Abstract: A chip resistor includes an insulating substrate, a resistance element, and an electrode. The resistance element includes Cr, Si, and N and is disposed on the insulating substrate. The electrode includes at least one refractory metal and is disposed on the resistance element. An atomic ratio of Si to Cr in the resistance element is greater than or equal to ? and less than or equal to 4 at least at a center of the resistance element in a thickness direction defined with respect to the resistance element. An atom percentage of N in the resistance element is lower than or equal to 50 atom % at least at the center of the resistance element in the thickness direction.

Abstract: A laminated ceramic sintered body board for an electronic device includes a ceramic sintered body board and a flattening film that is provided on an upper surface of the ceramic sintered body board and contains a thermally conductive filler, and the flattening film contains a thermally conductive filler.

Abstract: A gas sensor device includes: a first electrode; a second electrode; a metal oxide layer that is disposed between the first electrode and the second electrode and is in contact with the first electrode and the second electrode; an interlayer insulating film that covers a part of the first electrode, a part of the second electrode, and a part of the metal oxide layer; and a hydrogen permeable film that allows only hydrogen to permeate, a local region that is in contact with the second electrode is provided inside the metal oxide layer, the local region having a higher oxygen deficiency than an oxygen deficiency of the other region in the metal oxide layer, an opening that exposes a gas contact portion which is a part of a main surface of the second electrode is provided in the interlayer insulating film, and the hydrogen permeable film is provided to cover at least the gas contact portion.

Abstract: The laminated alumina board for an electronic device includes an alumina board that is made of a sintered body of alumina particles and has an unevenness structure that is formed of the alumina particles on a surface and a flattening film that is provided on an upper surface of the alumina board and contains alumina as a main component.

Abstract: The laminated alumina board for an electronic device includes an alumina board that is made of a sintered body of alumina particles and has an unevenness structure that is formed of the alumina particles on a surface and a flattening film that is provided on an upper surface of the alumina board and contains alumina as a main component.

Abstract: A laminated ceramic sintered body board for an electronic device includes a ceramic sintered body board and a flattening film that is provided on an upper surface of the ceramic sintered body board and contains a thermally conductive filler, and the flattening film contains a thermally conductive filler.

Abstract: A sputtering device includes: a vacuum chamber in which a target material and a substrate are disposable in a manner of facing each other; a DC power supply being electrically connectable to the target material; a gas supply source configured to introduce a film forming gas containing a nitrogen gas into the vacuum chamber; and a pulsing unit configured to pulse a current flowing from the DC power supply to the target material. The sputtering device forms a nitride thin film having a ternary or more composition containing nitrogen on the substrate by generating plasma in the vacuum chamber using a sintered alloy target material having a binary or more composition as the target material.

Abstract: A gas sensor device includes: a first electrode; a second electrode; a metal oxide layer that is disposed between the first electrode and the second electrode and is in contact with the first electrode and the second electrode; an interlayer insulating film that covers a part of the first electrode, a part of the second electrode, and a part of the metal oxide layer; and a hydrogen permeable film that allows only hydrogen to permeate, a local region that is in contact with the second electrode is provided inside the metal oxide layer, the local region having a higher oxygen deficiency than an oxygen deficiency of the other region in the metal oxide layer, an opening that exposes a gas contact portion which is a part of a main surface of the second electrode is provided in the interlayer insulating film, and the hydrogen permeable film is provided to cover at least the gas contact portion.

Abstract: An ultraviolet light-emitting element includes: a multilayer stack in which an n-type AlGaN layer, a light-emitting layer, a first p-type AlGaN layer, and a second p-type AlGaN layer are arranged in this order; a negative electrode; and a positive electrode. The first p-type AlGaN layer has a larger Al composition ratio than first AlGaN layers serving as well layers. The second p-type AlGaN layer has a larger Al composition ratio than the first AlGaN layers. The first p-type AlGaN layer and the second p-type AlGaN layer both contain Mg. The second p-type AlGaN layer has a higher maximum Mg concentration than the first p-type AlGaN layer. The second p-type AlGaN layer includes a region where an Mg concentration increases in a thickness direction thereof as a distance from the first p-type AlGaN layer increases in the thickness direction.

Abstract: An epitaxial substrate includes: a single crystal substrate including projections arranged in an array on a plane. Each projection has a conical or pyramidal shape tapered in a normal direction to the plane. The AlN layer includes: a first AlN crystal covering the plane and the projections with tips of the projections being exposed; second AlN crystals protruding from the tips of the projections along the normal direction and each having a shape of a column whose cross-sectional area increases as a distance from a tip of a corresponding projection increases; and a third AlN crystal as a layer interconnecting ends of the second AlN crystals, opposite the single crystal substrate.

Abstract: A UV LED element, which is an exemplary ultraviolet light-emitting diode according to the present invention, includes an n-type conductive layer, a light-emitting layer, an electron block layer, and a p-type contact layer, all of which are arranged in this order. Bandgap energy of the electron block layer satisfies Econtact?EEBL, where Econtact designates bandgap energy of the p-type contact layer and EEBL designates the bandgap energy of the electron block layer. The electric apparatus includes the UV LED element as a light source for emitting an ultraviolet ray.

