Abstract: An optical element includes: a base; a multilayer film which is provided on the base and in which a plurality of unit laminate structures are laminated, each laminate structure having a first layer and a second layer provided on the first layer; and a plurality of spacer layers which are each provided at a different one of a plurality of interlaminar positions located between the unit laminate structures.

Abstract: A multilayer film reflector is a multilayer film reflector that includes a first uniform period multilayer film, an adjustment layer, and a second uniform period multilayer film in this order from a substrate side. A combination of the following (a) to (c) is set to each region or each position within a reflection surface. (a) Reflection characteristics of the single first uniform period multilayer film, (b) reflection characteristics of the single second uniform period multilayer film, and (c) a film thickness of the adjustment layer.

Abstract: A multilayer film reflector is a multilayer film reflector that includes a first uniform period multilayer film, an adjustment layer, and a second uniform period multilayer film in this order from a substrate side. A combination of the following (a) to (c) is set to each region or each position within a reflection surface. (a) Reflection characteristics of the single first uniform period multilayer film, (b) reflection characteristics of the single second uniform period multilayer film, and (c) a film thickness of the adjustment layer.

Abstract: An optical element includes: a base; a multilayer film which is provided on the base and in which a plurality of unit laminate structures are laminated, each laminate structure having a first layer and a second layer provided on the first layer; and a plurality of spacer layers which are each provided at a different one of a plurality of interlaminar positions located between the unit laminate structures.

Abstract: A multilayer mirror aims to reduce incidence angle dependence of reflectivity. A substrate is made of low thermal polished expansion glass with 0.2 nm RMS or less roughness of the surface. On the surface thereof formed is a Ru/Si multilayer having a wide full-width half maximum of peak reflectivity, and on the Ru/Si multilayer formed is a Mo/Si multilayer having a high peak reflectivity value. This enables higher reflectivity than when Ru/Si alone provided and a reflectivity peak having a wider full-width half maximum than when the Mo/Si multilayer alone provided. Since Ru absorbs EUV ray more than Mo does, higher reflectivity is obtainable than that of a structure having the Ru/Si multilayer formed on the Mo/Si multilayer. The multilayer with a wide full-width half maximum has small incidence angle dependence of reflectivity in spectral reflectivity, thereby achieving high imaging performance in projection optical system.

Abstract: A multilayer mirror aims to reduce incidence angle dependence of reflectivity. A substrate is made of low thermal polished expansion glass with 0.2 nm RMS or less roughness of the surface. On the surface thereof formed is a Ru/Si multilayer having a wide full-width half maximum of peak reflectivity, and on the Ru/Si multilayer formed is a Mo/Si multilayer having a high peak reflectivity value. This enables higher reflectivity than when Ru/Si alone provided and a reflectivity peak having a wider full-width half maximum than when the Mo/Si multilayer alone provided. Since Ru absorbs EUV ray more than Mo does, higher reflectivity is obtainable than that of a structure having the Ru/Si multilayer formed on the Mo/Si multilayer. The multilayer with a wide full-width half maximum has small incidence angle dependence of reflectivity in spectral reflectivity, thereby achieving high imaging performance in projection optical system.

Abstract: A multilayer mirror aims to reduce incidence angle dependence of reflectivity. A substrate is made of low thermal polished expansion glass with 0.2 nm RMS or less roughness of the surface. On the surface thereof formed is a Ru/Si multilayer having a wide full-width half maximum of peak reflectivity, and on the Ru/Si multilayer formed is a Mo/Si multilayer having a high peak reflectivity value. This enables higher reflectivity than when Ru/Si alone provided and a reflectivity peak having a wider full-width half maximum than when the Mo/Si multilayer alone provided. Since Ru absorbs EUV ray more than Mo does, higher reflectivity is obtainable than that of a structure having the Ru/Si multilayer formed on the Mo/Si multilayer. The multilayer with a wide full-width half maximum has small incidence angle dependence of reflectivity in spectral reflectivity, thereby achieving high imaging performance in projection optical system.

Abstract: A multilayer mirror aims to reduce incidence angle dependence of reflectivity. A substrate is made of low thermal polished expansion glass with 0.2 nm RMS or less roughness of the surface. On the surface thereof formed is a Ru/Si multilayer having a wide full-width half maximum of peak reflectivity, and on the Ru/Si multilayer formed is a Mo/Si multilayer having a high peak reflectivity value. This enables higher reflectivity than when Ru/Si alone provided and a reflectivity peak having a wider full-width half maximum than when the Mo/Si multilayer alone provided. Since Ru absorbs EUV ray more than Mo does, higher reflectivity is obtainable than that of a structure having the Ru/Si multilayer formed on the Mo/Si multilayer. The multilayer with a wide full-width half maximum has small incidence angle dependence of reflectivity in spectral reflectivity, thereby achieving high imaging performance in projection optical system.

