Abstract: The present disclosure provides a novel light-emitting diode assembly comprising a housing and an LED package having sidewall electrodes. The housing comprises sidewalls with contacts that are in electrical connection with electrodes of the LED package. The electrodes of the LED package are substantially exposed along the sidewalls of a resin carrier layer of the LED package.

Abstract: The present disclosure provides a novel light-emitting diode package and corresponding fabrication method for making such a package. The novel LED package comprises a resin carrier layer having a first and second surface. Embedded in the resin carrier layer are at least one electrical conductor and at least one LED. The embedded LED comprises a substrate having a bottom surface that is substantially exposed at the second surface of the resin carrier layer. The embedded LED further comprises a light emitting layer that is substantially exposed at the first surface of the resin carrier layer.

Abstract: A method for singulating a semiconductor device dies from a wafer, and a singulated semiconductor device die is disclosed. In one embodiment, the method includes forming a plurality of recesses in a surface of the wafer along the edges of the semiconductor device dies to be singulated, each of the recesses having a tapered inner surface. The method further includes applying pressure to an opposite surface of the wafer along the edges of the semiconductor device dies, separating the edges of the semiconductor device dies from the wafer. In one embodiment, the recesses are formed by a pulsed laser. In one embodiment, the pressure is applied by a wafer breaking machine.

Abstract: A vertical GaN-based LED is made by growing an epitaxial LED structure on a silicon wafer. A silver layer is added and annealed to withstand >450° C. temperatures. A barrier layer (e.g., Ni/Ti) is provided that is effective for five minutes at >450° C. at preventing bond metal from diffusing into the silver. The resulting device wafer structure is then wafer bonded to a carrier wafer structure using a high temperature bond metal (e.g., AlGe) that melts at >380° C. After wafer bonding, the silicon is removed, gold-free electrodes (e.g., Al) are added, and the structure is singulated. High temperature solder (e.g., ZnAl) that is compatible with the electrode metal is used for die attach. Die attach occurs at >380° C. for ten seconds without melting the bond metal or otherwise damaging the device. The entire LED contains no gold, and consequently is manufacturable in a high-volume gold-free semiconductor fabrication facility.

Abstract: A method of manufacturing a light-emitting device using laser scribing to improve overall light output is disclosed. Upon placing a semiconductor wafer having light emitting diode (“LED”) devices separated by streets on a wafer chuck, the process arranges a first surface of semiconductor wafer containing front sides of the LED devices facing up and a second surface of semiconductor wafer containing back sides of the LED devices facing toward the wafer chuck. After aligning a laser device over the first surface of the semiconductor wafer above a street, the process is configured to focus a high intensity portion of a laser beam generated by the laser device at a location in a substrate closer to the back sides of the LED devices.

Abstract: A vertical GaN-based LED is made by growing an epitaxial LED structure on a silicon wafer. A silver layer is added and annealed to withstand >450° C. temperatures. A barrier layer (e.g., Ni/Ti) is provided that is effective for five minutes at >450° C. at preventing bond metal from diffusing into the silver. The resulting device wafer structure is then wafer bonded to a carrier wafer structure using a high temperature bond metal (e.g., AlGe) that melts at >380° C. After wafer bonding, the silicon is removed, gold-free electrodes (e.g., Al) are added, and the structure is singulated. High temperature solder (e.g., ZnAl) that is compatible with the electrode metal is used for die attach. Die attach occurs at >380° C. for ten seconds without melting the bond metal or otherwise damaging the device. The entire LED contains no gold, and consequently is manufacturable in a high-volume gold-free semiconductor fabrication facility.

Abstract: A method of manufacturing a light-emitting device using laser scribing to improve overall light output is disclosed. Upon placing a semiconductor wafer having light emitting diode (“LED”) devices separated by streets on a wafer chuck, the process arranges a first surface of semiconductor wafer containing front sides of the LED devices facing up and a second surface of semiconductor wafer containing back sides of the LED devices facing toward the wafer chuck. After aligning a laser device over the first surface of the semiconductor wafer above a street, the process is configured to focus a high intensity portion of a laser beam generated by the laser device at a location in a substrate closer to the back sides of the LED devices.

Abstract: A method of manufacturing a light-emitting device using laser scribing to improve overall light output is disclosed. Upon placing a semiconductor wafer having light emitting diode (“LED”) devices separated by streets on a wafer chuck, the process arranges a first surface of semiconductor wafer containing front sides of the LED devices facing up and a second surface of semiconductor wafer containing back sides of the LED devices facing toward the wafer chuck. After aligning a laser device over the first surface of the semiconductor wafer above a street, the process is configured to focus a high intensity portion of a laser beam generated by the laser device at a location in a substrate closer to the back sides of the LED devices.

Abstract: A method of manufacturing a light-emitting device using laser scribing to improve overall light output is disclosed. Upon placing a semiconductor wafer having light emitting diode (“LED”) devices separated by streets on a wafer chuck, the process arranges a first surface of semiconductor wafer containing front sides of the LED devices facing up and a second surface of semiconductor wafer containing back sides of the LED devices facing toward the wafer chuck. After aligning a laser device over the first surface of the semiconductor wafer above a street, the process is configured to focus a high intensity portion of a laser beam generated by the laser device at a location in a substrate closer to the back sides of the LED devices.