Patents by Inventor Nobuyuki Kaji
Nobuyuki Kaji has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210292927Abstract: A method for refining bismuth is provided, which comprises recovering bismuth from a solution obtained after recovery of noble metals from a copper electrolytic slime. The method comprises: 1) a neutralization step of adding alkali to an acid solution to adjust the pH to the range of 2.0 or more and 3.Type: ApplicationFiled: January 30, 2017Publication date: September 23, 2021Applicant: SUMITOMO METAL MINING CO., LTD.Inventors: Hiroshi TAKENOUCHI, Nobuyuki KAJI, Toshihiko NAGAKURA, Kenji TAKEDA, Satoshi ASANO
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Patent number: 10714627Abstract: Provided is a bottom gate type thin film transistor including on a substrate (1) a gate electrode (2), a first insulating film (3) as a gate insulating film, an oxide semiconductor layer (4) as a channel layer, a second insulating film (5) as a protective layer, a source electrode (6), and a drain electrode (7), in which the oxide semiconductor layer (4) includes an oxide including at least one selected from the group consisting of In, Zn, and Sn, and the second insulating film (5) includes an amorphous oxide insulator formed so as to be in contact with the oxide semiconductor layer (4) and contains therein 3.8×1019 molecules/cm3 or more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry.Type: GrantFiled: January 17, 2018Date of Patent: July 14, 2020Assignee: CANON KABUSHIKI KAISHAInventors: Ryo Hayashi, Nobuyuki Kaji, Hisato Yabuta
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Publication number: 20180145181Abstract: Provided is a bottom gate type thin film transistor including on a substrate (1) a gate electrode (2), a first insulating film (3) as a gate insulating film, an oxide semiconductor layer (4) as a channel layer, a second insulating film (5) as a protective layer, a source electrode (6), and a drain electrode (7), in which the oxide semiconductor layer (4) includes an oxide including at least one selected from the group consisting of In, Zn, and Sn, and the second insulating film (5) includes an amorphous oxide insulator formed so as to be in contact with the oxide semiconductor layer (4) and contains therein 3.8×1019 molecules/cm3 or more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry.Type: ApplicationFiled: January 17, 2018Publication date: May 24, 2018Inventors: Ryo Hayashi, Nobuyuki Kaji, Hisato Yabuta
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Patent number: 9905699Abstract: Provided is a bottom gate type thin film transistor including on a substrate (1) a gate electrode (2), a first insulating film (3) as a gate insulating film, an oxide semiconductor layer (4) as a channel layer, a second insulating film (5) as a protective layer, a source electrode (6), and a drain electrode (7), in which the oxide semiconductor layer (4) includes an oxide including at least one selected from the group consisting of In, Zn, and Sn, and the second insulating film (5) includes an amorphous oxide insulator formed so as to be in contact with the oxide semiconductor layer (4) and contains therein 3.8×1019 molecules/cm3 or more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry.Type: GrantFiled: November 26, 2014Date of Patent: February 27, 2018Assignee: CANON KABUSHIKI KAISHAInventors: Ryo Hayashi, Nobuyuki Kaji, Hisato Yabuta
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Patent number: 9153703Abstract: There is provided a thin-film transistor including at least a substrate, a gate electrode, a gate insulating layer, an oxide semiconductor layer, a source electrode, a drain electrode and a protective layer, wherein the oxide semiconductor layer is an amorphous oxide containing at least one of the elements In, Ga and Zn, the gate electrode-side carrier density of the oxide semiconductor layer is higher than the protective layer-side carrier density thereof, and the film thickness of the oxide semiconductor layer is 30 nm±15 nm.Type: GrantFiled: February 8, 2008Date of Patent: October 6, 2015Assignee: Canon Kabushiki KaishaInventors: Nobuyuki Kaji, Ryo Hayashi, Hisato Yabuta, Katsumi Abe
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Publication number: 20150084048Abstract: Provided is a bottom gate type thin film transistor including on a substrate (1) a gate electrode (2), a first insulating film (3) as a gate insulating film, an oxide semiconductor layer (4) as a channel layer, a second insulating film (5) as a protective layer, a source electrode (6), and a drain electrode (7), in which the oxide semiconductor layer (4) includes an oxide including at least one selected from the group consisting of In, Zn, and Sn, and the second insulating film (5) includes an amorphous oxide insulator formed so as to be in contact with the oxide semiconductor layer (4) and contains therein 3.8×1019 molecules/cm3 or more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry.Type: ApplicationFiled: November 26, 2014Publication date: March 26, 2015Applicant: CANON KABUSHIKI KAISHAInventors: Ryo Hayashi, Nobuyuki Kaji, Hisato Yabuta
