Patents by Inventor Nobuyuki Okayama
Nobuyuki Okayama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10896842Abstract: A manufacturing method of sample table is provided. The sample table holds a semiconductor wafer on which a plasma process is to be performed, and the manufacturing method includes: preparing an adsorption plate that has a contact surface on which a lapping process has been performed and surface-contacting the semiconductor wafer, and that adsorbs the semiconductor wafer; and preparing a supporting substrate which has a recess surface to which a noncontact surface of the adsorption plate is adhered, wherein a difference between a depth of an approximate center portion of the recess surface and a depth of a distant portion spaced apart from the approximate center portion is larger than a difference between a thickness of the adsorption plate at a portion contacting the approximate center portion and a thickness of the adsorption plate at a portion contacting the distant portion.Type: GrantFiled: April 30, 2018Date of Patent: January 19, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Wataru Yoshikawa, Kazuki Moyama, Nobuyuki Okayama, Kenji Sudou, Yasuhiro Otsuka
-
Publication number: 20180286740Abstract: A manufacturing method of sample table is provided. The sample table holds a semiconductor wafer on which a plasma process is to be performed, and the manufacturing method includes: preparing an adsorption plate that has a contact surface on which a lapping process has been performed and surface-contacting the semiconductor wafer, and that adsorbs the semiconductor wafer; and preparing a supporting substrate which has a recess surface to which a noncontact surface of the adsorption plate is adhered, wherein a difference between a depth of an approximate center portion of the recess surface and a depth of a distant portion spaced apart from the approximate center portion is larger than a difference between a thickness of the adsorption plate at a portion contacting the approximate center portion and a thickness of the adsorption plate at a portion contacting the distant portion.Type: ApplicationFiled: April 30, 2018Publication date: October 4, 2018Inventors: Wataru YOSHIKAWA, Kazuki MOYAMA, Nobuyuki OKAYAMA, Kenji SUDOU, Yasuhiro OTSUKA
-
Patent number: 9466468Abstract: A shower head includes a gas injection plate and a gas supply unit. The gas supply unit has a first gas supply path provided in a region along the axis and a second gas supply path provided in a region surrounding the region where the first gas supply path is provided. The first gas supply path has a first gas diffusion space connected to a first gas line of the gas supply unit, second gas lines, a second gas diffusion space, third gas lines and a third gas diffusion space which are connected in that order. The second gas supply path has a fourth gas diffusion space connected to a fourth gas line of the gas supply unit, fifth gas lines, a fifth gas diffusion space, sixth gas lines, and a sixth gas diffusion space which are connected in that order.Type: GrantFiled: March 25, 2014Date of Patent: October 11, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Nobuyuki Okayama, Koichi Kazama, Shuichiro Uda, Satoshi Yamada, Shinji Fuchigami
-
Patent number: 9263298Abstract: A plasma etching apparatus 11 includes a mounting table that holds a semiconductor substrate W thereon; a first heater 18a that heats a central region of the semiconductor substrate W held on the mounting table 14; a second heater 18b that heats an edge region around the central region of the semiconductor substrate W held on the mounting table 14; a reactant gas supply unit 13 that supplies a reactant gas for a plasma process toward the central region of the semiconductor substrate W held on the mounting table 14; and a control unit 20 that performs a plasma etching process on the semiconductor substrate W while controlling the first heater 18a and the second heater 18b to heat the central region and the edge region of the processing target substrate W held on the mounting table 14 to different temperatures.Type: GrantFiled: February 26, 2009Date of Patent: February 16, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Naoki Matsumoto, Kazuto Takai, Reika Ko, Nobuyuki Okayama
-
