Abstract: According to one embodiment, a semiconductor device includes a substrate, a lower gate layer, a stacked body, a dummy electrode layer, an insulating film, and a channel body. The lower gate layer is provided above the substrate. The stacked body includes a plurality of insulating layers and a plurality of electrode layers alternately stacked above the lower gate layer. The dummy electrode layer is provided between the lower gate layer and the stacked body, made of the same material as the electrode layer, and thicker than each of the electrode layers. The insulating film includes a charge storage film provided on a side wall of a hole formed to penetrate through the stacked body and the dummy electrode layer. The channel body is provided on an inside of the insulating film in the hole.

Abstract: According to one embodiment, a semiconductor device manufacturing method comprises mounting a supporting substrate on a front surface side of a silicon substrate having an interconnection layer and function elements formed on a front surface side, polishing a back surface side of the silicon substrate, forming a mask having an opening and an opening for a dummy hole having a diameter smaller than that of the above opening on the back surface side of the silicon substrate, etching portions exposed to the openings of the mask from the back surface side of the silicon substrate to form a via hole that reaches a part of the interconnection layer and form a dummy hole to an intermediate portion of the silicon substrate, and forming an interconnection material in the via hole.

Abstract: According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can include multiply stacking an insulating layer and a conductive layer alternately above a base member. The insulating layer includes silicon oxide. The conductive layer includes silicon. In addition, the method can form a SiOC film on a stacked body of the insulating layers and the conductive layers, pattern the SiOC film, and make a hole in the stacked body by etching the insulating layers and the conductive layers using the patterned SiOC film as a mask.

Abstract: According to one embodiment, a semiconductor device includes a substrate, a lower gate layer, a stacked body, a dummy electrode layer, an insulating film, and a channel body. The lower gate layer is provided above the substrate. The stacked body includes a plurality of insulating layers and a plurality of electrode layers alternately stacked above the lower gate layer. The dummy electrode layer is provided between the lower gate layer and the stacked body, made of the same material as the electrode layer, and thicker than each of the electrode layers. The insulating film includes a charge storage film provided on a side wall of a hole formed to penetrate through the stacked body and the dummy electrode layer. The channel body is provided on an inside of the insulating film in the hole.

Abstract: According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can include multiply stacking an insulating layer and a conductive layer alternately above a base member. The insulating layer includes silicon oxide. The conductive layer includes silicon. In addition, the method can form a SiOC film on a stacked body of the insulating layers and the conductive layers, pattern the SiOC film, and make a hole in the stacked body by etching the insulating layers and the conductive layers using the patterned SiOC film as a mask.

Abstract: The present invention provides branched polyalkylene glycols useful as a chemically modifying agent for physiologically active polypeptides, wherein two single-chain polyalkylene glycols are linked to a group having a cyclic structure other than a plane structure, and wherein a group having reactivity with an amino acid side chain, an N-terminal amino group or a C-terminal carboxyl group in a polypeptide or a group convertible into the group having reactivity is linked to the group having a structure other than a plane structure.

Abstract: The present invention provides a branched polyalkylene glycol wherein three or more single-chain polyalkylene glycols and a group having reactivity with an amino acid side chain, the N-terminal amino group or the C-terminal carboxyl group in a polypeptide or a group convertible into the group having reactivity are bound; and a physiologically active polypeptide modified with the branched polyalkylene glycol.

Abstract: The present invention provides a branched polyalkylene glycol wherein three or more single-chain polyalkylene glycols and a group having reactivity with an amino acid side chain, the N-terminal amino group or the C-terminal carboxyl group in a polypeptide or a group convertible into the group having reactivity are bound; and a physiologically active polypeptide modified with the branched polyalkylene glycol.

Abstract: The present invention provides branched polyalkylene glycols useful as a chemically modifying agent for physiologically active polypeptides, wherein two single-chain polyalkylene glycols are linked to a group having a cyclic structure other than a plane structure, and wherein a group having reactivity with an amino acid side chain, an N-terminal amino group or a C-terminal carboxyl group in a polypeptide or a group convertible into the group having reactivity is linked to the group having a structure other than a plane structure.