Patents by Inventor Noriko Ishiyama

Noriko Ishiyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • TI and W containing transparent oxide electrode film
    Patent number: 7575698
    Abstract: A transparent oxide electrode film is provided to have crystalline indium oxide as its main component in which the indium in the indium oxide is substituted with titanium at a titanium/indium atomic ratio between 0.003 and 0.120, and the resistivity of the transparent oxide electrode film is 5.7×10?4 ?cm or less, so as to provide excellent transmittance for both the visible light region and the infrared light region, and low resistivity.
    Type: Grant
    Filed: December 30, 2008
    Date of Patent: August 18, 2009
    Assignee: Sumitomo Metal Mining Co., Ltd.
    Inventors: Yoshiyuki Abe, Noriko Ishiyama
  • TRANSPARENT OXIDE ELECTRODE FILM AND MANUFACTURING METHOD THEREOF, TRANSPARENT ELECTRODONDUCTIVE BASE MATERIAL, SOLAR CELL AND PHOTO DETECTION ELEMENT
    Publication number: 20090127519
    Abstract: A transparent oxide electrode film is provided to have crystalline indium oxide as its main component in which the indium in the indium oxide is substituted with titanium at a titanium/indium atomic ratio between 0.003 and 0.120, and the resistivity of the transparent oxide electrode film is 5.7×10?4 ?cm or less, so as to provide excellent transmittance for both the visible light region and the infrared light region, and low resistivity.
    Type: Application
    Filed: December 30, 2008
    Publication date: May 21, 2009
    Applicant: SUMITOMO METAL MINING CO., LTD.
    Inventors: Yoshiyuki Abe, Noriko Ishiyama
  • Transparent oxide electrode film and manufacturing method thereof, transparent electroconductive base material, solar cell and photo detection element
    Patent number: 7507357
    Abstract: A transparent oxide electrode film is provided to have crystalline indium oxide as its main component, in which the indium in the indium oxide is substituted with titanium at a titanium/indium atomic ratio between 0.003 and 0.120, and the resitivity of the transparent oxide electrode film is 5.7×10?4 ?cm or less, so as to provide excellent transmittance for both the visible light region and the infrared light region, and low resistivity.
    Type: Grant
    Filed: October 2, 2003
    Date of Patent: March 24, 2009
    Assignee: Sumitomo Metal Mining Co., Ltd.
    Inventors: Yoshiyuki Abe, Noriko Ishiyama
  • Oxide sintered body and sputtering target, and manufacturing method for transparent conductive oxide film as electrode
    Patent number: 7347958
    Abstract: An oxide sintered body for sputtering target is provided wherein the main component is indium oxide, and it contains titanium such that the atomic ratio of Ti/In is 0.003 to 0.120, and the specific resistance is 1 k?m or less.
    Type: Grant
    Filed: November 14, 2006
    Date of Patent: March 25, 2008
    Assignee: Sumitomo Metal Mining Co., Ltd.
    Inventors: Yoshiyuki Abe, Noriko Ishiyama, Go Ohara
  • Oxide sintered body and sputtering target, and manufacturing method for transparent conductive oxide film as electrode
    Publication number: 20070057239
    Abstract: An oxide sintered body for sputtering target is provided wherein the main component is indium oxide, and it contains titanium such that the atomic ratio of Ti/In is 0.003 to 0.120, and the specific resistance is 1 k?m or less.
    Type: Application
    Filed: November 14, 2006
    Publication date: March 15, 2007
    Inventors: Yoshiyuki Abe, Noriko Ishiyama, Go Ohara
  • Oxide sintered body and sputtering target, and manufacturing method for transparent conductive oxide film as electrode
    Patent number: 7141186
    Abstract: An oxide sintered body for sputtering target is provided wherein the main component is indium oxide, and it contains titanium such that the atomic ratio of Ti/In is 0.003 to 0.120, and the specific resistance is 1 k.cm or less.
    Type: Grant
    Filed: October 28, 2003
    Date of Patent: November 28, 2006
    Assignee: Sumitomo Metal Mining Co., Ltd.
    Inventors: Yoshiyuki Abe, Noriko Ishiyama, Go Ohara
  • Oxide sintered body and sputtering target, and manufacturing method for transparent conductive oxide film as electrode
    Publication number: 20040164281
    Abstract: An oxide sintered body for sputtering target is provided wherein the main component is indium oxide, and it contains titanium such that the atomic ratio of Ti/In is 0.003 to 0.120, and the specific resistance is 1 k.cm or less.
    Type: Application
    Filed: October 28, 2003
    Publication date: August 26, 2004
    Inventors: Yoshiyuki Abe, Noriko Ishiyama, Go Ohara
  • Transparent oxide electrode film and manufacturing method thereof, transparent electroconductive base material, solar cell and photo detection element
    Publication number: 20040137280
    Abstract: A transparent oxide electrode film is provided to have crystalline indium oxide as its main component, in which the indium in the indium oxide is substituted with titanium at a titanium/indium atomic ratio between 0.003 and 0.120, and the resitivity of the transparent oxide electrode film is 5.7×10−4 &OHgr;cm or less, so as to provide excellent transmittance for both the visible light region and the infrared light region, and low resistivity.
    Type: Application
    Filed: October 2, 2003
    Publication date: July 15, 2004
    Inventors: Yoshiyuki Abe, Noriko Ishiyama