Publication number: 20140291286Abstract: A shower head includes a gas injection plate and a gas supply unit. The gas supply unit has a first gas supply path provided in a region along the axis and a second gas supply path provided in a region surrounding the region where the first gas supply path is provided. The first gas supply path has a first gas diffusion space connected to a first gas line of the gas supply unit, second gas lines, a second gas diffusion space, third gas lines and a third gas diffusion space which are connected in that order. The second gas supply path has a fourth gas diffusion space connected to a fourth gas line of the gas supply unit, fifth gas lines, a fifth gas diffusion space, sixth gas lines, and a sixth gas diffusion space which are connected in that order.Type: ApplicationFiled: March 25, 2014Publication date: October 2, 2014Applicant: TOKYO ELECTRON LIMITEDInventors: Nobuyuki OKAYAMA, Koichi KAZAMA, Shuichiro UDA, Satoshi YAMADA, Shinji FUCHIGAMI
-
Publication number: 20120211165Abstract: A sample table which stably holds a semiconductor wafer by maintaining smoothness of a contact surface via a lapping process and forming the contact surface to have an approximate recess shape, and a microwave plasma processing apparatus including the sample table.Type: ApplicationFiled: September 29, 2010Publication date: August 23, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Wataru Yoshikawa, Kazuki Moyama, Nobuyuki Okayama, Kenji Sudou, Yasuhiro Otsuka
-
Publication number: 20120012556Abstract: A plasma etching apparatus 11 includes a mounting table that holds a semiconductor substrate W thereon; a first heater 18a that heats a central region of the semiconductor substrate W held on the mounting table 14; a second heater 18b that heats an edge region around the central region of the semiconductor substrate W held on the mounting table 14; a reactant gas supply unit 13 that supplies a reactant gas for a plasma process toward the central region of the semiconductor substrate W held on the mounting table 14; and a control unit 20 that performs a plasma etching process on the semiconductor substrate W while controlling the first heater 18a and the second heater 18b to heat the central region and the edge region of the processing target substrate W held on the mounting table 14 to different temperatures.Type: ApplicationFiled: February 26, 2009Publication date: January 19, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Naoki Matsumoto, Kazuto Takai, Reika Ko, Nobuyuki Okayama
-
Publication number: 20110240598Abstract: A plasma processing apparatus 11 includes a reactant gas supply unit 13 for supplying a reactant gas for a plasma process into a processing chamber 12. The reactant gas supply unit 13 includes a first reactant gas supply unit 61 provided at a center of a dielectric plate 16 and configured to supply the reactant gas in a directly downward direction toward a central region of a processing target substrate W held on a holding table 14; and a second reactant gas supply unit 62 provided at a position directly above the holding table 14 but not directly above the processing target substrate W held on the holding table 14 and configured to supply the reactant gas toward a center of the processing target substrate W held on the holding table 14.Type: ApplicationFiled: August 25, 2009Publication date: October 6, 2011Applicant: TOKYO ELECTRON LIMITEDInventors: Nobuyuki Okayama, Naoki Matsumoto
-
Patent number: 7658816Abstract: A focus ring and a plasma processing apparatus capable of improving an in-surface uniformity of a surface and reducing occurrences of deposition on a backside surface of a peripheral portion of a semiconductor wafer compared to a conventional case are provided. Installed in a vacuum chamber is a susceptor for mounting the semiconductor wafer thereon and a focus ring is installed to surround the semiconductor wafer mounted on the susceptor. The focus ring includes an annular lower member made of a dielectric, and an annular upper member made of a conductive material and mounted on the lower member. The upper member includes a flat portion which is an outer peripheral portion having a top surface positioned higher than a surface to be processed of the semiconductor wafer W, and an inclined portion which is an inner peripheral portion inclined inwardly.Type: GrantFiled: September 3, 2004Date of Patent: February 9, 2010Assignee: Tokyo Electron LimitedInventors: Akira Koshiishi, Hideaki Tanaka, Nobuyuki Okayama, Masaaki Miyagawa, Shunsuke Mizukami, Wataru Shimizu, Jun Hirose, Toshikatsu Wakaki, Tomonori Miwa, Jun Ooyabu, Daisuke Hayashi
-
