Abstract: Efficiency of operation related to acquisition of a tilt offset of a surveying apparatus is improved. A total station includes a tilt sensor, a tilt offset acquisition unit that acquires a tilt offset of the tilt sensor, a measurement unit that measures a variable value of a phenomenon that can cause the tilt offset to vary, and a determination unit that determines whether to acquire the tilt offset, based on output from the measurement unit.

Abstract: An inverter integrated gas supply device includes a fluid machine configured to discharge air, an electric motor having a motor casing and configured to drive the fluid machine, an inverter having an inverter casing and configured to supply a drive current to the electric motor, a motor-side connection part attached to the motor casing and configured to receive the drive current, and an inverter-side connection part attached to the inverter casing, connected to the motor-side connection part. The motor-side connection part includes a motor-side connector housing, and a motor connector. The inverter-side connection part includes an inverter-side connector housing, and an inverter connector. A position of the motor connector relative to the motor-side connector housing is fixed; and a position of the inverter connector relative to the inverter-side connector housing is variable.

Abstract: The present invention provides an information providing apparatus including a determining unit configured to determine an added value to be provided to a user of a portable electric power supply device including a storage battery that stores electric power to be supplied to electrical equipment detachably connected, wherein in a case where a kind of the electrical equipment is a specified kind of electrical equipment, the determining unit determines the added value to be provided to the user in such a manner that the added value to be provided to the user is higher than an added value in a case where the kind of the electrical equipment is not the specified kind of electrical equipment.

Abstract: A press working method for forming by a press working apparatus, in a film material made of resin, a passage hole through which a fluid for a fuel cell flows, includes a placing step, a gripping step, and a piercing step. In the piercing step, a secondary die and a holder grip an outer peripheral portion of the film material. In the piercing step, a piercing punch punches out the film material is a state in which the press working apparatus does not contact an upper surface of the film material in an adjacent portion surrounding a portion to be punched out by the piercing punch.

Abstract: A load estimation device measures a voltage and a current supplied to a load connected to a portable power-supply, obtains a feature amount of the load from the voltage and the current. The device obtains a stored feature amount of each of loads, and related load information indicating a plurality of loads which are used in association with each other. The device estimates a load connected to the power-supply on the basis of the obtained feature amount and a stored feature amount, and predicts a load which is not connected to the power-supply and which is a load related to the estimated load on the basis of the related load information.

Abstract: A power supply system comprises a portable first power supply device and second power supply device. The portable first power supply device has a handle to be gripped by a hand of a user. A supply unit of the portable first power supply comprises an inverter circuit which converts at least a portion of excess power into an alternating current, and supplies to the second power supply device via a second connection unit and a power line, power of the alternating current outputted from the inverter circuit.

Abstract: The present invention provides an information providing apparatus including a determining unit configured to determine an added value to be provided to a user of a portable electric power supply device including a storage battery that stores electric power to be supplied to electrical equipment detachably connected, wherein in a case where a kind of the electrical equipment is a specified kind of electrical equipment, the determining unit determines the added value to be provided to the user in such a manner that the added value to be provided to the user is higher than an added value in a case where the kind of the electrical equipment is not the specified kind of electrical equipment.

Abstract: Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.

Abstract: An information processing apparatus comprises an acquisition unit configured to acquire information according to the usage circumstances of the portable electric generator; an estimation unit configured to estimate a type of an electrical device that is connected, based on a measurement result with respect to a voltage and a current when the portable electric generator supplied electric power that is included in the information according to the usage circumstances; and a calculation unit configured to calculate a rental fee associated with an electric power amount supplied by the portable electric generator at the rental destination, using a billing coefficient corresponding to an electrical device estimated by the estimation unit, and the measurement result.

Abstract: Bit line stacks and methods of forming bit line stacks are described herein. A bit line stack comprises: a polysilicon layer; an adhesion layer on the polysilicon layer; a barrier metal layer on the adhesion layer; an interface layer on the barrier metal layer; a resistance reducing layer on the interface layer; and a conductive layer on the resistance reducing layer. A bit line stack having the resistance reducing layer has a resistance at least 5% lower than a comparable bit line stack without the resistance reducing layer. The resistance reducing layer may include silicon oxide or silicon nitride. The resistance reducing layer may be formed using one or more of a physical vapor deposition (PVD), a radio frequency-PVD, a pulsed-PVD, chemical vapor deposition (CVD), atomic layer deposition (ALD) or sputtering process.

Abstract: Embodiments of the present disclosure generally relate to methods for forming or otherwise producing metal silicides on a silicon surface of substrate. Exemplary metal silicides can be or include titanium silicide, cobalt silicide, nickel silicide, molybdenum silicide, or alloys thereof. In one or more embodiments, a method of forming a metal silicide is provided and includes removing a native oxide from a substrate to reveal a silicon surface of the substrate during a cleaning process, depositing a metallic layer on the silicon surface during a deposition process, and heating the substrate contained within a process region containing hydrogen gas during a silicidation process to produce a metal silicide layer on the substrate from the metallic layer and the silicon surface.

