Abstract: In this junction element 1, when a forward voltage is applied, a depletion layer is formed in a semiconductor layer 2, prohibiting electrons present in an electrode layer 4 to move into the semiconductor layer 2. For this reason, a majority of holes in a semiconductor layer 3 do not disappear by recombination with conduction electrons in the semiconductor layer 2, but reach the electrode layer 4 while diffusing into the semiconductor layer 2. Accordingly, the junction element 1 can serve as a good conductor for holes, while avoiding the influence of a resistance value, and allows a current to flow therethrough at a level equal to or more than that achieved by a semiconductor element formed of a Si or SiC semiconductor.

Abstract: In this junction element 1, when a forward voltage is applied, a depletion layer is formed in a semiconductor layer 2, prohibiting electrons present in an electrode layer 4 to move into the semiconductor layer 2. For this reason, a majority of holes in a semiconductor layer 3 do not disappear by recombination with conduction electrons in the semiconductor layer 2, but reach the electrode layer 4 while diffusing into the semiconductor layer 2. Accordingly, the junction element 1 can serve as a good conductor for holes, while avoiding the influence of a resistance value, and allows a current to flow therethrough at a level equal to or more than that achieved by a semiconductor element formed of a Si or SiC semiconductor.

Abstract: A semiconductor manufacturing apparatus which performs a rapid heat treatment in which metallic thin films 11 and 12 to be metallic electrodes are formed on a top surface and a bottom surface of a silicon carbide semiconductor substrate 10, and thereafter, the silicon carbide semiconductor substrate 10 is heated. The semiconductor manufacturing apparatus is configured such that the silicon carbide semiconductor substrate 10 is held by a holding structure 20 by means of a contact with an exterior of a region formed with the metallic thin films 11 and 12 on the silicon carbide semiconductor substrate 10, and the held silicon carbide semiconductor substrate 10 is placed in an interior of a heating chamber of the semiconductor manufacturing apparatus.

Abstract: The disclosure relates to a photoconductive ignition system including a photoconductor configured to contact an oxidant-fuel gas mixture, and a light source providing irradiating light to a surface of the photoconductor. The photoconductor absorbs at least some of the light from the light source, which causes a variation in electrical potential at the surface of the photoconductor, thereby igniting the oxidant-fuel gas mixture. The disclosure further relates to a method of activating an oxidant-fuel gas mixture by exposing a photoconductor surface to the gas mixture and irradiating the surface with a light source emitting light at a wavelength corresponding to an energy level greater than a band gap energy level of the photoconductor, thereby activating the gas mixture in a combustion reaction.

Abstract: A fuel injection system of an internal combustion engine has an injector that injects fuel into an intake system or a combustion chamber of an internal combustion engine, and a pressurizing device that pressurizes the fuel to a predetermined pressure. Further, the system has a first heating device that heats the fuel on an upstream side of the injector, and a second heating device that further heats the fuel heated by the first heating device. The second heating device is provided in the injector. Furthermore, the system has a control device that controls the second heating device to heat up the fuel heated by the first heating device to a predetermined temperature.

Abstract: A method for manufacturing a SiC device embraces (a) depositing a polysilicon film above a SiC substrate; (b) delineating the polysilicon film into required pattern; and (c) annealing the SiC substrate in a water rich ambient to selectively grow a thick localized thermal oxide film above the SiC substrate. At the surface of SiC substrate, source/drain regions and substrate contact region are formed. In the water rich ambient, the H2O partial pressure is so maintained that it is more than 0.95.

Abstract: A method for manufacturing a SiC device embraces (a) depositing a polysilicon film above a SiC substrate; (b) delineating the polysilicon film into required pattern; and (c) annealing the SiC substrate in a water rich ambient to selectively grow a thick localized thermal oxide film above the SiC substrate. At the surface of SiC substrate, source/drain regions and substrate contact region are formed. In the water rich ambient, the H2O partial pressure is so maintained that it is more than 0.95.

Abstract: A method of forming a silicone resin film for protecting a semiconductor substrate on the substrate for a certain period of time and then removing the film from the substrate including the steps of: (a) forming the silicone resin film, on at least one portion of the substrate; (b) treating the film with an organic solvent, so that a majority of the film is dissolved in the organic solvent and thereby removed from the substrate and that a residue remains on the substrate; (c) oxidizing the residue to silicon oxide; and (d) treating the silicon oxide with an aqueous solution containing at least one of hydrogen fluoride and ammonium fluoride, so as to dissolve the silicon oxide in the solution and to thereby remove the silicon oxide from the substrate is described. The silicone resin film formed on the substrate can be easily completely removed, without damaging the electrical characteristics of the semiconductor.

Abstract: An etching process for a silicon semiconductor substrate to produce a semiconductor pressure sensor or a semiconductor acceleration sensor. The etching process comprises the following steps: (a) carrying out an etching of the semiconductor without application of a voltage to the semiconductor so as to accomplish a pre-etching step, the pre-etching step including dipping the semiconductor in hydrazine hydrate; and (b) carrying out an electrochemical etching of the semiconductor by applying pre-etching step so as to accomplish a final etching step, the final etching step including dipping the semiconductor in an alkali system etching solution containing at least hydrazine (N.sub.2 H.sub.4), potassium hydroxide (KOH), and water (H.sub.2 O), the alkali system etching solution containing potassium hydroxide in an amount of not less than 0.3% by weight.

Abstract: An electrochemical etching method for producing semiconductor diaphragms from a semiconductor wafer comprised of a first semiconductor layer of a first conductivity type and a second semiconductor layer formed on the first semiconductor layer, the second semiconductor layer having a second conductivity type different than the first semiconductor layer. The semiconductor wafer is placed in an etching solution with respect to a counter-electrode immersed in the etching solution. The semiconductor wafer has a plurality of chips each of which includes at least one third semiconductor layer of the first conductivity type. The third semiconductor layer extends through the second semiconductor layer to the first semiconductor layer. A first positive potential is applied to the first and third semiconductor layers with respect to the counter-electrode. A second positive potential is applied to the second semiconductor layer with respect to the first semiconductor layer.

Abstract: A semiconductor device includes a semiconductor substrate as a drain region. A metal source region is located on a first surface of the substrate. The metal and the substrate constitute a Schottky junction. An insulated gate, including a gate electrode and an insulating film surrounding the gate electrode, is adjacent to the Schottky junction, such that angle formed by the Schottky junction and the insulated gate in the substrate is an acute angle. A part of the Schottky metal can be buried in the form of a pillar in the substrate, and a channel region of the Schottky junction can be formed on the pillar near the insulated gate.