Abstract: A multilayer mirror aims to reduce incidence angle dependence of reflectivity. A substrate is made of low thermal polished expansion glass with 0.2 nm RMS or less roughness of the surface. On the surface thereof formed is a Ru/Si multilayer having a wide full-width half maximum of peak reflectivity, and on the Ru/Si multilayer formed is a Mo/Si multilayer having a high peak reflectivity value. This enables higher reflectivity than when Ru/Si alone provided and a reflectivity peak having a wider full-width half maximum than when the Mo/Si multilayer alone provided. Since Ru absorbs EUV ray more than Mo does, higher reflectivity is obtainable than that of a structure having the Ru/Si multilayer formed on the Mo/Si multilayer. The multilayer with a wide full-width half maximum has small incidence angle dependence of reflectivity in spectral reflectivity, thereby achieving high imaging performance in projection optical system.

Abstract: Multilayer mirrors are disclosed for use especially in “Extreme Ultraviolet” (“soft X-ray,” or “EUV”) optical systems. Each multilayer mirror includes a stack of alternating layers of a first material and a second material, respectively, to form an EUV-reflective surface. The first material has a refractive index substantially the same as a vacuum, and the second material has a refractive index that differs sufficiently from the refractive index of the first material to render the mirror reflective to EUV radiation. The wavefront profile of EUV light reflected from the surface is corrected by removing (“machining” away) at least one surficial layer of the stack in selected region(s) of the surface of the stack. Machining can be performed such that machined regions have smooth tapered edges rather than abrupt edges. The stack can include first and second layer groups that allow the unit of machining to be very small, thereby improving the accuracy with which wavefront-aberration correction can be conducted.

Abstract: Methods are disclosed for manufacturing multi-layer film reflection mirrors, in which a desirable shape accuracy of a reflected wavefront can be obtained after locally scraping the multi-layer film. In an exemplary method, a multi-layer film (comprising respective alternating layers of at least two types of substances having different respective refractive indices) is superposedly formed on the surface of a mirror substrate. The multi-layer film has a constant period length, and the multi-layer film on the substrate is locally scraped to correct a phase of a reflected wavefront from the reflective surface of the mirror. The multi-layer film has an internal stress of 50 MPa or smaller. Alternatively or in addition, a compensating adjustment in a film formed on a reverse surface of the substrate can be made to cancel the stress perturbation caused by scraping of the multi-layer film on the obverse surface of the substrate.

Abstract: An extreme ultraviolet light generating device 1 arranged at the uppermost of an X-ray exposure apparatus is provided with a vacuum chamber 4, in which a central discharge electrode 2 and a peripheral discharge electrode 3 are arranged coaxially with each other. The central discharge electrode 2 is formed of tungsten, and a hollow portion 2a thereof is coated with a diamond thin film 10 having a thickness of 0.2 mm. In the hollow portion 2a, the distal end of a cooling water pipe 11 connected to a cooling water supplying device 12 is arranged. The temperature of the cooling water is always kept at about 20 degree C. and supplied to the hollow portion 2c of the central discharge electrode 2 through the cooling pipe 11. As the result, the temperature of the central discharge electrode 2 is quickly decreased resulting in preventing the rising of the temperature of the central discharge electrode 2, therefore to reduce the amount of the debris.

Abstract: A method for manufacturing a multi-layered film reflection mirror, in which a desirable shape precision of a reflective wave front can be obtained after locally scraping the multi-layered film, is provided. The method for manufacturing a multi-layered film reflection mirror according to the present invention, in which a multi-layered film which at least two types of substances having different refractive indices respectively are synchronously deposited with a constant periodic length is formed on a substrate, and the multi-layered film on the substrate is locally scraped in order to correct a phase of a reflective wave front in a reflective surface, wherein said multi-layered film has an internal stress of 50 MPa or smaller.

Abstract: A film forming method and apparatus are provided, in which, as shown in FIG. 4, a rotational symmetrical substrate 41 on which a film is formed is rotated along the rotational symmetry axis in a sufficiently vacuum container 40. And, a target material 42 in the container 40 is heated or irradiated ion beam to scatter atoms of the target material 42 and deposited the scattered atoms on the substrate 41. A film thickness regulating plate 10 which shields part of the scattered atoms is arranged near the substrate 41. The film thickness regulating plate 10 is composed a shape-constant regulating plate 11 as shown in FIG. 3 and a shape-variable regulating plate 21 as shown in FIG. 2.

