Patents by Inventor Noriaki Fukiage
Noriaki Fukiage has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11970768Abstract: There is provided a method of forming a silicon nitride film on a substrate having first and second films formed thereon, wherein the first film and the second film have different incubation times. The method includes: supplying a processing gas composed of a silicon halide having Si—Si bonds to the substrate; supplying a non-plasmarized second nitriding gas to the substrate; forming a thin silicon nitride layer covering the first film and the second film by repeating the supplying the processing gas and the supplying the second nitriding gas in a sequential order; supplying a plasmarized modifying gas to the substrate and modifying the thin silicon nitride layer; and forming the silicon nitride film on the modified thin silicon nitride layer by supplying the raw material gas and the first nitriding gas to the substrate.Type: GrantFiled: August 14, 2020Date of Patent: April 30, 2024Assignee: TOKYO ELECTRON LIMITEDInventors: Hideomi Hane, Shimon Otsuki, Takeshi Oyama, Ren Mukouyama, Jun Ogawa, Noriaki Fukiage
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Patent number: 11725276Abstract: A plasma purge method that is performed after dry cleaning in a process container and before applying a deposition process to a substrate includes: (a) activating and supplying a first process gas containing Cl2 in the process container; and (b) activating and supplying a second process gas containing H2 and O2 in the process container.Type: GrantFiled: September 15, 2021Date of Patent: August 15, 2023Assignee: Tokyo Electron LimitedInventors: Hideomi Hane, Hyunjoon Bang, Noriaki Fukiage
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Publication number: 20230175125Abstract: With respect to a cleaning method of cleaning an inside of a processing chamber in a film deposition apparatus including a rotary table rotatably provided in the processing chamber, multiple mounting areas being provided on the rotary table in a circumferential direction, the cleaning method includes (a) discharging a carrier gas and a cleaning gas with rotating the rotary table, a flow rate of the carrier gas being adjusted to a first flow rate, (b) discharging the carrier gas and the cleaning gas with rotating the rotary table, the flow rate of the carrier gas being adjusted to a second flow rate less than the first flow rate, and (c) performing switching from (a) to (b) and switching from (b) to (a) a predetermined number of times while the rotary table rotates by one revolution, the predetermined number being equal to a number of the multiple mounting areas.Type: ApplicationFiled: November 9, 2022Publication date: June 8, 2023Inventors: Hideomi HANE, Akihiro KURIBAYASHI, Noriaki FUKIAGE
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Patent number: 11508571Abstract: A film forming method includes: rotating a rotary table to revolve a substrate which is placed on the rotary table and has a recess in its surface; supplying a raw material gas to a first region on the rotary table; supplying an ammonia gas to a second region on the rotary table; forming a first SiN film in the recess by supplying the raw material gas to the first region and supplying the ammonia gas to the second region at a first flow rate, while the rotary table rotates at a first rotation speed; and forming a second SiN film in the recess such that the second SiN film is laminated on the first SiN film by supplying the raw material gas to the first region and supplying the ammonia gas to the second region at a second flow rate, while the rotary table rotates at a second rotation speed.Type: GrantFiled: August 13, 2020Date of Patent: November 22, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Jun Ogawa, Noriaki Fukiage
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Publication number: 20220081766Abstract: A plasma purge method that is performed after dry cleaning in a process container and before applying a deposition process to a substrate includes: (a) activating and supplying a first process gas containing N2 in the process container; and (b) activating and supplying a second process gas containing H2 and O2 in the process container.Type: ApplicationFiled: September 15, 2021Publication date: March 17, 2022Inventors: Hideomi HANE, Hyunjoon BANG, Noriaki FUKIAGE
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Publication number: 20220081764Abstract: A plasma purge method that is performed after dry cleaning in a process container and before applying a deposition process to a substrate includes: (a) activating and supplying a first process gas containing Cl2 in the process container; and (b) activating and supplying a second process gas containing H2 and O2 in the process container.Type: ApplicationFiled: September 15, 2021Publication date: March 17, 2022Inventors: Hideomi HANE, Hyunjoon BANG, Noriaki FUKIAGE
