Abstract: In a bonded semiconductor member, microgaps are formed on a substrate side of a bonding interface to thereby constitute a gettering site, and heavy metal elements contaminated in the substrate are captured by the microgaps. The bonded semiconductor member is manufactured by interposing the microgaps between two substrates.

Abstract: In a bonded semiconductor member, microgaps are formed on a substrate side of a bonding interface to thereby constitute a gettering site, and heavy metal elements contaminated in the substrate are captured by the microgaps. The bonded semiconductor member is manufactured by interposing the microgaps between two substrates.

Abstract: An apparatus for measuring particles in a liquid, with the apparatus including an arrangement for allowing a sample liquid to flow out from a nozzle into a gas in a stream, an arrangement for radiating light into the sample liquid stream coaxially with the axis of the stream, and an arrangement for collecting ways of light scattered by particles contained in the sample liquid stream at a point outside and by a side of the sample liquid stream and then detecting the collective light rays.

Abstract: A carrier lifetime measuring apparatus according to the present invention has a construction wherein a first photon beam of a wavelength capable of rendering the optical absorption coefficient of a semiconductor sample very small when the semiconductor sample having a potential barrier in the vicinity of its surface is irradiated with the radiation, and a second photon beam of a wavelength capable of rendering the optical absorption coefficient very large are respectively chopped to alternately irradiate the identical place of the semiconductor sample with the chopped beams; first and second photovoltages which are generated in the semiconductor sample by these photon beams are detected by capacitance coupling; and the ratio between a first amplitude variation and a second amplitude variation is obtained from the amplitudes of the detected photovoltages; thereby to evaluate a minority carrier lifetime in the semiconductor sample.

Abstract: To nondestructively measure the carrier lifetime and cutoff frequency of a semiconductor wafer having a junction, the apparatus of this invention comprises means for radiating a pulsated photo beam whose frequency is changeable to the semiconductor wafer having a junction, means for taking out the resulting photovoltage by capacitance coupling and means for calculating the carrier lifetime and cutoff frequency from the chopping-frequency dependence characteristics of this photovoltage.

Abstract: In an optical system which is mounted on and used with an image pickup device for observing an object including a high brightness area therein, a pinhole is provided between the object and an imaging lens for separating the paths of the light rays from respective points of the object, and a filter which attenuates light from the high brightness area of the object which is separated by the pinhole.