Patent number: 7544393Abstract: The susceptor of a plasma treating device, or the electrostatic chuck of a substrate table, is formed by ceramic thermal spray method. A thermally sprayed ceramic layer is pore-sealed by methacrylic resin. Resin raw material mainly containing methyl methacrylate is applied to and impregnated into the thermally sprayed ceramic layer and then is cured to thereby fill pores between ceramic particles in the thermally sprayed ceramic layer with methacrylic resin. Methacrylic resin raw material solution, which does not produce pores at curing, can complete perfect pore sealing.Type: GrantFiled: January 12, 2006Date of Patent: June 9, 2009Assignee: Tokyo Electron LimitedInventors: Shinji Muto, Chihiro Taguchi, Nobuyuki Okayama
-
Publication number: 20080087382Abstract: A substrate stage capable of reducing the running cost of a plasma processing apparatus and improving the operation rate of the apparatus. A lower electrode as a substrate stage is disposed in a chamber of the apparatus, and an electrostatic chuck is incorporated in the lower electrode. An oxide film of a IIIA group element of the periodic system, such as for example, a yttria film, having a film thickness falling within the range from 1000 to 2000 ?m, is formed as a sprayed coating on a side wall of the electrostatic chuck.Type: ApplicationFiled: September 27, 2007Publication date: April 17, 2008Applicant: TOKYO ELECTRON LIMITEDInventors: Hideki SUGIYAMA, Nobuyuki Okayama, Nobuyuki Nagayama
-
Publication number: 20070283891Abstract: The present invention is a table for supporting a substrate to be processed, comprising a metallic member, and a ceramic plate laminated to the top surface of the metallic member, characterized in that an electrostatic chuck electrode is embedded in the ceramic plate, that a groove for forming a cooling medium passageway is made in at least one of the back surface of the ceramic plate and the top surface of the metallic member, and that the ceramic plate and the metallic member are joined together with an adhesive layer.Type: ApplicationFiled: March 26, 2007Publication date: December 13, 2007Inventor: Nobuyuki Okayama
-
Publication number: 20070169891Abstract: A focus ring and a plasma processing apparatus capable of improving an in-surface uniformity of a surface and reducing occurrences of deposition on a backside surface of a peripheral portion of a semiconductor wafer compared to a conventional case are provided. Installed in a vacuum chamber is a susceptor for mounting the semiconductor wafer thereon and a focus ring is installed to surround the semiconductor wafer mounted on the susceptor. The focus ring includes an annular lower member made of a dielectric, and an annular upper member made of a conductive material and mounted on the lower member. The upper member includes a flat portion which is an outer peripheral portion having a top surface positioned higher than a surface to be processed of the semiconductor wafer W, and an inclined portion which is an inner peripheral portion inclined inwardly.Type: ApplicationFiled: September 3, 2004Publication date: July 26, 2007Applicant: TOKYO ELECTRON LIMITEDInventors: Akira Koshiishi, Hideaki Tanaka, Nobuyuki Okayama, Masaaki Miyagawa, Shunsuke Mizukami, Wataru Shimizu, Jun Hirose, Toshikatsu Wakaki, Tomonori Miwa, Jun Ooyabu, Daisuke Hayashi
-
Patent number: 7067178Abstract: The susceptor (10) of a plasma treating device, or the electrostatic chuck (12) of a substrate table is formed by ceramic thermal spray method. A ceramic spray layer (12A) is pore-sealed by methacrylic resin (12D). Resin raw material mainly containing methyl methacrylate is applied to and impregnated into the ceramic spray layer and then is cured to thereby fill pores between ceramic particles in the ceramic spray layer with methacrylic resin. Methacrylic resin raw material solution, which does not produce pores at curing, can complete perfect pore sealing.Type: GrantFiled: May 24, 2002Date of Patent: June 27, 2006Assignee: Tokyo Electron LimitedInventors: Shinji Muto, Chihiro Taguchi, Nobuyuki Okayama
-
Publication number: 20060115600Abstract: The susceptor (10) of a plasma treating device, or the electrostatic chuck (12) of a substrate table is formed by ceramic thermal spray method. A ceramic spray layer (12A) is pore-sealed by methacrylic resin (12D). Resin raw material mainly containing methyl methacrylate is applied to and impregnated into the ceramic spray layer and then is cured to thereby fill pores between ceramic particles in the ceramic spray layer with methacrylic resin. Methacrylic resin raw material solution, which does not produce pores at curing, can complete perfect pore sealing.Type: ApplicationFiled: January 12, 2006Publication date: June 1, 2006Applicant: TOKYO ELECTRON LIMITEDInventors: Shinji Muto, Chihiro Taguchi, Nobuyuki Okayama
-