Abstract: Bit line stacks and methods of forming bit line stacks are described herein. A bit line stack comprises: a polysilicon layer; an adhesion layer on the polysilicon layer; a barrier metal layer on the adhesion layer; an interface layer on the barrier metal layer; a resistance reducing layer on the interface layer; and a conductive layer on the resistance reducing layer. A bit line stack having the resistance reducing layer has a resistance at least 5% lower than a comparable bit line stack without the resistance reducing layer. The resistance reducing layer may include silicon oxide or silicon nitride. The resistance reducing layer may be formed using one or more of a physical vapor deposition (PVD), a radio frequency-PVD, a pulsed-PVD, chemical vapor deposition (CVD), atomic layer deposition (ALD) or sputtering process.

Abstract: An information providing apparatus provides information concerning a lendable electric power supply device. More specifically, the information providing apparatus for providing information via a network in response to a request from a terminal, performs the following processes. The apparatus receives, from the terminal via the network, an information request concerning a lendable electric power supply device configured to supply electric power, acquires information concerning electric power that can be provided by the electric power supply device and a lending price of the electric power supply device by communicating with the electric power supply device via the network. The apparatus further edits, based on the acquired information, information to be provided to the terminal that has issued the information request, and transmits the edited information to the terminal that has issued the information request via the network.

Abstract: An information providing device includes: a reception unit configured to receive current location information on a transportable power supply device from the transportable power supply device that supplies power to an electric apparatus detachably connected thereto; an information generation unit configured to generate use place information indicating a place of use of the transportable power supply device based on the received current location information; and a transmission unit configured to transmit the use place information to a service provider's terminal. The reception unit receives information on the electric apparatus connected to the transportable power supply device from the transportable power supply device. The use place information includes information on a type of the electric apparatus connected to the transportable power supply device.

Abstract: Embodiments of methods and associated apparatus for filling a feature in a substrate are provided herein. In some embodiments, a method of filling a feature in a substrate includes: depositing a seed layer of tungsten nitride in the feature via a physical vapor deposition (PVD) process; depositing a liner layer of tungsten on the seed layer of tungsten nitride in the feature via a PVD process; and subsequently filling the feature with a tungsten bulk fill via a chemical vapor deposition (CVD) process.

Abstract: Bit line stacks and methods of forming bit line stacks are described herein. A bit line stack comprises: a polysilicon layer; an adhesion layer on the polysilicon layer; a barrier metal layer on the adhesion layer; an interface layer on the barrier metal layer; a resistance reducing layer on the interface layer; and a conductive layer on the resistance reducing layer. A bit line stack having the resistance reducing layer has a resistance at least 5% lower than a comparable bit line stack without the resistance reducing layer. The resistance reducing layer may include silicon oxide or silicon nitride. The resistance reducing layer may be formed using one or more of a physical vapor deposition (PVD), a radio frequency-PVD, a pulsed-PVD, chemical vapor deposition (CVD), atomic layer deposition (ALD) or sputtering process.

Abstract: Bit line stacks and methods of forming bit line stacks are described herein. A bit line stack comprises: a polysilicon layer; an adhesion layer on the polysilicon layer; a barrier metal layer on the adhesion layer; an interface layer on the barrier metal layer; a resistance reducing layer on the interface layer; and a conductive layer on the resistance reducing layer. A bit line stack having the resistance reducing layer has a resistance at least 5% lower than a comparable bit line stack without the resistance reducing layer. The resistance reducing layer may include silicon oxide or silicon nitride. The resistance reducing layer may be formed using one or more of a physical vapor deposition (PVD), a radio frequency-PVD, a pulsed-PVD, chemical vapor deposition (CVD), atomic layer deposition (ALD) or sputtering process.

Abstract: Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.

Abstract: A management device is connected to an AC power line provided with a plurality of connection ports, each of which can be connected to an electric device including a power storage unit. The management device includes a measurement unit configured to measure an electric signal on the AC power line, a determination unit configured to determine a type of the electric device connected to the AC power line via a connection port in the plurality of connection ports based on a measurement result of the measurement unit, and a first prediction unit configured to predict an amount of power supply on the AC power line due to discharge of the power storage unit based on a determination result of the determination unit.

Abstract: A load estimating device measures a voltage and a current supplied to a load connected with a generator, calculates a feature amount of the load, senses a remaining amount of fuel, outputs a time during which the load is continuously operable. The device estimates what the load connected with the generator is, based on the calculated feature amount and the feature amounts stored in a storage, and determines the time during which the estimated load is continuously operable, based on a power consumption of the estimated load, and the remaining amount of fuel. The device has a load registration mode for causing the storage to store therein a feature amount of a new load that is not stored in a storage.