Abstract: [Problem] To provide a method for producing a hydrogenated conjugated diene polymer that is excellent in the improvement in dispersibility at the time of compounding with a filler, is excellent in the reduction in hysteresis loss after compounding, and enables the formation of a polymer alloy which has excellent processability at the time of compounding with a thermoplastic resin or the like and has excellent physical properties after compounding. [Means for solution] A method for producing a hydrogenated conjugated diene polymer, the method comprising a step of polymerizing at least a conjugated diene compound in the presence of a polymerization initiator composed of an amine compound having at least one structure of the formulae (x) and (y) and at least one metal compound selected from alkali metal compounds and alkaline earth metal compounds to obtain a conjugated diene polymer and a step of hydrogenating the conjugated diene polymer.

Abstract: A thermoplastic elastomer composition that exhibits excellent rubber elasticity, etc. is obtained by dynamically heating a polymer composition in the presence of the crosslinking agent, the polymer composition including an ?-olefin thermoplastic resin (A), and an oil-extended ethylene copolymer (B) that includes an ethylene copolymer that satisfies given conditions, and 50 to 150 parts by mass of a first mineral oil-based softener based on 100 parts by mass of the ethylene copolymer, the content of the oil-extended ethylene copolymer (B) being 30 mass % or more based on the total amount (=100 mass %) of the polymer component including the ?-olefin thermoplastic resin (A) and the oil-extended ethylene copolymer (B).

Abstract: A thermoplastic elastomer composition that exhibits excellent rubber elasticity, etc. is obtained by dynamically heating a polymer composition in the presence of the crosslinking agent, the polymer composition including an ?-olefin thermoplastic resin (A), and an oil-extended ethylene copolymer (B) that includes an ethylene copolymer that satisfies given conditions, and 50 to 150 parts by mass of a first mineral oil-based softener based on 100 parts by mass of the ethylene copolymer, the content of the oil-extended ethylene copolymer (B) being 30 mass % or more based on the total amount (=100 mass %) of the polymer component including the ?-olefin thermoplastic resin (A) and the oil-extended ethylene copolymer (B).

Abstract: In a vehicle roof structure, a roof panel has a central opening in which a roof glass is supported. A roof molding is mounted to molding mounting grooves that are formed along connecting portions between the roof panel and roof side rails extending along the roof panel. The roof molding includes a molding body and support legs. The molding body also includes: a lip portion that is formed at one side edge thereof and protrudes out of the molding mounting groove to cover a peripheral edge of the roof glass; and an inclined portion which is formed at the other side edge thereof and is inclined smoothly toward a bottom of the molding mounting groove.

Abstract: A hydrogenated diene-based copolymer satisfying predetermined conditions, which is obtained by hydrogenating a block copolymer containing at least two polymer blocks (A) composed mainly of a vinyl aromatic compound and at least one vinyl aromatic compound-conjugated diene compound copolymer block (B). The hydrogenated diene-based copolymer is per se superior in processability, flexibility, weather resistance, vibration-damping property and mechanical properties, and can provide a shaped article highly flexible and superior in various properties such as mechanical properties, appearance, mar resistance, weather resistance, heat resistance, vibration-damping property, processability and the like.

Abstract: In a vehicle roof structure, a roof panel has a central opening in which a roof glass is supported. A roof molding is mounted to molding mounting grooves that are formed along connecting portions between the roof panel and roof side rails extending along the roof panel. The roof molding includes a molding body and support legs. The molding body also includes: a lip portion that is formed at one side edge thereof and protrudes out of the molding mounting groove to cover a peripheral edge of the roof glass; and an inclined portion which is formed at the other side edge thereof and is inclined smoothly toward a bottom of the molding mounting groove.

Abstract: An objective of the present invention is to provide a hydrogenated modified polymer which can afford a molded body excellent in improvement in the balance among the impact resistance, the strength, the adherability and as the appearance, and a process for producing the same as well as a composition containing the same. Another objective is to provide a composition which can afford a molded body excellent in the balance among the flame retardancy, the tensile strength, the tensile extension, the heat resistance, the characteristic at low temperature, the insulation property, the pliability and the like. The hydrogenated modified polymer of the invention is a hydrogenated polymer of a modified conjugated diene-based polymer obtained by reacting an alkoxysilane compound to a polymer which is polymerized a conjugated diene or a conjugated diene and another monomer using an organic alkali metal compound as a polymerization initiator in an inert organic solvent such as cyclohexane and the like.

Abstract: An objective of the present invention is to provide a hydrogenated modified polymer which can afford a molded body excellent in improvement in the balance among the impact resistance, the strength, the adherability and as the appearance, and a process for producing the same as well as a composition containing the same. Another objective is to provide a composition which can afford a molded body excellent in the balance among the flame retardancy, the tensile strength, the tensile extension, the heat resistance, the characteristic at low temperature, the insulation property, the pliability and the like. The hydrogenated modified polymer of the invention is a hydrogenated polymer of a modified conjugated diene-based polymer obtained by reacting an alkoxysilane compound to a polymer which is polymerized a conjugated diene or a conjugated diene and another monomer using an organic alkali metal compound as a polymerization initiator in an inert organic solvent such as cyclohexane and the like.