Publication number: 20040200804Abstract: A member of processing a quartz member for a plasma processing device capable of suppressing the production of particles at the beginning of the use thereof and the production of chips thereafter, the quartz member for the plasma processing device, and the plasma processing device having the quartz member mounted thereon, the method comprising the steps of removing a large number of cracks 155 produced, after a diamond grinding, in the quartz member 151 for the plasma processing device used for a shield ring and a focus ring by performing a surface processing with abrasive grains of, for example, #320 to 400 in grain size, and performing the surface processing by using abrasive grains of smaller grain size to remove ruptured layers 163 while maintaining irregularities capable of adhering and holding deposit thereto.Type: ApplicationFiled: March 25, 2004Publication date: October 14, 2004Inventors: Norikazu Sugiyama, Hidehito Saegusa, Nobuyuki Okayama, Shunichi Iimuro, Kosuke Imafuku, Nobuyuki Nagayama, Kouji Mitsuhashi, Hiroyuki Nakayama, Yahui Huang
-
Publication number: 20040168640Abstract: The susceptor (10) of a plasma treating device, or the electrostatic chuck (12) of a substrate table is formed by ceramic thermal spray method. A ceramic spray layer (12A) is pore-sealed by methacrylic resin (12D). Resin raw material mainly containing methyl methacrylate is applied to and impregnated into the ceramic spray layer and then is cured to thereby fill pores between ceramic particles in the ceramic spray layer with methacrylic resin. Methacrylic resin raw material solution, which does not produce pores at curing, can complete perfect pore sealing.Type: ApplicationFiled: November 25, 2003Publication date: September 2, 2004Inventors: Shinji Muto, Chihiro Taguchi, Nobuyuki Okayama
-
Patent number: RE39939Abstract: A processing system has an upper electrode with gas discharge holes of a shape corresponding to the external we of insulating members. The insulating members are formed of a poly(ether etherketone) resin, a polyimide resin, a poly (ether imide) resin or the like. Each insulating member has a step at its outer surface and an internal longitudinal through hole tapered to expand toward the processing chamber. The insulating members are pressed in the gas discharge holes to bring the steps into contact with shoulders formed in the sidewalls of the gas discharge holes. A part of each insulting member, as fitted in the gas discharge hole, projects from a surface of the upper electrode that faces a susceptor.Type: GrantFiled: April 8, 1998Date of Patent: December 18, 2007Assignee: Tokyo Electron LimitedInventors: Nobuyuki Okayama, Hidehito Saegusa, Jun Ozawa, Daisuke Hayashi, Naoki Takayama, Koichi Kazama
-
Patent number: RE39969Abstract: A processing system has an upper electrode with gas discharge holes of a shape corresponding to the external we of insulating members. The insulating members are formed of a poly(ether etherketone) resin, a polyimide resin, a poly (ether imide) resin or the like. Each insulating member has a step at its outer surface and an internal longitudinal through hole tapered to expand toward the processing chamber. The insulating members are pressed in the gas discharge holes to bring the steps into contact with shoulders formed in the sidewalls of the gas discharge holes. A part of each insulating member, as fitted in the gas discharge hole, projects from a surface of the upper electrode that faces a susceptor.Type: GrantFiled: April 8, 1998Date of Patent: January 1, 2008Assignee: Tokyo Electron LimitedInventors: Nobuyuki Okayama, Hidehito Saegusa, Jun Ozawa, Daisuke Hayashi, Naoki Takayama, Koichi Kazama
-
Patent number: RE40046Abstract: A processing system has an upper electrode with gas discharge holes of a shape corresponding to the external we of insulating members. The insulating members are formed of a poly(ether etherketone) resin, a polyimide resin, a poly(ether imide) resin or the like. Each insulating member has a step at its outer surface and an internal longitudinal through hole tapered to expand toward the processing chamber. The insulating members are pressed in the gas discharge holes to bring the steps into contact with shoulders formed in the sidewalls of the gas discharge holes. A part of each insulating member, as fitted in the gas discharge hole, projects from a surface of the upper electrode that faces a susceptor.Type: GrantFiled: April 8, 1998Date of Patent: February 12, 2008Assignee: Tokyo Electron LimitedInventors: Nobuyuki Okayama, Hidehito Saegusa, Jun Ozawa, Daisuke Hayashi, Naoki Takayama, Koichi Kazama