Abstract: Sources are disclosed for producing short-wavelength electromagnetic radiation (EMR) such as extreme ultraviolet (“EUV” or “soft X-ray”) radiation useful in microlithography. The sources collect a greater amount of the EMR produced by a plasma than conventional sources and form the collected EMR into an illumination EMR flux having higher intensity than conventionally. The EMR flux desirably has a rotationally symmetrical intensity distribution. The plasma is produced by two electrodes contained in a vacuum chamber. A high-voltage pulsed power supply applies a plasma-creating potential across the electrodes. EMR produced by the plasma is collected, typically by a reflective element configured to form a collimated beam of EMR. The electrodes are configured and oriented such that, as the collimated beam passes by the electrodes, the electrodes exhibit minimal blocking of the EMR flux.

Abstract: Methods are disclosed for correcting the wave aberrations of light reflected from multilayer-film mirrors as used in, e.g., optical systems as used for EUV lithography (EUVL) apparatus. Wave aberrations are corrected by addition and/or removal of one or more layers (typically layer-sets) to and from, respectively, the surface of the multilayer film of the mirror. In certain embodiments, layer-removal is monitored in situ by any of several techniques. In other embodiments, mirror substrates are processed to a prescribed shape precision and surface roughness, followed by formation of the multilayer film and assembly of the mirrors into the intended optical assembly. The wave aberration is measured at operating wavelength. If the measured wave aberration is not within specifications, then the mirrors are corrected individually by selective removal and/or addition of layer-set(s). The corrected mirrors are reassembled and re-tested as an optical assembly. This cycle is repeated as required.

Abstract: The end of a nozzle of a laser-excited plasma light source is made of a specific material, such as silicon Si, the transmittance of which to EUV light is higher than those of heavy metals. Therefore, even if the temperature of the end of the nozzle is higher than the melting point of the specific material because of the high temperature of the plasma produced around the focal point, the end of the nozzle is therefore eroded, and sputtered particles of the material adhere to a light-collecting mirror provided near the nozzle, the degradation of the reflectance of the light-collecting mirror is mitigated compared to the transmittance of the sputtered particles (specific material) to EUV light is higher than those of heavy metals.

Abstract: Multilayer mirrors are disclosed for use especially in “Extreme Ultraviolet” (“soft X-ray,” or “EUV”) optical systems. Each multilayer mirror includes a stack of alternating layers of a first material and a second material, respectively, to form an EUV-reflective surface. The first material has a refractive index substantially the same as a vacuum, and the second material has a refractive index that differs sufficiently from the refractive index of the first material to render the mirror reflective to EUV radiation. The wavefront profile of EUV light reflected from the surface is corrected by removing (“machining” away) at least one surficial layer of the stack in selected region(s) of the surface of the stack. Machining can be performed such that machined regions have smooth tapered edges rather than abrupt edges.

Abstract: A x-ray apparatus includes an x-ray source, an x-ray optical system, wherein the x-ray optical system extracts x-rays of a specific wavelength from the x-ray source and converts the x-rays into a beam, and an irradiation source that causes radiation to be incident on surfaces of optical elements contained in the x-ray apparatus.

Abstract: A high-pressure krypton gas is supplied to the interior of a vessel from a gas introduction pipe. Light emitted from an optical fiber group formed by bundling together optical fibers constituting the output ends of fiber amplifiers or fiber lasers passes through a lens and exciting laser light introduction window, and is focused on the krypton gas jetting from the tip end of the nozzle. As a result, the krypton gas is excited as a plasma and soft X-rays are generated. The soft X-rays are reflected by a rotating multi-layer coat parabolic mirror and are emitted to the outside as a parallel beam of soft X-rays. Since light from fiber amplifiers is used as exciting light, and since numerous optical fibers are bundled together to form a light source, a large quantity of soft X-rays can easily be obtained.

Abstract: Disclosed herein is a composition comprising an isocyanate-reactive compound and a catalyst comprising a bismuth carboxylate and a zirconium carboxylate, wherein the catalyst is present in an amount sufficient to catalyze a reaction with the isocyanate-reactive compound and a polyisocyanate. Also disclosed is a process for preparing a composition, which comprises contacting an isocyanate-reactive compound with a polyisocyanate, in the presence of an effective amount of a catalyst comprising a bismuth carboxylate and a zirconium carboxylate, under reaction conditions sufficient to form a composition containing at least one urethane group.