Abstract: A solid-state imaging device includes a photodiode array having a plurality of pixels, each pixel including a second conductivity type region formed in a first conductivity type semiconductor layer, an electrode common to all the pixels and disposed on the first conductivity type semiconductor layer, a signal transfer part for transferring signal charges generated in the pixels and a DC voltage source for applying a DC voltage in a forward direction to the pixels. The reverse bias voltage applied to a photodiode due to the voltage applied by the signal input stage of the signal transfer part is canceled by the forward DC voltage applied to the common electrode. As a result, the operating points of the pixels are uniform when nearly zero bias voltage is applied to the pixels.

Abstract: A solid-state imaging device utilizing a charge skimming transfer system includes a sampling circuit for each of a plurality of pixels for detecting a quantity of signal charge light-electricity converted by the respective pixels and outputs a voltage level in accordance therewith, and a charge input section for performing skimming transfer of the signal charge light-electricity converted by the respective pixels using the output voltage of said sampling circuit as a skimming voltage thereof.