Abstract: A multilayer mirror having a cap with a multilayer structure including a top layer and a series of bilayers each having an absorber layer and a spacer layer, where the materials for the top layer, absorber layers, and spacer layers are chosen to resist blistering.

Abstract: A target material supply apparatus for an extreme ultraviolet (EUV) light source includes a tube that includes a first end, a second end, and a sidewall defined between the first and second ends. At least a portion of an outer surface of the tube includes an electrically insulating material, the first end receives a pressurized target material, and the second end defines an orifice through which the pressurized target material passes to produce a stream of target material droplets. The target material supply apparatus also includes an electrically conductive coating on the outer surface of the tube. The coating is configured to electrically connect the outer surface of the tube to ground to thereby reduce surface charge on the outer surface.

Abstract: A multilayer mirror having a cap with a multilayer structure including a top layer and a series of bilayers each having an absorber layer and a spacer layer, where the materials for the top layer, absorber layers, and spacer layers are chosen to resist blistering.

Abstract: A target material supply apparatus for an extreme ultraviolet (EUV) light source includes a tube that includes a first end, a second end, and a sidewall defined between the first and second ends. At least a portion of an outer surface of the tube includes an electrically insulating material, the first end receives a pressurized target material, and the second end defines an orifice through which the pressurized target material passes to produce a stream of target material droplets. The target material supply apparatus also includes an electrically conductive coating on the outer surface of the tube. The coating is configured to electrically connect the outer surface of the tube to ground to thereby reduce surface charge on the outer surface.

Abstract: A target material supply apparatus for an extreme ultraviolet (EUV) light source includes a tube that includes a first end, a second end, and a sidewall defined between the first and second ends. At least a portion of an outer surface of the tube includes an electrically insulating material, the first end receives a pressurized target material, and the second end defines an orifice through which the pressurized target material passes to produce a stream of target material droplets. The target material supply apparatus also includes an electrically conductive coating on the outer surface of the tube. The coating is configured to electrically connect the outer surface of the tube to ground to thereby reduce surface charge on the outer surface.

Abstract: A target material supply apparatus for an extreme ultraviolet (EUV) light source includes a tube that includes a first end, a second end, and a sidewall defined between the first and second ends. At least a portion of an outer surface of the tube includes an electrically insulating material, the first end receives a pressurized target material, and the second end defines an orifice through which the pressurized target material passes to produce a stream of target material droplets. The target material supply apparatus also includes an electrically conductive coating on the outer surface of the tube. The coating is configured to electrically connect the outer surface of the tube to ground to thereby reduce surface charge on the outer surface.

Abstract: A device is disclosed which may comprise a system generating a plasma at a plasma site, the plasma producing EUV radiation and ions exiting the plasma. The device may also include an optic, e.g., a multi-layer mirror, distanced from the site by a distance, d, and a flowing gas disposed between the plasma and optic, the gas establishing a gas pressure sufficient to operate over the distance, d, to reduce ion energy below a pre-selected value before the ions reach the optic. In one embodiment, the gas may comprise hydrogen and in a particular embodiment, the gas may comprise greater than 50 percent hydrogen by volume.

Abstract: An apparatus for generating EUV radiation is disclosed which may include a target material, a system generating a laser beam for interaction with the target material and a pair of electrodes. A pulse power electrical circuit may be provided for generating a discharge between said electrodes to produce EUV radiation from said target material.

Abstract: Systems and methods are disclosed for reducing the influence of plasma generated debris on internal components of an EUV light source. In one aspect, an EUV metrology monitor is provided which may have a heater to heat an internal multi-layer filtering mirror to a temperature sufficient to remove deposited debris from the mirror. In another aspect, a device is disclosed for removing plasma generated debris from an EUV light source collector mirror having a different debris deposition rate at different zones on the collector mirror. In a particular aspect, an EUV collector mirror system may comprise a source of hydrogen to combine with Li debris to create LiH on a collector surface; and a sputtering system to sputter LiH from the collector surface. In another aspect, an apparatus for etching debris from a surface of a EUV light source collector mirror with a controlled plasma etch rate is disclosed.

Abstract: A device is disclosed which may comprise a system generating a plasma at a plasma site, the plasma producing EUV radiation and ions exiting the plasma. The device may also include an optic, e.g., a multi-layer mirror, distanced from the site by a distance, d, and a flowing gas disposed between the plasma and optic, the gas establishing a gas pressure sufficient to operate over the distance, d, to reduce ion energy below a pre-selected value before the ions reach the optic. In one embodiment, the gas may comprise hydrogen and in a particular embodiment, the gas may comprise greater than 50 percent hydrogen by volume.

Abstract: A device is disclosed which may comprise a system generating a plasma at a plasma site, the plasma producing EUV radiation and ions exiting the plasma. The device may also include an optic, e.g., a multi-layer mirror, distanced from the site by a distance, d, and a flowing gas disposed between the plasma and optic, the gas establishing a gas pressure sufficient to operate over the distance, d, to reduce ion energy below a pre-selected value before the ions reach the optic. In one embodiment, the gas may comprise hydrogen and in a particular embodiment, the gas may comprise greater than 50 percent hydrogen by volume.

