Abstract: A microfluidic chip includes a substrate, a partition layer including a resin material and provided on the substrate to form a channel, and a cover layer provided on the surface of the partition layer facing away from the substrate, where the partition layer has an elastic modulus in the range of 1 MPa or more and 10 GPa or less.

Abstract: There is provided a reflective photomask blank and a reflective photomask having good irradiation resistance and capable of obtaining good transfer performance. A reflective photomask blank (10) contains a reflective layer (2) reflecting incident light and an absorption layer (4) absorbing incident light, which are formed in this order on one surface side of a substrate (1). The absorption layer (4) contains a first material selected from the group consisting of tin, indium, and tellurium and a second material containing one or two or more kinds of materials selected from the group consisting of transition metals, bismuth (Bi), and silicon (Si) at least in the outermost layer. The content of the second material is more than 20 at and less than 50 at % in the same laver.

Abstract: There are provided a reflective photomask blank and a reflective photomask, which are compatibly capable of suppressing a shadowing effect and improving the life of a mask. A reflective photomask blank (10) includes a substrate (1), a reflection part (7) provided on the substrate (1) and configured to reflect incident light, and a low reflection part (8) provided on the reflection part (7) and configured to absorb incident light. The low reflection part (8) has a multi layer structure of at least two layers or more layers. An outermost layer (5) of the low reflection part (8) has a refractive index n equal to or more than 0.90 and an extinction coefficient k equal to or less than 0.02 with respect to extreme ultraviolet (EUV) light (where a wavelength is 13.5 nm).

Abstract: A reflective photomask blank (10) of a first aspect includes a substrate (1); a reflective layer (2) formed on the substrate (1); and a light absorbing layer (4) formed on the reflective layer (2). The light absorbing layer (4) includes a tin oxide film with an atomic ratio (O/Sn) of oxygen (O) to tin (Sn) being more than 1.50 and equal to or less than 2.0, and with a film thickness of 25 nm or more and 45 nm or less. Consequently, the shadowing effect of a reflective photomask for pattern transfer using extreme ultraviolet light as a light source is suppressed or reduced to improve the performance of transfer to a semiconductor substrate, and further, the cleaning resistance of the light absorbing layer is improved.

Abstract: There is provided a reflective photomask blank and a reflective photomask having good irradiation resistance and capable of obtaining good transfer performance. A reflective photomask blank (10) contains a reflective layer (2) reflecting incident light and an absorption layer (4) absorbing incident light, which are formed in this order on one surface side of a substrate (1). The absorption layer (4) contains a first material selected from the group consisting of tin, indium, and tellurium and a second material containing one or two or more kinds of materials selected from the group consisting of transition metals, bismuth (Bi), and silicon (Si) at least in the outermost layer. The content of the second material is more than 20 at and less than 50 at % in the same laver.

Abstract: A reflective photomask blank (10) of a first aspect includes a substrate (1); a reflective layer (2) formed on the substrate (1); and a light absorbing layer (4) formed on the reflective layer (2) and including a tin oxide film with a film thickness of 17 nm or more and less than 25.0 nm. Consequently, the shadowing effect of a reflective photomask for pattern transfer using extreme ultraviolet light as a light source is suppressed or reduced to improve the performance of transfer to a semiconductor substrate, and further, pattern collapse due to cleaning of the reflective photomask is suppressed.

Abstract: A reflective photomask blank (10) of a first aspect includes a substrate (1); a reflective layer (2) formed on the substrate (1); and a light absorbing layer (4) formed on the reflective layer (2) and including a tin oxide film with a film thickness of 17 nm or more and less than 25.0 nm. Consequently, the shadowing effect of a reflective photomask for pattern transfer using extreme ultraviolet light as a light source is suppressed or reduced to improve the performance of transfer to a semiconductor substrate, and further, pattern collapse due to cleaning of the reflective photomask is suppressed.

Abstract: A reflective photomask blank (10) of a first aspect includes a substrate (1); a reflective layer (2) formed on the substrate (1); and a light absorbing layer (4) formed on the reflective layer (2). The light absorbing layer (4) includes a tin oxide film with an atomic ratio (O/Sn) of oxygen (O) to tin (Sn) being more than 1.50 and equal to or less than 2.0, and with a film thickness of 25 nm or more and 45 nm or less. Consequently, the shadowing effect of a reflective photomask for pattern transfer using extreme ultraviolet light as a light source is suppressed or reduced to improve the performance of transfer to a semiconductor substrate, and further, the cleaning resistance of the light absorbing layer is improved.

Abstract: There are provided a reflective mask and a reflective mask blank reducing reflection of out-of-band light and a manufacturing method therefor. A light shielding frame is formed on a mask region corresponding to a multiply exposed boundary region between a chip and a semiconductor substrate. The frame is provided with an antireflective layer causing surface reflection in antiphase to out-of-band light reflected from the surfaces of a rear-surface conductive film and the substrate to provide a reflective mask reducing reflection of out-of-band light. The antireflective layer of the present disclosure has an electrical conductivity of 1×104/m? or greater to minimize charging occurring in a pattern region in observing the region using an electron microscope.