Abstract: An ultraviolet light-emitting element includes: a multilayer stack in which an n-type AlGaN layer, a light-emitting layer, a first p-type AlGaN layer, and a second p-type AlGaN layer are arranged in this order; a negative electrode; and a positive electrode. The first p-type AlGaN layer has a larger Al composition ratio than first AlGaN layers serving as well layers. The second p-type AlGaN layer has a larger Al composition ratio than the first AlGaN layers. The first p-type AlGaN layer and the second p-type AlGaN layer both contain Mg. The second p-type AlGaN layer has a higher maximum Mg concentration than the first p-type AlGaN layer. The second p-type AlGaN layer includes a region where an Mg concentration increases in a thickness direction thereof as a distance from the first p-type AlGaN layer increases in the thickness direction.

Abstract: An epitaxial substrate includes: a single crystal substrate including projections arranged in an array on a plane. Each projection has a conical or pyramidal shape tapered in a normal direction to the plane. The AlN layer includes: a first AlN crystal covering the plane and the projections with tips of the projections being exposed; second AlN crystals protruding from the tips of the projections along the normal direction and each having a shape of a column whose cross-sectional area increases as a distance from a tip of a corresponding projection increases; and a third AlN crystal as a layer interconnecting ends of the second AlN crystals, opposite the single crystal substrate.

Abstract: A UV LED element, which is an exemplary ultraviolet light-emitting diode according to the present invention, includes an n-type conductive layer, a light-emitting layer, an electron block layer, and a p-type contact layer, all of which are arranged in this order. Bandgap energy of the electron block layer satisfies Econtact?EEBL, where Econtact designates bandgap energy of the p-type contact layer and EEBL designates the bandgap energy of the electron block layer. The electric apparatus includes the UV LED element as a light source for emitting an ultraviolet ray.

Abstract: An ultraviolet light emitting element includes a light emitting layer, a cap layer, an electron barrier layer. The light emitting layer has a multi-quantum well structure including barrier layers each including a first AlGaN layer and well layers each including a second AlGaN layer. The electron barrier layer includes at least one first p-type AlGaN layer and at least one second p-type AlGaN layer. The cap layer is located between the first p-type AlGaN layer and one of the well layers closest to the first p-type AlGaN layer. The cap layer is a third AlGaN layer having an Al composition ratio greater than an Al composition ratio of each of the well layers and less than an Al composition ratio of the first p-type AlGaN layer. The cap layer has a thickness of greater than or equal to 1 nm and less than or equal to 7 nm.

Abstract: An ultraviolet light emitting element includes a light emitting layer, a cap layer, an electron barrier layer. The light emitting layer has a multi-quantum well structure including barrier layers each including a first AlGaN layer and well layers each including a second AlGaN layer. The electron barrier layer includes at least one first p-type AlGaN layer and at least one second p-type AlGaN layer. The cap layer is located between the first p-type AlGaN layer and one of the well layers closest to the first p-type AlGaN layer. The cap layer is a third AlGaN layer having an Al composition ratio greater than an Al composition ratio of each of the well layers and less than an Al composition ratio of the first p-type AlGaN layer. The cap layer has a thickness of greater than or equal to 1 nm and less than or equal to 7 nm.

Abstract: In a method of manufacture for a nitride semiconductor light emitting element including: a monocrystalline substrate; and an AlN layer; and a first nitride semiconductor layer of a first electrical conductivity type; and a light emitting layer made of an AlGaN-based material; and a second nitride semiconductor layer of a second electrical conductivity type, a step of forming the AlN layer includes: a first step of supplying an Al source gas and a N source gas into the reactor to generate a group of AlN crystal nuclei having Al-polarity to be a part of the AlN layer on the surface of the monocrystalline substrate; and a second step of supplying the Al source gas and the N source gas into the reactor to form the AlN layer, after the first step.

Abstract: An ultraviolet semiconductor light-emitting element comprises a light-emitting layer which is arranged between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, an n-electrode that is in contact with the n-type nitride semiconductor layer, and a p-electrode that is in contact with the p-type nitride semiconductor layer. The p-type nitride semiconductor layer is provided with a p-type contact layer that has a band gap smaller than that of the light-emitting layer and is in ohmic contact with the p-electrode. A depressed part is formed in a reverse side surface of a surface of the p-type nitride semiconductor layer that faces the light-emitting layer so as to avoid a formation region on which the p-electrode is formed. A reflective film that reflects ultraviolet light emitted from the light-emitting layer is formed on an inner bottom surface of the depressed part.

Abstract: In a method of manufacture for a nitride semiconductor light emitting element including: a monocrystalline substrate; and an AlN layer; and a first nitride semiconductor layer of a first electrical conductivity type; and a light emitting layer made of an AlGaN-based material; and a second nitride semiconductor layer of a second electrical conductivity type, a step of forming the AlN layer includes: a first step of supplying an Al source gas and a N source gas into the reactor to generate a group of MN crystal nuclei having Al-polarity to be a part of the AlN layer on the surface of the monocrystalline substrate; and a second step of supplying the Al source gas and the N source gas into the reactor to form the AlN layer, after the first step.

Abstract: An ultraviolet semiconductor light-emitting element comprises a light-emitting layer which is arranged between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, an n-electrode that is in contact with the n-type nitride semiconductor layer, and a p-electrode that is in contact with the p-type nitride semiconductor layer. The p-type nitride semiconductor layer is provided with a p-type contact layer that has a band gap smaller than that of the light-emitting layer and is in ohmic contact with the p-electrode. A depressed part is formed in a reverse side surface of a surface of the p-type nitride semiconductor layer that faces the light-emitting layer so as to avoid a formation region on which the p-electrode is formed. A reflective film that reflects ultraviolet light emitted from the light-emitting layer is formed on an inner bottom surface of the depressed part.