Patents by Inventor Nobuyuki Ohtuka

Nobuyuki Ohtuka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Atomic layer epitaxy of compound semiconductor
    Patent number: 5270247
    Abstract: A heterojunction between In-containing compound semiconductors in which the interface thereof is controlled at an atom level is provided by a process of atomic layer epitaxy (ALE) in which hydrogen gas is utilized as a carrier gas and as a purge gas for a separation of source gases. The time for which the purge gas is supplied can be utilized for controlling the ALE.
    Type: Grant
    Filed: July 8, 1992
    Date of Patent: December 14, 1993
    Assignee: Fujitsu Limited
    Inventors: Yoshiki Sakuma, Masashi Ozeki, Nobuyuki Ohtuka, Kunihiko Kodama