and s-polarized light reflected off the sensing element.

Abstract: A thermoelectric conversion element includes a substrate, a thermoelectric conversion layer disposed on a first main surface of the substrate, an insulating layer covering the thermoelectric conversion layer, a first electrode disposed on the insulating layer and connecting to a first main surface of the thermoelectric conversion layer via a first contact hole of insulating layer, and a second electrode disposed on the insulating layer and connecting to the first main surface of the thermoelectric conversion layer via a second contact hole of the insulating layer. At least a portion of the first electrode is formed from a material that has a work function that is different from a work function of a material forming the second electrode.

Abstract: A thermoelectric conversion element includes a substrate, a thermoelectric conversion layer disposed on a first main surface of the substrate, an insulating layer covering the thermoelectric conversion layer, a first electrode disposed on the insulating layer and connecting to a first main surface of the thermoelectric conversion layer via a first contact hole of insulating layer, and a second electrode disposed on the insulating layer and connecting to the first main surface of the thermoelectric conversion layer via a second contact hole of the insulating layer. At least a portion of the first electrode is formed from a material that has a work function that is different from a work function of a material forming the second electrode.

Abstract: A display device includes a display panel including a plurality of pixels arrayed on a substrate, a photosensor, and a control device including a lock-in amplifier. Each of the plurality of pixels includes a light-emitting element. The control device is configured to select one or more pixels from the plurality of pixels, perform measurement of a light intensity of the one or more pixels, and control light emission of the one or more pixels based on a result of the measurement. The measurement includes applying alternating modulation to light emission of the selected one or more pixels, and measuring a light detection signal generated by the photodetector in response to light from the selected one or more pixels with the lock-in amplifier based on a reference signal synchronized with the alternating modulation.

Abstract: Thermoelectric conversion cells of a thermoelectric conversion element include a thermoelectric conversion layer formed on a main surface of a substrate, an insulating layer covering the thermoelectric conversion layer, a first electrode including a first layer and a second layer, and a second electrode. The first layer connects to the main surface of the thermoelectric conversion layer via a first contact hole, and the second layer covers the first layer. The second electrode connects to the main surface of the thermoelectric conversion layer via a second contact hole. The second layer and the second electrode, and the first layer are formed from materials having different work functions. In thermoelectric conversion cells that are adjacent to each other, the second layer of one of the thermoelectric conversion cells and the second electrode of the other of the thermoelectric conversion cells are formed integrally, and the thermoelectric conversion cells are connected in series.

Abstract: A gas sensing element that reflects light incoming along an optical path on a sensing face, where the light reflected by the gas sensing element changes depending on a quantity of a specific gas that is in contact with the gas sensing element, and where each of a first optical fiber and a second optical fiber bends the optical path. The gas sensing element, a light source, a photodetector, and a magnetic field applicator are disposed on a same side with respect to a virtual plane that is perpendicular to an incident plane of the incoming light to the sensing face of the gas sensing element and includes a point on the optical path where light goes out from the first optical fiber and a point on the optical path where light enters the second optical fiber.

Abstract: An optical detection type chemical sensor includes a light source, a detection element and a photodetector. The detection element is constituted of a laminate in which a multilayer film including a chemical detection layer, an optical interference layer, and a half mirror layer is formed on a transparent substrate. At least one of the layers includes a magnetic material. Light from the light source is applied to the detection element under the condition that the light enters inside of the detection element from the rear surface of the transparent substrate on which the laminate is not formed and multiple reflection occurring in the laminate intensifies the magneto-optical effect. A subject is detected by using the photodetector to detect a magneto-optical signal indicating a change in reflected light from the laminate resulting from a change in an optical property resulting from a reaction in the chemical detection layer.

Abstract: A gas sensing element that reflects light incoming along an optical path on a sensing face, where the light reflected by the gas sensing element changes depending on a quantity of a specific gas that is in contact with the gas sensing element, and where each of a first optical fiber and a second optical fiber bends the optical path. The gas sensing element, a light source, a photodetector, and a magnetic field applicator are disposed on a same side with respect to a virtual plane that is perpendicular to an incident plane of the incoming light to the sensing face of the gas sensing element and includes a point on the optical path where light goes out from the first optical fiber and a point on the optical path where light enters the second optical fiber.

Abstract: A gas sensing element reflects light incoming along an optical path on a sensing face. The light reflected by the gas sensing element changes in a characteristic depending on quantity of a specific gas that is in contact with the gas sensing element. Each of a first optical element and a second optical element bends the optical path. The gas sensing element, a light source, a photodetector, and a magnetic field applicator are disposed on the same side with respect to a virtual plane that is perpendicular to an incident plane of the incoming light to the sensing face of the gas sensing element and includes a point on the optical path where light goes out from the first optical element and a point on the optical path where light enters the second optical element.