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Patent number: 11201053Abstract: A method for forming a silicon nitride film to cover a stepped portion formed by exposed surfaces of first and second base films in a substrate, includes: forming a nitride film or a seed layer to cover the stepped portion, wherein the nitride film is formed by supplying, to the substrate, a nitrogen-containing base-film nitriding gas for nitriding the base films, exposing the substrate to plasma and nitriding the surface of the stepped portion, and the seed layer is composed of a silicon-containing film formed by supplying a raw material gas of silicon to the substrate and is configured such that the silicon nitride film uniformly grows on the surfaces of the base films; and forming the silicon nitride film on the seed layer by supplying, to the substrate, a second raw material gas of silicon and a silicon-nitriding gas for nitriding silicon.Type: GrantFiled: June 2, 2020Date of Patent: December 14, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Noriaki Fukiage, Takayuki Karakawa, Toyohiro Kamada, Akihiro Kuribayashi, Takeshi Oyama, Jun Ogawa, Kentaro Oshimo, Shimon Otsuki, Hideomi Hane
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Patent number: 11171014Abstract: There is provided a substrate processing method, including: forming a silicon nitride film laminated on an etching target film by supplying a film forming gas to a substrate; oxidizing a surface of the silicon nitride film to form an oxide layer by supplying an oxidizing gas to the substrate; and etching the etching target film by supplying an etching gas containing halogen to the substrate, in a state in which the etching target film and the oxide layer are exposed on a surface of the substrate.Type: GrantFiled: June 7, 2018Date of Patent: November 9, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Hideomi Hane, Kentaro Oshimo, Shimon Otsuki, Jun Ogawa, Noriaki Fukiage, Hiroaki Ikegawa, Yasuo Kobayashi, Takeshi Oyama
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Publication number: 20210054501Abstract: A film forming method of forming a silicon nitride film on a substrate, which includes a first film and a second film having different incubation times when a source gas containing silicon and a first nitriding gas for nitriding the silicon are supplied, includes: supplying a plasmarized hydrogen gas to the substrate; supplying a processing gas formed of silicon halide to the substrate; forming a thin layer of silicon covering the first film and the second film by alternately and repeatedly performing the supplying the plasmarized hydrogen gas and the supplying the processing gas; forming a thin layer of silicon nitride by supplying a second nitriding gas for nitriding the thin layer of silicon to the substrate; and forming the silicon nitride film on the thin layer of the silicon nitride by supplying the source gas and the first nitriding gas to the substrate.Type: ApplicationFiled: August 10, 2020Publication date: February 25, 2021Inventors: Hideomi HANE, Takeshi OYAMA, Shimon OTSUKI, Ren MUKOUYAMA, Noriaki FUKIAGE, Jun OGAWA
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Publication number: 20210057207Abstract: A film forming method includes: rotating a rotary table to revolve a substrate which is placed on the rotary table and has a recess in its surface; supplying a raw material gas to a first region on the rotary table; supplying an ammonia gas to a second region on the rotary table; forming a first SiN film in the recess by supplying the raw material gas to the first region and supplying the ammonia gas to the second region at a first flow rate, while the rotary table rotates at a first rotation speed; and forming a second SiN film in the recess such that the second SiN film is laminated on the first SiN film by supplying the raw material gas to the first region and supplying the ammonia gas to the second region at a second flow rate, while the rotary table rotates at a second rotation speed.Type: ApplicationFiled: August 13, 2020Publication date: February 25, 2021Inventors: Jun OGAWA, Noriaki FUKIAGE
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Publication number: 20210054502Abstract: There is provided a method of forming a silicon nitride film on a substrate having first and second films formed thereon, wherein the first film and the second film have different incubation times. The method includes: supplying a processing gas composed of a silicon halide having Si—Si bonds to the substrate; supplying a non-plasmarized second nitriding gas to the substrate; forming a thin silicon nitride layer covering the first film and the second film by repeating the supplying the processing gas and the supplying the second nitriding gas in a sequential order; supplying a plasmarized modifying gas to the substrate and modifying the thin silicon nitride layer; and forming the silicon nitride film on the modified thin silicon nitride layer by supplying the raw material gas and the first nitriding gas to the substrate.Type: ApplicationFiled: August 14, 2020Publication date: February 25, 2021Inventors: Hideomi HANE, Shimon OTSUKI, Takeshi OYAMA, Ren MUKOUYAMA, Jun OGAWA, Noriaki FUKIAGE