Abstract: In an IC device, an IC body having a predetermined function and high-frequency circuits for testing high-frequency characteristics of the IC body are formed on a single chip. The test circuits include an L-H frequency conversion circuit arranged on the input side of the IC body and an H-L frequency conversion circuit arranged on the output side. The test circuits can switch a connecting state between the conversion circuits and the IC body in response to an external control signal. The test circuits can be disconnected from the IC body after a test is completed.

Abstract: A GaAs JFET according to the present invention is formed as follows. First, an n type active layer is formed on a GaAs substrate. Then, a gate electrode containing a group II element is formed on the n type active layer. With the gate electrode being used as a mask, an n type impurity is ion-implanted in the GaAs substrate with a high concentration in a self-aligned fashion with respect to the gate electrode. Heat-treatment is then performed on the resultant structure to diffuse the group II element in the gate electrode into the n type active layer, forming a p type gate region. At the same time, the ion-implanted n type impurity is activated, forming source and drain regions.

Abstract: A semiconductor integrated circuit device according to the present invention comprising an electric circuit formed in a semiconductor substrate, said circuit including first and second nodes between which a potential difference is provided, a wiring of a large ground capacitance connected to the first node, and a bypass capacitor connected to the second node, said wiring and bypass capacitor being of an integral structure prepared by laminating an upper conductor film pattern connected to the second node via an insulating film on a lower conductor film pattern connected to the first node. A MIM-structure in which a wiring and a bypass capacitor are made integral is employed in the semiconductor integrated circuit device of the present invention, making it possible to eliminate the large area required for forming the independent bypass capacitor. Also, the ratio of the ground capacitance of the wiring to the capacitance of the bypass capacitor is constant regardless of the change in the length of the wiring.

Abstract: A gate array integrated circuit in which gate cells are each composed of a DCFL circuit using Schottky-barrier FETs. A plurality of basic gate cells is arrayed in one direction to form a basic cell array, and such basic cell arrays are arranged parallel to each other. VDD lines and GND lines are provided to apply an operating voltage to the basic gate cells. In order to stably operate the gate array integrated circuit of DCFL structure in which the logical amplitude and noise margin are small, the VDD lines and the GND lines are arranged perpendicular to each other such that the number of the basic gate cells which are connected to each of the VDD lines is larger than that of the basic gate cells which are connected to each of the GND lines. According to this layout, the potential difference (voltage drop) developed in the GND lines by operation current is reduced.

Abstract: An etched SiO.sub.2 film component serving as a mask at the time of formation of source and drain electrodes in a surface layer of a GaAs substrate by means of ion implantation is side-etched before a gate electrode is formed. An SiO.sub.2 film component has a narrowed width smaller than a distance between the source and drain electrodes while the SiO.sub.2 film component supports a metal mask patterned film at its top surface. The SiO.sub.2 film component is replaced with a metal layer serving as a gate of a self-aligned Schottky gate FET. According to this method, a metal with high heat resistance need not be used as a metal material of the gate layer.

Abstract: In an integrated logic circuit employing normally-off type FET's, it is difficult, but desirable to realize a NAND gate due to unwanted flow of the forward current to the next stage.In accordance with the invention, a stable NAND gate operation can be realized by introducing a NOR gate into all gate electrodes of the inputs of the NAND gate, except one gate electrode thereof of which source is grounded.

Abstract: A process for manufacturing a buried gate field effect transistor having a small effective gate length, which process enables precise control of the threshold voltage. First, a compound semiconductor crystal having a first impurity region as a source region, a second impurity region as a drain region and a channel layer buried inside the compound semiconductor crystal is prepared by a conventional process. A V-shaped groove is then formed with an etching solution having high selectivity toward the crystal face in the gate region of this compound semiconductor crystal. Onto the inner wall surface of the V-shaped groove, a metal likely to form an alloy type of Schottky junction with the compound semiconductor is vapor-deposited. The resultant structure is heated, while measuring the threshold voltage, to form an alloy type of Schottky junction and for use of this junction as a gate electrode.

Abstract: A Schottky gate FET is fabricated by forming on a semiconductor substrate first and second stacks facing each other. Each stack is constructed by an ohmic electrode and a spacer film. On the substrate having stacks formed thereon an insulation layer is formed and is anisotropically etched in the direction of its thickness until the planar surface portions are exposed. As a result, portions of the insulation layer remain on opposing side walls of the stacks. After removing the spacer films to define stepped portions between each remaining portion and each electrode, a layer of a metallic material capable of forming a Schottky barrier with the substrate is formed. The remaining portions are removed to pattern the metallic material layer, thereby forming a Shottky gate electrode.

Abstract: Thin epitaxial layers of Group III-V semiconductor materials are grown from solution with improved thickness reproducibility and surface smoothness by a method including the steps of preparing an ideally saturated solution of the semiconductor material in a metal melt preferably by keeping an undersaturated solution in contact with the crystalline semiconductor material at a predetermined temperature, supercooling the saturated solution and then bringing the supercooled solution into contact with a substrate. A growth boat assembly for this method has at least one set of two boats slidably stacked one upon another, wherein the upper boat has a solution reservoir and the lower boat has two depressions respectively for receiving therein the substrate and the crystalline semiconductor material as the source material at the saturation step, arranged such that a solution contained in the reservoir can selectively be contacted with either of the source material and the substrate and isolated from both.