Abstract: A thermoelectric transducer includes a substrate, a thermoelectric film on the substrate, a first electrode on the substrate, and a second electrode on the substrate, the second electrode being different from the first electrode in work function. The first electrode and the second electrode are in contact with the same side of the thermoelectric film. The outer edge of the thermoelectric film is located inner than the outer edge of the substrate.

Abstract: An optical detection type chemical sensor includes a light source, a detection element and a photodetector. The detection element is constituted of a laminate in which a multilayer film including a chemical detection layer, an optical interference layer, and a half mirror layer is formed on a transparent substrate. At least one of the layers includes a magnetic material. Light from the light source is applied to the detection element under the condition that the light enters inside of the detection element from the rear surface of the transparent substrate on which the laminate is not formed and multiple reflection occurring in the laminate intensifies the magneto-optical effect. A subject is detected by using the photodetector to detect a magneto-optical signal indicating a change in reflected light from the laminate resulting from a change in an optical property resulting from a reaction in the chemical detection layer.

Abstract: A display device includes a substrate; a plurality of light-emitting elements on the substrate; and a plurality of pixel circuits on the substrate, being configured to control the plurality of light-emitting elements in one-to-one correspondence. Each of the plurality of pixel circuits includes a thin film transistor. The thin film transistor includes a channel. The plurality of pixel circuits are disposed at different positions in a scanning direction of a pulse laser beam for annealing the channels. At least channels for light-emitting elements of the same color out of the channels are disposed at the same phase of irradiation cycles of the pulse laser beam in the scanning direction.

Abstract: A thermoelectric transducer includes a substrate, a thermoelectric film on the substrate, a first electrode on the substrate, and a second electrode on the substrate, the second electrode being different from the first electrode in work function. The first electrode and the second electrode are in contact with the same side of the thermoelectric film. The outer edge of the thermoelectric film is located inner than the outer edge of the substrate.

Abstract: A magneto-optical measurement apparatus includes a light source, a thin-film sensor including a magnetic film and reflecting light from the light source, a magnetic field generation device applying a magnetic field to the thin-film sensor, and a controller. The magnetic field generation device is configured to alternately supply a positive magnetic field and a negative magnetic field to the thin-film sensor. The controller is configured to measure the amount of light reflected by the thin-film sensor under the positive magnetic field, measure the amount of light reflected by the thin-film sensor under the negative magnetic field, determine one or more regression formulae from the values measured under the positive magnetic field and the values measured under the negative magnetic field, and determine a predetermined output value based on the one or more regression formulae.

Abstract: A gas sensing element reflects light incoming along an optical path on a sensing face. The light reflected by the gas sensing element changes in a characteristic depending on quantity of a specific gas that is in contact with the gas sensing element. Each of a first optical element and a second optical element bends the optical path. The gas sensing element, a light source, a photodetector, and a magnetic field applicator are disposed on the same side with respect to a virtual plane that is perpendicular to an incident plane of the incoming light to the sensing face of the gas sensing element and includes a point on the optical path where light goes out from the first optical element and a point on the optical path where light enters the second optical element.

Abstract: A display device includes a substrate; a plurality of light-emitting elements on the substrate; and a plurality of pixel circuits on the substrate, being configured to control the plurality of light-emitting elements in one-to-one correspondence. Each of the plurality of pixel circuits includes a thin film transistor. The thin film transistor includes a channel. The plurality of pixel circuits are disposed at different positions in a scanning direction of a pulse laser beam for annealing the channels. At least channels for light-emitting elements of the same color out of the channels are disposed at the same phase of irradiation cycles of the pulse laser beam in the scanning direction.

Abstract: For improved high-definition of liquid crystal display devices and the use thereof in bright places, luminance of backlights is being increased. Thus, when a light-shielding layer is employed for suppressing a light leakage current, characteristic fluctuations of transistors are caused, which may result in showing faulty display. In a dual-gate thin film transistor having a floating light-shielding layer, the layout is designed in such a manner that the film thickness of the insulating layer is equal to or more than 200 nm and equal to or less than 500 nm and that Sg/Sd becomes 4.7 or more, provided that an opposing area between the light-shielding layer and a drain region in a place at the outermost side of the active layer is Sd and the opposing area between the light-shielding layer and the gate electrode is Sg.