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Patent number: 10900121Abstract: There is provided a film formation processing method for forming, in a vacuum atmosphere, a silicon nitride film along an inner wall surface of a recess constituting a pattern formed on a surface of a substrate, which includes: forming the silicon nitride film on the substrate by repeating, plural times, a process of supplying a raw material gas containing silicon to the substrate and subsequently, supplying an ammonia gas to the substrate to generate a silicon nitride on the substrate; and subsequently, modifying the silicon nitride film by activating a hydrogen gas and an ammonia gas and supplying the activated hydrogen gas and the activated ammonia gas to the substrate.Type: GrantFiled: November 17, 2017Date of Patent: January 26, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Noriaki Fukiage, Kentaro Oshimo, Shimon Otsuki, Hideomi Hane, Jun Ogawa, Hiroaki Ikegawa
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Publication number: 20200294787Abstract: A method for forming a silicon nitride film to cover a stepped portion formed by exposed surfaces of first and second base films in a substrate, includes: forming a nitride film or a seed layer to cover the stepped portion, wherein the nitride film is formed by supplying, to the substrate, a nitrogen-containing base-film nitriding gas for nitriding the base films, exposing the substrate to plasma and nitriding the surface of the stepped portion, and the seed layer is composed of a silicon-containing film formed by supplying a raw material gas of silicon to the substrate and is configured such that the silicon nitride film uniformly grows on the surfaces of the base films; and forming the silicon nitride film on the seed layer by supplying, to the substrate, a second raw material gas of silicon and a silicon-nitriding gas for nitriding silicon.Type: ApplicationFiled: June 2, 2020Publication date: September 17, 2020Inventors: Noriaki FUKIAGE, Takayuki KARAKAWA, Toyohiro KAMADA, Akihiro KURIBAYASHI, Takeshi OYAMA, Jun OGAWA, Kentaro OSHIMO, Shimon OTSUKI, Hideomi HANE
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Patent number: 10714332Abstract: A method for forming a silicon nitride film to cover a stepped portion formed by exposed surfaces of first and second base films in a substrate, includes: forming a nitride film or a seed layer to cover the stepped portion, wherein the nitride film is formed by supplying, to the substrate, a nitrogen-containing base-film nitriding gas for nitriding the base films, exposing the substrate to plasma and nitriding the surface of the stepped portion, and the seed layer is composed of a silicon-containing film formed by supplying a raw material gas of silicon to the substrate and is configured such that the silicon nitride film uniformly grows on the surfaces of the base films; and forming the silicon nitride film on the seed layer by supplying, to the substrate, a second raw material gas of silicon and a silicon-nitriding gas for nitriding silicon.Type: GrantFiled: March 15, 2017Date of Patent: July 14, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Noriaki Fukiage, Takayuki Karakawa, Toyohiro Kamada, Akihiro Kuribayashi, Takeshi Oyama, Jun Ogawa, Kentaro Oshimo, Shimon Otsuki, Hideomi Hane
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Patent number: 10626496Abstract: A film forming apparatus is provided for forming a film by revolving a substrate placed on a rotary table in a vacuum container, alternately supplying a precursor gas and a reaction gas that reacts with the precursor gas to generate a reaction product multiple times, and depositing the reaction product on the substrate. The film forming apparatus comprises a precursor gas supply region that supplies the precursor gas onto the substrate, one or more plasma generation regions that generate plasma at a position apart from the precursor gas supply region in a rotational direction of the rotary table, and a cleaning region that cleans the rotary table by supplying a cleaning gas onto the rotary table in a region apart from the plasma generation regions and the precursor gas supply region in the rotational direction when a film forming process is not performed on the substrate.Type: GrantFiled: June 6, 2018Date of Patent: April 21, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Takayuki Karakawa, Jun Ogawa, Noriaki Fukiage, Yasuo Kobayashi
