Patents by Inventor Norihide Funato

Norihide Funato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method of manufacturing the same
    Patent number: 7364950
    Abstract: A semiconductor device is provided including a semiconductor element having a plurality of electrodes, a plurality of bonding portions of a lead frame, a plate-like current path material which electrically connects at least one of the plurality of electrodes and one of the plurality of bonding portions, a housing which packages the semiconductor element having the plurality of electrodes, the plurality of bonding portions of the lead frame, and the current path material, wherein the plate-like current path material is arranged to be directly bonded to one of the plurality of electrodes and one of the plurality of bonding portions, and the middle portion of the current path material is formed apart from the surface of the semiconductor element. A method of manufacturing the same is also provided.
    Type: Grant
    Filed: October 20, 2006
    Date of Patent: April 29, 2008
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Norihide Funato, Masataka Nanba, Hiroshi Sawano
  • Semiconductor device and method of manufacturing the same
    Patent number: 7230322
    Abstract: A semiconductor device is provided including a semiconductor element having a plurality of electrodes, a plurality of bonding portions of a lead frame, a plate-like current path material which electrically connects at least one of the plurality of electrodes and one of the plurality of bonding portions, a housing which packages the semiconductor element having the plurality of electrodes, the plurality of bonding portions of the lead frame, and the current path material, wherein the plate-like current path material is arranged to be directly bonded to one of the plurality of electrodes and one of the plurality of bonding portions, and the middle portion of the current path material is formed apart from the surface of the semiconductor element. A method of manufacturing the same is also provided.
    Type: Grant
    Filed: May 3, 2005
    Date of Patent: June 12, 2007
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Norihide Funato, Masataka Nanba, Hiroshi Sawano
  • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20070052075
    Abstract: A semiconductor device is provided including a semiconductor element having a plurality of electrodes, a plurality of bonding portions of a lead frame, a plate-like current path material which electrically connects at least one of the plurality of electrodes and one of the plurality of bonding portions, a housing which packages the semiconductor element having the plurality of electrodes, the plurality of bonding portions of the lead frame, and the current path material, wherein the plate-like current path material is arranged to be directly bonded to one of the plurality of electrodes and one of the plurality of bonding portions, and the middle portion of the current path material is formed apart from the surface of the semiconductor element. A method of manufacturing the same is also provided.
    Type: Application
    Filed: October 20, 2006
    Publication date: March 8, 2007
    Inventors: Norihide Funato, Masataka Nanba, Hiroshi Sawano
  • Semiconductor device and method of manufacturing the same
    Publication number: 20050212101
    Abstract: A semiconductor device is provided including a semiconductor element having a plurality of electrodes, a plurality of bonding portions of a lead frame, a plate-like current path material which electrically connects at least one of the plurality of electrodes and one of the plurality of bonding portions, a housing which packages the semiconductor element having the plurality of electrodes, the plurality of bonding portions of the lead frame, and the current path material, wherein the plate-like current path material is arranged to be directly bonded to one of the plurality of electrodes and one of the plurality of bonding portions, and the middle portion of the current path material is formed apart from the surface of the semiconductor element. A method of manufacturing the same is also provided.
    Type: Application
    Filed: May 3, 2005
    Publication date: September 29, 2005
    Inventors: Norihide Funato, Masataka Nanba, Hiroshi Sawano
  • Semiconductor device and method of manufacturing the same
    Patent number: 6903450
    Abstract: A semiconductor device is provided including a semiconductor element having a plurality of electrodes, a plurality of bonding portions of a lead frame, a plate-like current path material which electrically connects at least one of the plurality of electrodes and one of the plurality of bonding portions, a housing which packages the semiconductor element having the plurality of electrodes, the plurality of bonding portions of the lead frame, and the current path material, wherein the plate-like current path material is arranged to be directly bonded to one of the plurality of electrodes and one of the plurality of bonding portions, and the middle portion of the current path material is formed apart from the surface of the semiconductor element. A method of manufacturing the same is also provided.
    Type: Grant
    Filed: October 17, 2003
    Date of Patent: June 7, 2005
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Norihide Funato, Masataka Nanba, Hiroshi Sawano
  • Semiconductor device and method of manufacturing the same
    Publication number: 20040135237
    Abstract: A semiconductor device is provided including a semiconductor element having a plurality of electrodes, a plurality of bonding portions of a lead frame, a plate-like current path material which electrically connects at least one of the plurality of electrodes and one of the plurality of bonding portions, a housing which packages the semiconductor element having the plurality of electrodes, the plurality of bonding portions of the lead frame, and the current path material, wherein the plate-like current path material is arranged to be directly bonded to one of the plurality of electrodes and one of the plurality of bonding portions, and the middle portion of the current path material is formed apart from the surface of the semiconductor element. A method of manufacturing the same is also provided.
    Type: Application
    Filed: October 17, 2003
    Publication date: July 15, 2004
    Inventors: Norihide Funato, Masataka Nanba, Hiroshi Sawano