Abstract: A reflective photomask includes: a substrate; a multilayer reflection film formed on the substrate and reflecting exposure light including light with a wavelength of about 5 nm to 15 nm for lithography; an absorption film formed on the multilayer reflection film and absorbing the exposure light, and formed therein with a circuit pattern or a circuit pattern forming region where the circuit pattern is formed; a shading region formed by removing part of the multilayer reflection film and the absorption film on the substrate, on an outer peripheral side of the circuit pattern or the circuit pattern forming region to shade part of the exposure light reflected by the multilayer reflection film; and a plurality of projections formed at a pitch of about 3000 nm or less on part of a surface of the substrate exposed in the shading region, and suppressing reflection of out-of-band light with a wavelength of about 140 nm to 800 nm included in the exposure light and incident on the shading region.

Abstract: A reflective mask reducing reflection of out-of-band light. The reflective mask includes a light shielding frame formed in a mask region corresponding to a boundary region of a chip on a semiconductor substrate multiply exposed. The substrate of the light shielding frame includes a layer having a different refractive index or includes pores to change the path of incident out-of-band light to thereby suppress the out-of-band light from being reflected off the conductive film. The substrate also includes a layer having a different refractive index relative to out-of-band light reflected off the conductive layer. With the reflective mask of this configuration, influence on the wiring pattern dimension can be reduced and productivity of the semiconductors can be improved.

Abstract: There are provided a reflective mask and a reflective mask blank reducing reflection of out-of-band light and a manufacturing method therefor. A light shielding frame is formed on a mask region corresponding to a multiply exposed boundary region between a chip and a semiconductor substrate. The frame is provided with an antireflective layer causing surface reflection in antiphase to out-of-band light reflected from the surfaces of a rear-surface conductive film and the substrate to provide a reflective mask reducing reflection of out-of-band light. The antireflective layer of the present disclosure has an electrical conductivity of 1×104/m? or greater to minimize charging occurring in a pattern region in observing the region using an electron microscope.

Abstract: A reflective mask reducing reflection of out-of-band light. The reflective mask includes a light shielding frame formed in a mask region corresponding to a boundary region of a chip on a semiconductor substrate multiply exposed. The substrate of the light shielding frame includes a layer having a different refractive index or includes pores to change the path of incident out-of-band light to thereby suppress the out-of-band light from being reflected off the conductive film. The substrate also includes a layer having a different refractive index relative to out-of-band light reflected off the conductive layer. With the reflective mask of this configuration, influence on the wiring pattern dimension can be reduced and productivity of the semiconductors can be improved.

Abstract: A reflective mask blank, a reflective mask, and methods for manufacturing those, which suppress reflectance at a light-shielding frame. The reflective mask includes a substrate, a multilayered reflective layer formed on the substrate, an absorption layer formed on the multilayered reflective layer, and a frame-shaped light-shielding frame area at which the absorption layer has a film thickness larger than a film thickness at other areas. The multilayered reflective layer is diffused and mixed at the light-shielding frame area through melting.

Abstract: A reflective photomask includes: a substrate; a multilayer reflection film formed on the substrate and reflecting exposure light including light with a wavelength of about 5 nm to 15 nm for lithography; an absorption film formed on the multilayer reflection film and absorbing the exposure light, and formed therein with a circuit pattern or a circuit pattern forming region where the circuit pattern is formed; a shading region formed by removing part of the multilayer reflection film and the absorption film on the substrate, on an outer peripheral side of the circuit pattern or the circuit pattern forming region to shade part of the exposure light reflected by the multilayer reflection film; and a plurality of projections formed at a pitch of about 3000 nm or less on part of a surface of the substrate exposed in the shading region, and suppressing reflection of out-of-band light with a wavelength of about 140 nm to 800 nm included in the exposure light and incident on the shading region.

Abstract: A reflective mask having a light-shielding frame with high light-shielding performance, and a method for manufacturing thereof. In a reflective mask having a light-shielding frame dug into a multilayered reflective layer, when side etching is performed or processing to obtain a reverse tapered shape is performed only on the multilayered reflective layer, it becomes possible to suppress reflection of EUV light (extreme ultraviolet light) in the vicinity of the edge of the light-shielding frame, provide a reflective mask having high light-shielding ability, and form a transcription pattern with high accuracy.

Abstract: A reflective mask blank, a reflective mask, and methods for manufacturing those, which suppress reflectance at a light-shielding frame. The reflective mask includes a substrate, a multilayered reflective layer formed on the substrate, an absorption layer formed on the multilayered reflective layer, and a frame-shaped light-shielding frame area at which the absorption layer has a film thickness larger than a film thickness at other areas. The multilayered reflective layer is diffused and mixed at the light-shielding frame area through melting.

Abstract: A reflective mask having a light-shielding frame with high light-shielding performance, and a method for manufacturing thereof. In a reflective mask having a light-shielding frame dug into a multilayered reflective layer, when side etching is performed or processing to obtain a reverse tapered shape is performed only on the multilayered reflective layer, it becomes possible to suppress reflection of EUV light (extreme ultraviolet light) in the vicinity of the edge of the light-shielding frame, provide a reflective mask having high light-shielding ability, and form a transcription pattern with high accuracy.