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Patent number: 10573512Abstract: Disclosed is a method of forming a nitride film on a substrate to be processed (“processing target substrate”) having a carbon-containing film that contains a carbon atom. The method includes placing the processing target substrate within a processing container of a film forming apparatus, and forming a first nitride film on the carbon-containing film by plasma of a first reaction gas including a gas of nitride species having no hydrogen atom, and an inert gas.Type: GrantFiled: December 22, 2015Date of Patent: February 25, 2020Assignee: Tokyo Electron LimitedInventors: Takeshi Oyama, Noriaki Fukiage
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Patent number: 10438791Abstract: A film forming process of forming a silicon nitride film by depositing a molecular layer of silicon nitride on a surface of a substrate, in which an uneven pattern is formed and a base made of metal reacting with halogen is exposed, includes alternately performing adsorbing silicon halide to the surface of the substrate and nitriding the silicon halide, wherein the film forming process is performed under a condition in which the substrate is heated at a film-forming temperature, the film-forming temperature falling within a range of equal to or higher than a minimum film-forming temperature at which the molecular layer of the silicon nitride is formed by reaction of the silicon halide and a plasmarized nitriding gas and less than a maximum film-forming temperature at which the reaction of the base made of metal and the silicon halide goes ahead.Type: GrantFiled: June 11, 2018Date of Patent: October 8, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Hideomi Hane, Kentaro Oshimo, Shimon Otsuki, Jun Ogawa, Noriaki Fukiage, Hiroaki Ikegawa, Yasuo Kobayashi, Takeshi Oyama
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Publication number: 20190292662Abstract: A film-forming method includes: mounting a substrate on a mounting table in a vacuu container; adsorbing a raw material to the substrate by supplying raw material gas containing silicon into the vacuum container; nitriding the raw material by supplying nitriding gas to a plasma formation region inside the vacuum container and supplying plasmarized gas to the substrate; forming a silicon-containing nitride film on the substrate by alternately and repeatedly performing the adsorbing a raw material and the nitriding the raw material; setting stress of the silicon-containing nitride film before the adsorbing a raw material and nitriding the raw material; and adjusting a nitriding time having a length based on first correspondence relationship between the stress of the silicon-containing nitride film and parameter corresponding to the nitriding time in the plasma formation region, and the set stress of the silicon-containing nitride film.Type: ApplicationFiled: March 25, 2019Publication date: September 26, 2019Inventors: Hideomi HANE, Kentaro OSHIMO, Shimon OTSUKI, Jun OGAWA, Noriaki FUKIAGE, Hiroaki IKEGAWA, Yasuo KOBAYASHI, Takeshi OYAMA
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Publication number: 20190177845Abstract: A semiconductor process chamber is provided. The semiconductor process chamber includes a susceptor on which a plurality of wafers are disposed; a showerhead structure opposing the susceptor and disposed to be spaced apart from the susceptor; a plurality of plates opposing the susceptor and disposed to be spaced apart from the susceptor; and a blocking structure disposed between plates, among the plurality of plates, disposed adjacent to each other, wherein a distance between the showerhead structure and the susceptor is less than a distance between the plurality of plates and the susceptor, and a distance between the blocking structure and the susceptor is less than the distance between the plurality of plates and the susceptor.Type: ApplicationFiled: July 19, 2018Publication date: June 13, 2019Inventors: Seung Jae Baek, Hyun Namkoong, Tae Jong Lee, Sun Jung Kim, Ju Yeon Kim, Noriaki Fukiage, Masahide Iwasaki, Yuta Sorita
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Publication number: 20180366315Abstract: A film forming process of forming a silicon nitride film by depositing a molecular layer of silicon nitride on a surface of a substrate, in which an uneven pattern is formed and a base made of metal reacting with halogen is exposed, includes alternately performing adsorbing silicon halide to the surface of the substrate and nitriding the silicon halide, wherein the film forming process is performed under a condition in which the substrate is heated at a film-forming temperature, the film-forming temperature falling within a range of equal to or higher than a minimum film-forming temperature at which the molecular layer of the silicon nitride is formed by reaction of the silicon halide and a plasmarized nitriding gas and less than a maximum film-forming temperature at which the reaction of the base made of metal and the silicon halide goes ahead.Type: ApplicationFiled: June 11, 2018Publication date: December 20, 2018Inventors: Hideomi Hane, Kentaro Oshimo, Shimon Otsuki, Jun Ogawa, Noriaki Fukiage, Hiroaki Ikegawa, Yasuo Kobayashi, Takeshi Oyama