Abstract: An EUV light source is disclosed that may include a laser source, e.g. CO2 laser, a plasma chamber, and a beam delivery system for passing a laser beam from the laser source into the plasma chamber. Embodiments are disclosed which may include one or more of the following; a bypass line may be provided to establish fluid communication between the plasma chamber and the auxiliary chamber, a focusing optic, e.g. mirror, for focusing the laser beam to a focal spot in the plasma chamber, a steering optic for steering the laser beam focal spot in the plasma chamber, and an optical arrangement for adjusting focal power.

Abstract: An EUV light source is disclosed that may include a laser source, e.g. CO2 laser, a plasma chamber, and a beam delivery system for passing a laser beam from the laser source into the plasma chamber. Embodiments are disclosed which may include one or more of the following; a bypass line may be provided to establish fluid communication between the plasma chamber and the auxiliary chamber, a focusing optic, e.g. mirror, for focusing the laser beam to a focal spot in the plasma chamber, a steering optic for steering the laser beam focal spot in the plasma chamber, and an optical arrangement for adjusting focal power.

Abstract: An EUV light source and method include a magnetic plasma confinement mechanism creating a magnetic field in the vicinity of a target ignition site to confine the plasma to the vicinity of the target ignition site, which is controlled using outputs from a target tacking system.

Abstract: An EUV light source apparatus and method are disclosed, which may comprise a pulsed laser providing laser pulses at a selected pulse repetition rate focused at a desired target ignition site; a target formation system providing discrete targets at a selected interval coordinated with the laser pulse repetition rate; a target steering system intermediate the target formation system and the desired target ignition site; and a target tracking system providing information about the movement of target between the target formation system and the target steering system, enabling the target steering system to direct the target to the desired target ignition site.

Abstract: A device is disclosed which may comprise a system generating a plasma at a plasma site, the plasma producing EUV radiation and ions exiting the plasma. The device may also include an optic, e.g., a multi-layer mirror, distanced from the site by a distance, d, and a flowing gas disposed between the plasma and optic, the gas establishing a gas pressure sufficient to operate over the distance, d, to reduce ion energy below a pre-selected value before the ions reach the optic. In one embodiment, the gas may comprise hydrogen and in a particular embodiment, the gas may comprise greater than 50 percent hydrogen by volume.

Abstract: Systems and methods are disclosed for protecting an EUV light source plasma production chamber optical element surface from debris generated by plasma formation. In one aspect of an embodiment of the present invention, a shield is disclosed which comprises at least one hollow tube positioned between the optical element and a plasma formation site. The tube is oriented to capture debris while allowing light to pass through the tube's lumen via reflection at relatively small angles of grazing incidence. In another aspect of an embodiment of the present invention, a shield is disclosed which is heated to a temperature sufficient to remove one or more species of debris material that has deposited on the shield. In yet another aspect of an embodiment of the present invention, a system is disclosed which a shield is moved from a light source plasma chamber to a cleaning chamber where the shield is cleaned.

Abstract: The present invention provides a reliable, high-repetition rate, production line compatible high energy photon source. A very hot plasma containing an active material is produced in vacuum chamber. The active material is an atomic element having an emission line within a desired extreme ultraviolet (EUV) range. A pulse power source comprising a charging capacitor and a magnetic compression circuit comprising a pulse transformer, provides electrical pulses having sufficient energy and electrical potential sufficient to produce the EUV light at an intermediate focus at rates in excess of 5 Watts. In preferred embodiments designed by Applicants in-band, EUV light energy at the intermediate focus is 45 Watts extendable to 105.8 Watts.

Abstract: An apparatus and method is described which may comprise a plasma produced extreme ultraviolet (“EUV”) light source multilayer collector which may comprise a plasma formation chamber; a shell within the plasma formation chamber in the form of a collector shape having a focus; the shell having a sufficient size and thermal mass to carry operating heat away from the multilayer reflector and to radiate the heat from the surface of the shell on a side of the shell opposite from the focus. The material of the shell may comprise a material selected from a group which may comprise silicon carbide, silicon, Zerodur or ULE glass, aluminum, beryllium, molybdenum, copper and nickel. The apparatus and method may comprise at least one radiative heater directed at the shell to maintain the steady state temperature of the shell within a selected range of operating temperatures.

Abstract: An apparatus/method may comprise, a multi-layer reflecting coating forming an EUV reflective surface which may comprise an inter-diffusion barrier layer which may comprise a carbide selected from the group ZrC and NbC or a boride selected from the group ZrB2 and NbB2 or a disilicide selected from the group ZrSi2 and NbSi2 or a nitride selected from the group BN, ZrN, NbN, BN, ScN and Si3N4. The apparatus and method may comprise an EUV light source collector which may comprise a collecting mirror which may comprise a normal angle of incidence multi-layer reflecting coating; an inter-diffusion barrier layer comprising a material selected from the group comprising a carbide selected from the group ZrC and NbC, or a boride selected from the group ZrB2 and NbB2 or a disilicide selected from the group ZrSi2 and NbSi2 a nitride selected from the group BN, ZrN, NbN, BN, ScN and Si3N4.