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Patent number: 8502222Abstract: An amorphous oxide semiconductor contains at least one element selected from In, Ga, and Zn at an atomic ratio of InxGayZnz, wherein the density M of the amorphous oxide semiconductor is represented by the relational expression (1) below: M?0.94×(7.121x+5.941y+5.675z)/(x+y+z)??(1) where 0?x?1, 0?y?1, 0?z?1, and x+y+z?0.Type: GrantFiled: February 23, 2012Date of Patent: August 6, 2013Assignee: Canon Kabushiki KaishaInventors: Hisato Yabuta, Ayanori Endo, Nobuyuki Kaji, Ryo Hayashi
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Patent number: 8487266Abstract: An X-ray detector includes an X-ray photoelectric conversion layer configured to produce electric charges in proportion to X-ray irradiation incident on the layer, a collecting electrode configured to collect the electric charges produced by the X-ray photoelectric conversion layer, a common electrode disposed on a surface of the X-ray photoelectric conversion layer opposite to the collecting electrode, a storage capacitor configured to store the electric charges collected by the collecting electrode, and a readout unit configured to read out the electric charges stored in the storage capacitor. A voltage is to be applied between the collecting electrode and the common electrode. The X-ray photoelectric conversion layer is formed of a polycrystalline oxide.Type: GrantFiled: January 4, 2011Date of Patent: July 16, 2013Assignee: Canon Kabushiki KaishaInventors: Hisato Yabuta, Nobuyuki Kaji, Ryo Hayashi, Masatoshi Watanabe, Taihei Mukaide, Kazunori Fukuda
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Patent number: 8415198Abstract: A production method of a thin film transistor including an active layer including an amorphous oxide semiconductor film, wherein a step of forming the active layer includes a first step of forming the oxide film in an atmosphere having an introduced oxygen partial pressure of 1×10?3 Pa or less, and a second step of annealing the oxide film in an oxidative atmosphere after the first step.Type: GrantFiled: July 26, 2007Date of Patent: April 9, 2013Assignee: Canon Kabushiki KaishaInventors: Naho Itagaki, Toru Den, Nobuyuki Kaji, Ryo Hayashi, Masafumi Sano
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Patent number: 8389996Abstract: A method for forming a SnO-containing semiconductor film includes a first step of forming a SnO-containing film; a second step of forming an insulator film composed of an oxide or a nitride on the SnO-containing film to provide a laminated film including the SnO-containing film and the insulator film; and a third step of subjecting the laminated film to a heat treatment.Type: GrantFiled: March 1, 2010Date of Patent: March 5, 2013Assignee: Canon Kabushiki KaishaInventors: Hisato Yabuta, Nobuyuki Kaji, Ryo Hayashi
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Method for manufacturing semiconductor device or apparatus, and apparatus for manufacturing the same
Patent number: 8216879Abstract: A method for manufacturing a semiconductor device or apparatus having at least a semiconductor as a component, characterized by including irradiating the semiconductor with light having a longer wavelength than the absorption edge wavelength of the semiconductor to change the threshold voltage of the semiconductor device or apparatus, and checking the threshold voltage of the semiconductor device or apparatus, after or during irradiation with the light, to determine whether the threshold voltage is in a predetermined range, during manufacturing the semiconductor device or apparatus.Type: GrantFiled: May 7, 2009Date of Patent: July 10, 2012Assignee: Canon Kabushiki KaishaInventors: Nobuyuki Kaji, Masato Ofuji, Yasuyoshi Takai, Takehiko Kawasaki, Norio Kaneko, Ryo Hayashi -
Publication number: 20120168750Abstract: Provided is a bottom gate type thin film transistor including on a substrate (1) a gate electrode (2), a first insulating film (3) as a gate insulating film, an oxide semiconductor layer (4) as a channel layer, a second insulating film (5) as a protective layer, a source electrode (6), and a drain electrode (7), in which the oxide semiconductor layer (4) includes an oxide including at least one selected from the group consisting of In, Zn, and Sn, and the second insulating film (5) includes an amorphous oxide insulator formed so as to be in contact with the oxide semiconductor layer (4) and contains therein 3.8×1019 molecules/cm3 or more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry.Type: ApplicationFiled: March 13, 2012Publication date: July 5, 2012Applicant: CANON KABUSHIKI KAISHAInventors: Ryo Hayashi, Nobuyuki Kaji, Hisato Yabuta
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Publication number: 20120146021Abstract: An amorphous oxide semiconductor contains at least one element selected from In, Ga, and Zn at an atomic ratio of InxGayZnz, wherein the density M of the amorphous oxide semiconductor is represented by the relational expression (1) below: M?0.94×(7.121x+5.941y+5.675z)/(x+y+z) ??(1) where 0?x?1, 0?y?1, 0?z?1, and x+y+z?0.Type: ApplicationFiled: February 23, 2012Publication date: June 14, 2012Applicant: CANON KABUSHIKI KAISHAInventors: Hisato Yabuta, Ayanori Endo, Nobuyuki Kaji, Ryo Hayashi
