Abstract: A solid electrolyte has a composition represented by the formula: MgxMySiOz, where M represents at least one selected from the group consisting of Ti, Zr, Hf, Ca, Sr, and Ba; x satisfies 0<x<2; y satisfies 0<y<2; and z satisfies 3<z<6.

Abstract: A solid electrolyte has a composition represented by the formula: MgxSiOyNz, where 1<x<2, 3<y<5, and 0?z<1. The solid electrolyte is an amorphous material.

Abstract: An electricity storage device includes a first electrode, a second electrode, an electricity storage layer, and a p-type semiconductor layer. The electricity storage layer is placed between the first electrode and the second electrode. The electricity storage layer contains a mixture of an insulating material and n-type semiconductor particles. The p-type semiconductor layer is placed between the electricity storage layer and the second electrode. The n-type semiconductor particles contain at least one of a titanium-niobium composite oxide and a titanium-tantalum composite oxide.

Abstract: A charge storage device includes: a first electrode; a second electrode; a charge storage layer disposed between the first electrode and the second electrode; and an oxide layer disposed between the second electrode and the charge storage layer. The charge storage layer contains a mixture of semiconductor particles and insulator particles. An average particle size of the insulator particles is greater than or equal to the average particle size of the semiconductor particles.

Abstract: The present application discloses electric field measurement device for measuring electric field of a target. Electric field measurement device includes optical waveguide which transmits transmission light, electrode portion, which gives optical characteristics of optical waveguide periodic variation, antenna for setting first state, in which electric field is coupled to optical waveguide, and second state, in which electric field is disconnected from optical waveguide, detector which detects light intensity of emission light emitted from optical waveguide, and applicator which applies voltage to electrode portion to give periodic variation. Applicator includes setting portion, which sets reference voltage in correspondence to light intensity under the second state, and output portion, which outputs voltage in correspondence to difference between reference voltage and induced voltage happening to electrode portion under first state.

Abstract: An electrical storage device includes: a conductive anode collector; a conductive cathode collector; an anode between the anode collector and the cathode collector, the anode containing a mixture of an insulating material and an oxide of cerium; and a cathode between the cathode collector and the anode.

Abstract: An optical deflection element is provided with a substrate; an optical waveguide film made of an electro-optic medium, and constituting an optical waveguide formed on the substrate; a first electrode pair disposed on an incident side of the optical waveguide film at a position facing a film thickness direction of the optical waveguide film, and configured to deflect a light beam transmitting through the optical waveguide film in an in-plane direction of the optical waveguide film in accordance with a first applied voltage; and a second electrode pair disposed on an output side of the optical waveguide film at a position facing the film thickness direction of the optical waveguide film, and configured to deflect the light beam deflected in the in-plane direction of the optical waveguide film by the first electrode pair in the film thickness direction of the optical waveguide film in accordance with a second applied voltage. The second electrode pair includes a first electrode and a second electrode.

Abstract: An electricity storage device includes a first electrode, a second electrode, an electricity storage layer, and a p-type semiconductor layer. The electricity storage layer is placed between the first electrode and the second electrode. The electricity storage layer contains a mixture of an insulating material and n-type semiconductor particles. The p-type semiconductor layer is placed between the electricity storage layer and the second electrode. The n-type semiconductor particles contain at least one of a titanium-niobium composite oxide and a titanium-tantalum composite oxide.

Abstract: An electrical storage device includes a stack structure including a conductive first electrode layer, a conductive second electrode layer, a charging layer disposed between the first electrode layer and the second electrode layer, the charging layer including a mixture containing an insulating material and at least one metal oxide selected from the group consisting of niobium oxide, tantalum oxide and molybdenum oxide, and an electron barrier layer disposed between the charging layer and the second electrode layer.

Abstract: The present application discloses electric field measurement device for measuring electric field of a target. Electric field measurement device includes optical waveguide which transmits transmission light, electrode portion, which gives optical characteristics of optical waveguide periodic variation, antenna for setting first state, in which electric field is coupled to optical waveguide, and second state, in which electric field is disconnected from optical waveguide, detector which detects light intensity of emission light emitted from optical waveguide, and applicator which applies voltage to electrode portion to give periodic variation. Applicator includes setting portion, which sets reference voltage in correspondence to light intensity under the second state, and output portion, which outputs voltage in correspondence to difference between reference voltage and induced voltage happening to electrode portion under first state.

Abstract: An optical deflection element is provided with a substrate; an optical waveguide film made of an electro-optic medium, and constituting an optical waveguide formed on the substrate; a first electrode pair disposed on an incident side of the optical waveguide film at a position facing a film thickness direction of the optical waveguide film, and configured to deflect a light beam transmitting through the optical waveguide film in an in-plane direction of the optical waveguide film in accordance with a first applied voltage; and a second electrode pair disposed on an output side of the optical waveguide film at a position facing the film thickness direction of the optical waveguide film, and configured to deflect the light beam deflected in the in-plane direction of the optical waveguide film by the first electrode pair in the film thickness direction of the optical waveguide film in accordance with a second applied voltage. The second electrode pair includes a first electrode and a second electrode.

Abstract: A recording medium (10) is provided with a left-handed material layer (1) having at least one of a permittivity and a permeability of a negative value, and having substantially periodically formed structures; and a recording layer (2) including island-shaped and substantially periodically arranged recording regions (22), and being laminated on the left-handed material layer (1). The structure period of the left-handed material layer (1) is equal to or is an integral multiple of the arrangement period of the recording regions (22) of the recording layer (2).

Abstract: A recording medium (10) is provided with a left-handed material layer (1) having at least one of a permittivity and a permeability of a negative value, and having substantially periodically formed structures; and a recording layer (2) including island-shaped and substantially periodically arranged recording regions (22), and being laminated on the left-handed material layer (1). The structure period of the left-handed material layer (1) is equal to or is an integral multiple of the arrangement period of the recording regions (22) of the recording layer (2).