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Patent number: 8154017Abstract: An amorphous oxide semiconductor contains at least one element selected from In, Ga, and Zn at an atomic ratio of InxGayZnz, wherein the density M of the amorphous oxide semiconductor is represented by the relational expression (1) below: M?0.94×(7.121x+5.941y+5.675z)/(x+y+z)??(1) where 0?x?1, 0?y?1, 0?z?1, and x+y+z?0.Type: GrantFiled: April 15, 2008Date of Patent: April 10, 2012Assignee: Canon Kabushiki KaishaInventors: Hisato Yabuta, Ayanori Endo, Nobuyuki Kaji, Ryo Hayashi
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Patent number: 8148721Abstract: Provided is a bottom gate type thin film transistor including on a substrate (1) a gate electrode (2), a first insulating film (3) as a gate insulating film, an oxide semiconductor layer (4) as a channel layer, a second insulating film (5) as a protective layer, a source electrode (6), and a drain electrode (7), in which the oxide semiconductor layer (4) includes an oxide including at least one selected from the group consisting of In, Zn, and Sn, and the second insulating film (5) includes an amorphous oxide insulator formed so as to be in contact with the oxide semiconductor layer (4) and contains therein 3.8×1019 molecules/cm3 or more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry.Type: GrantFiled: November 20, 2007Date of Patent: April 3, 2012Assignee: Canon Kabushiki KaishaInventors: Ryo Hayashi, Nobuyuki Kaji, Hisato Yabuta
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Patent number: 8143115Abstract: A thin film transistor is manufactured by forming a gate electrode on a substrate, forming a first insulating film on the gate electrode, forming an oxide semiconductor layer on the first insulating film with an amorphous oxide, patterning the first insulating film, patterning the oxide semiconductor layer, forming a second insulating film on the oxide semiconductor layer in an oxidative-gas-containing atmosphere, patterning the second insulating film to expose a pair of contact regions, forming an electrode layer on the pair of contact regions, and patterning the electrode layer to for a source electrode and a drain electrode.Type: GrantFiled: November 29, 2007Date of Patent: March 27, 2012Assignee: Canon Kabushiki KaishaInventors: Hideyuki Omura, Ryo Hayashi, Nobuyuki Kaji, Hisato Yabuta
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Patent number: 8110436Abstract: A method for manufacturing a field-effect transistor is provided. The field-effect transistor includes on a substrate a source electrode, a drain electrode, an oxide semiconductor layer, an insulating layer and a gate electrode. The method includes, after forming the insulating layer on the oxide semiconductor layer, an annealing step of increasing the electrical conductivity of the oxide semiconductor layers by annealing in an atmosphere containing moisture. The steam pressure at the annealing step is higher than the saturated vapor pressure in the atmosphere at the annealing temperature.Type: GrantFiled: September 25, 2008Date of Patent: February 7, 2012Assignee: Canon Kabushiki KaishaInventors: Ryo Hayashi, Hisato Yabuta, Yoshinori Tateishi, Nobuyuki Kaji
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Publication number: 20110309356Abstract: A method for forming a SnO-containing semiconductor film includes a first step of forming a SnO-containing film; a second step of forming an insulator film composed of an oxide or a nitride on the SnO-containing film to provide a laminated film including the SnO-containing film and the insulator film; and a third step of subjecting the laminated film to a heat treatment.Type: ApplicationFiled: March 1, 2010Publication date: December 22, 2011Applicant: CANON KABUSHIKI KAISHAInventors: Hisato Yabuta, Nobuyuki Kaji, Ryo Hayashi
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Patent number: 8044402Abstract: An amorphous insulator film is provided which is composed of silicon (Si) oxide, in which the amorphous insulator film includes Ar and an amount of Ar included therein is equal to or larger than 3 at. % in terms of atomic ratio with respect to Si.Type: GrantFiled: February 2, 2008Date of Patent: October 25, 2011Assignee: Canon Kabushiki KaishaInventors: Hisato Yabuta, Nobuyuki Kaji, Ryo Hayashi
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Publication number: 20110168905Abstract: An X-ray detector includes an X-ray photoelectric conversion layer configured to produce electric charges in proportion to X-ray irradiation incident on the layer, a collecting electrode configured to collect the electric charges produced by the X-ray photoelectric conversion layer, a common electrode disposed on a surface of the X-ray photoelectric conversion layer opposite to the collecting electrode, a storage capacitor configured to store the electric charges collected by the collecting electrode, and a readout unit configured to read out the electric charges stored in the storage capacitor. A voltage is to be applied between the collecting electrode and the common electrode. The X-ray photoelectric conversion layer is formed of a polycrystalline oxide.Type: ApplicationFiled: January 4, 2011Publication date: July 14, 2011Applicant: CANON KABUSHIKI KAISHAInventors: Hisato Yabuta, Nobuyuki Kaji, Ryo Hayashi, Masatoshi Watanabe, Taihei Mukaide, Kazunori Fukuda